Patents by Inventor Tom Van Zutphen

Tom Van Zutphen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electron-optical device having separate elongate electron-emitting regions
    Patent number: 5864201
    Abstract: Electron-optical device having two elongate emitting regions arranged symmetrically with respect to a longitudinal axis for producing two electron beams having an elongate cross-section. By means of electron grids, the two beams are focused at the same point of an electron target arranged transversely to the longitudinal axis and having a short central axis and a long central axis. The elongate emitting regions have their smallest cross-section parallel to the scanning direction of a device, cooperating with the electron-optical device, for scanning a target arranged transversely to the longitudinal axis.
    Type: Grant
    Filed: September 4, 1996
    Date of Patent: January 26, 1999
    Assignee: U.S. Philips Corporation
    Inventors: Frederik C. Gehring, Tom Van Zutphen, Albert Manenschijn
  • Electron tube comprising a semiconductor cathode
    Patent number: 5850087
    Abstract: By providing a semiconductor device such as a cold cathode (7) with extra zener or avalanche structures (26, 27 and 32, 33, respectively) a robust structure is obtained which is resistant to damage during manufacture and use of a vacuum tube. The semiconductor zones (26, 27, 32, 33) are thus also utilized for realizing electron optics (particle optics).
    Type: Grant
    Filed: November 4, 1996
    Date of Patent: December 15, 1998
    Assignee: U.S. Philips Corporation
    Inventor: Tom Van Zutphen
  • Electron-optical device
    Patent number: 5831380
    Abstract: An electron has an electron-emitting region, a longitudinal axis and an arrangement of apertured electron grids along the axis. A first grid has an aperture for passing electrons, which aperture is located further outwards with respect to the longitudinal axis than the emitting region. One of the other grids is provided with a shield so as to shield the edge wall of the aperture, if it is located within direct view of the electron-emitting region, from incidence of positive ions.
    Type: Grant
    Filed: September 4, 1996
    Date of Patent: November 3, 1998
    Assignee: U.S. Philips Corporation
    Inventors: Tom Van Zutphen, Frederik C. Gehring
  • Electron tube comprising a semiconductor cathode
    Patent number: 5604355
    Abstract: By providing a semiconductor device such as a cold cathode (7) with extra zener or avalanche structures (26, 27 and 32, 33, respectively) a robust structure is obtained which is resistant to damage during manufacture and use of a vacuum tube. The semiconductor zones (26, 27, 32, 33) are thus also utilized for realizing electron optics (particle optics).
    Type: Grant
    Filed: May 16, 1995
    Date of Patent: February 18, 1997
    Assignee: U.S. Philips Corporation
    Inventor: Tom Van Zutphen
  • Electron tube comprising a semiconductor cathode
    Patent number: 5444328
    Abstract: By providing a semiconductor device such as a cold cathode (7) with extra zener or avalanche structure (26, 27 and 32, 33, respectively) a robust structure is obtained which is resistant damage from, e.g., flashoners, during manufacture and use in a vacuum tube. The semiconductor zones (24, 27, 32, 33) are also utilized as electron sources.
    Type: Grant
    Filed: November 12, 1993
    Date of Patent: August 22, 1995
    Assignee: U.S. Philips Corporation
    Inventor: Tom Van Zutphen