Patents by Inventor Tomas LEIJTENS
Tomas LEIJTENS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240121971Abstract: Solar cell modules and methods of fabrication are described. In an embodiment, a pair of tandem solar cells are bonded together along a contact ledge of a first tandem solar cell using a solid electrically conductive bonding material.Type: ApplicationFiled: August 30, 2023Publication date: April 11, 2024Inventors: Tomas Leijtens, Jiang Huang, In Cheon Baik
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Publication number: 20240065009Abstract: Solar cell stack-ups are described in which fullerene based transport layers are blended with a metal halide such as LiF, CsF or MgF2. In particular, perovskite solar cell stack-ups are described in which an electron transport layer includes a metal halide and fullerene blend.Type: ApplicationFiled: August 21, 2023Publication date: February 22, 2024Inventors: Tomas Leijtens, Giles Eperon, Rohit Prasanna, Annikki Santala
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Patent number: 11864399Abstract: Solar cell stack-ups are described in which fullerene based transport layers are blended with a metal halide such as LiF, CsF or MgF2. In particular, perovskite solar cell stack-ups are described in which an electron transport layer includes a metal halide and fullerene blend.Type: GrantFiled: August 22, 2022Date of Patent: January 2, 2024Assignee: Swift Solar Inc.Inventors: Tomas Leijtens, Giles Eperon, Rohit Prasanna, Annikki Santala
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Publication number: 20230120127Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.Type: ApplicationFiled: December 15, 2022Publication date: April 20, 2023Inventors: Axel Finn PALMSTROM, Tomas LEIJTENS, Joseph Jonathan BERRY, David Todd MOORE, Giles Edward EPERON
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Publication number: 20230080881Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.Type: ApplicationFiled: August 12, 2022Publication date: March 16, 2023Inventors: Axel Finn PALMSTROM, Tomas LEIJTENS, Joseph Jonathan BERRY, David Todd MOORE
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Patent number: 11462688Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.Type: GrantFiled: September 27, 2019Date of Patent: October 4, 2022Assignee: Alliance for Sustainable Energy, LLCInventors: Axel Finn Palmstrom, Tomas Leijtens, Joseph Jonathan Berry, David Todd Moore
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Patent number: 11387050Abstract: The present invention relates to an optoelectronic device comprising: (a) a substrate comprising at least one first electrode, which at least one first electrode comprises a first electrode material, and at least one second electrode, which at least one second electrode comprises a second electrode material; and (b) a photoactive material disposed on the substrate, which photoactive material is in contact with the at least one first electrode and the at least one second electrode, wherein the substrate comprises: a layer of the first electrode material; and, disposed on the layer of the first electrode material, a layer of an insulating material, which layer of an insulating material partially covers the layer of the first electrode material; and, disposed on the layer of the insulating material, the second electrode material, and wherein the photoactive material comprises a crystalline compound, which crystalline compound comprises: one or more first cations selected from metal or metalloid cations; one or mType: GrantFiled: October 5, 2016Date of Patent: July 12, 2022Assignee: OXFORD UNIVERSITY INNOVATION LIMITEDInventors: Henry James Snaith, Tomas Leijtens, Jack Alexander-Webber, Maximillian Tobias Hoerantner
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Patent number: 11312738Abstract: The present disclosure relates to a perovskite that includes ABX3, where A is an organic cation, B is a second cation, X is an anion, and the perovskite has a film density (?) of less than 4.37 g/cm3. In some embodiments of the present disclosure, the film density may be in the range, 4.1 g/cm3???4.37 g/cm3. In some embodiments of the present disclosure, the organic cation may include at least one of dimethylammonium (DMA), guanidinium (GA), and/or acetamidinium (Ac). In some embodiments of the present disclosure, A may further include cesium.Type: GrantFiled: November 8, 2019Date of Patent: April 26, 2022Assignee: Alliance for Sustainable Energy, LLCInventors: Tomas Leijtens, David Todd Moore, Giles Edward Eperon
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Publication number: 20220076948Abstract: Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film.Type: ApplicationFiled: January 15, 2021Publication date: March 10, 2022Inventors: Kevin Alexander Bush, Maximilian Tobias Hoerantner, Tomas Leijtens
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Patent number: 11158828Abstract: A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.Type: GrantFiled: December 12, 2019Date of Patent: October 26, 2021Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Kevin Alexander Bush, Colin David Bailie, Michael David McGehee, Tomas Leijtens
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Publication number: 20210143007Abstract: Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film.Type: ApplicationFiled: January 15, 2021Publication date: May 13, 2021Inventors: Kevin Alexander Bush, Maximilian Tobias Hoerantner, Tomas Leijtens
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Patent number: 10930494Abstract: Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film.Type: GrantFiled: April 7, 2020Date of Patent: February 23, 2021Assignee: SWIFT SOLAR INC.Inventors: Kevin Alexander Bush, Maximilian Tobias Hoerantner, Tomas Leijtens
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Publication number: 20200328077Abstract: Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film.Type: ApplicationFiled: April 7, 2020Publication date: October 15, 2020Inventors: Kevin Alexander Bush, Maximilian Tobias Hoerantner, Tomas Leijtens
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Publication number: 20200148711Abstract: The present disclosure relates to a perovskite that includes ABX3, where A is an organic cation, B is a second cation, X is an anion, and the perovskite has a film density (?) of less than 4.37 g/cm3. In some embodiments of the present disclosure, the film density may be in the range, 4.1 g/cm3???4.37 g/cm3. In some embodiments of the present disclosure, the organic cation may include at least one of dimethylammonium (DMA), guanidinium (GA), and/or acetamidinium (Ac). In some embodiments of the present disclosure, A may further include cesium.Type: ApplicationFiled: November 8, 2019Publication date: May 14, 2020Inventors: Tomas Leijtens, David Todd Moore, Giles Edward Eperon
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Publication number: 20200136072Abstract: A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.Type: ApplicationFiled: December 12, 2019Publication date: April 30, 2020Inventors: Kevin Alexander BUSH, Colin David BAILIE, Michael David MCGEHEE, Tomas LEIJTENS
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Publication number: 20200106019Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.Type: ApplicationFiled: September 27, 2019Publication date: April 2, 2020Inventors: Axel Finn Palmstrom, Tomas Leijtens, Joseph Jonathan Berry, David Todd Moore
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Patent number: 10522774Abstract: A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.Type: GrantFiled: October 21, 2016Date of Patent: December 31, 2019Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Kevin Alexander Bush, Colin David Bailie, Michael David McGehee, Tomas Leijtens
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Publication number: 20180309077Abstract: A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.Type: ApplicationFiled: October 21, 2016Publication date: October 25, 2018Inventors: Kevin Alexander BUSH, Colin David BAILIE, Michael David MCGEHEE, Tomas LEIJTENS
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Publication number: 20180286596Abstract: The present invention relates to an optoelectronic device comprising: (a) a substrate comprising at least one first electrode, which at least one first electrode comprises a first electrode material, and at least one second electrode, which at least one second electrode comprises a second electrode material; and (b) a photoactive material disposed on the substrate, which photoactive material is in contact with the at least one first electrode and the at least one second electrode, wherein the substrate comprises: a layer of the first electrode material; and, disposed on the layer of the first electrode material, a layer of an insulating material, which layer of an insulating material partially covers the layer of the first electrode material; and, disposed on the layer of the insulating material, the second electrode material, and wherein the photoactive material comprises a crystalline compound, which crystalline compound comprises: one or more first cations selected from metal or metalloid cations; one or mType: ApplicationFiled: October 5, 2016Publication date: October 4, 2018Inventors: HENRY JAMES SNAITH, TOMAS LEIJTENS, JACK ALEXANDER-WEBBER, MAXIMILLIAN TOBIAS HOERANTNER
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Patent number: 9929343Abstract: The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidized salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidized salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent.Type: GrantFiled: May 30, 2014Date of Patent: March 27, 2018Assignee: OXFORD UNIVERSITY INNOVATION LIMITEDInventors: Henry Snaith, Tomas Leijtens, Antonio Abate, Alan Sellinger