Patents by Inventor Tomihiro Amano
Tomihiro Amano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948778Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.Type: GrantFiled: July 14, 2021Date of Patent: April 2, 2024Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hidehiro Yanai, Shin Hiyama, Toru Kakuda, Toshiya Shimada, Tomihiro Amano
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Patent number: 11942333Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate to a first temperature while supporting the substrate on a substrate support, and supplying a process gas into a process vessel accommodating the substrate support; (b) lowering a temperature of a low temperature structure provided in the process vessel to a second temperature lower than the first temperature by supplying an inert gas or air to a coolant flow path provided in the process vessel after (a) for a predetermined time, wherein defects occur when a cleaning gas is supplied to the low temperature structure at the first temperature; and (c) cleaning the low temperature structure by supplying the cleaning gas into the process vessel after (b).Type: GrantFiled: January 4, 2023Date of Patent: March 26, 2024Assignee: Kokusai Electric CorporationInventor: Tomihiro Amano
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Publication number: 20240087937Abstract: According to the present disclosure, there is provided a technique capable of suppressing an erroneous detection of a presence or absence of a substrate caused by a light receiver receiving a specularly reflected light. There is provided a technique that includes: a holding structure provided with a placing surface capable of accommodating a substrate thereon; a light detector including: a light emitter arranged to irradiate an irradiation light toward a back surface of the substrate placed on the placing surface; and a light receiver arranged to be capable of receiving a diffusely reflected light of the irradiation light irradiated from the light emitter without receiving a specularly reflected light of the irradiation light; and a controller configured to be capable of determining a presence or absence of the substrate based on a light receiving state of the light receiver.Type: ApplicationFiled: August 14, 2023Publication date: March 14, 2024Applicant: Kokusai Electric CorporationInventors: Naoki Hara, Tomihiro Amano, Shin Hiyama
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Publication number: 20240047233Abstract: According to the present disclosure, there is provided a technique capable of improving a throughput and suppressing an oxidation of a surface of a substrate and an adhesion of particles to the surface of the substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a plurality of process chambers; a transfer chamber provided adjacent to the plurality of process chambers and maintained in a decompressed state; a waiting chamber capable of communicating with the transfer chamber in the decompressed state, provided with a plurality of supports capable of supporting a plurality of substrates after a process set for a first process chamber among the plurality of process chambers is completed, and configured such that an inert gas is supplied for every predetermined number of substrates among the plurality of substrates respectively supported by the plurality of supports.Type: ApplicationFiled: March 31, 2023Publication date: February 8, 2024Applicant: Kokusai Electric CorporationInventors: Naofumi OHASHI, Tomihiro Amano, Tomoyuki Miyada
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Publication number: 20230142890Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate to a first temperature while supporting the substrate on a substrate support, and supplying a process gas into a process vessel accommodating the substrate support; (b) lowering a temperature of a low temperature structure provided in the process vessel to a second temperature lower than the first temperature by supplying an inert gas or air to a coolant flow path provided in the process vessel after (a) for a predetermined time, wherein defects occur when a cleaning gas is supplied to the low temperature structure at the first temperature; and (c) cleaning the low temperature structure by supplying the cleaning gas into the process vessel after (b).Type: ApplicationFiled: January 4, 2023Publication date: May 11, 2023Inventor: Tomihiro AMANO
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Publication number: 20230060301Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate to a first temperature while supporting the substrate on a substrate support, and supplying a process gas into a process vessel accommodating the substrate support; (b) lowering a temperature of a low temperature structure provided in the process vessel to a second temperature lower than the first temperature by supplying an inert gas or air to a coolant flow path provided in the process vessel after (a) for a predetermined time, wherein defects occur when a cleaning gas is supplied to the low temperature structure at the first temperature; and (c) cleaning the low temperature structure by supplying the cleaning gas into the process vessel after (b)Type: ApplicationFiled: February 10, 2022Publication date: March 2, 2023Inventor: Tomihiro AMANO
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Patent number: 11574815Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate to a first temperature while supporting the substrate on a substrate support, and supplying a process gas into a process vessel accommodating the substrate support; (b) lowering a temperature of a low temperature structure provided in the process vessel to a second temperature lower than the first temperature by supplying an inert gas or air to a coolant flow path provided in the process vessel after (a) for a predetermined time, wherein defects occur when a cleaning gas is supplied to the low temperature structure at the first temperature; and (c) cleaning the low temperature structure by supplying the cleaning gas into the process vessel after (b).Type: GrantFiled: February 10, 2022Date of Patent: February 7, 2023Assignee: Kokusai Electric CorporationInventor: Tomihiro Amano
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Publication number: 20220090259Abstract: A substrate processing technique includes a substrate mounting table including a substrate mounting surface for a substrate; a process container for accommodating the substrate mounting table and forming a process chamber for processing the substrate mounted on the substrate mounting surface; at least one gas supplier for suppling a processing gas to the process chamber; a first wall arranged on an outer peripheral side of the at least one substrate mounting table; a second wall arranged at an outer side of the first wall on the outer peripheral side of the substrate mounting table; at least one exhaust flow path formed between the first wall and the second wall and configured to discharge a gas in the process chamber; and a shield plate arranged below the substrate mounting table and extending at least to a lower side of a lower end of the second wall.Type: ApplicationFiled: September 21, 2021Publication date: March 24, 2022Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Naofumi OHASHI, Tomihiro AMANO, Satoshi TAKANO
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Publication number: 20210343507Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.Type: ApplicationFiled: July 14, 2021Publication date: November 4, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Hidehiro YANAI, Shin HIYAMA, Toru KAKUDA, Toshiya SHIMADA, Tomihiro AMANO
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Patent number: 11101111Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.Type: GrantFiled: August 6, 2020Date of Patent: August 24, 2021Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hidehiro Yanai, Shin Hiyama, Toru Kakuda, Toshiya Shimada, Tomihiro Amano
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Publication number: 20200381221Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.Type: ApplicationFiled: August 6, 2020Publication date: December 3, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Hidehiro YANAI, Shin HIYAMA, Toru KAKUDA, Toshiya SHIMADA, Tomihiro AMANO
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Patent number: 10763084Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.Type: GrantFiled: January 17, 2018Date of Patent: September 1, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hidehiro Yanai, Shin Hiyama, Toru Kakuda, Toshiya Shimada, Tomihiro Amano
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Publication number: 20180144908Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low.Type: ApplicationFiled: January 17, 2018Publication date: May 24, 2018Applicant: HITACHI KOKUSAI ELECTRIC INCInventors: Hidehiro YANAI, Shin HIYAMA, Toru KAKUDA, Toshiya SHIMADA, Tomihiro AMANO
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Patent number: 9911580Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.Type: GrantFiled: November 29, 2011Date of Patent: March 6, 2018Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Hidehiro Yanai, Shin Hiyama, Toru Kakuda, Toshiya Shimada, Tomihiro Amano
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Patent number: 9082797Abstract: A substrate processing apparatus capable of increasing the life span of a lamp for heating a substrate is provided. The substrate processing apparatus includes: a light receiving chamber for processing a substrate; a substrate support unit inside the light receiving chamber; a lamp including an electrical wire, and a seal accommodating the electrical wire to hermetically seal the lamp with a gas therein, the lamp irradiating the substrate with a light; a lamp receiving unit outside the light receiving chamber to accommodate the lamp therein, the lamp receiving unit including a lamp connector connected to the lamp to supply an electric current through the electrical wire, a heat absorption member including a material having a thermal conductivity higher than that of the seal, and a base member fixing the heat absorption member; and an external electrical wire connected to the lamp connector to supply current to the lamp connector.Type: GrantFiled: June 28, 2012Date of Patent: July 14, 2015Assignee: Hitachi Kokusai Electric, Inc.Inventors: Yukinori Aburatani, Toshiya Shimada, Kenji Shinozaki, Tomihiro Amano, Hiroshi Ashihara, Hidehiro Yanai, Masahiro Miyake, Shin Hiyama
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Publication number: 20140235068Abstract: Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate having a silicon-containing film formed thereon into a process chamber; (b) supplying a gas into the process chamber from a gas supply unit until an inner pressure of the process chamber is equal to or greater than atmospheric pressure; and (c) supplying a process liquid from a process liquid supply unit to the substrate to oxidize the silicon-containing film.Type: ApplicationFiled: April 30, 2014Publication date: August 21, 2014Applicant: Hitachi Kokusai Electric Inc.Inventors: Hiroshi ASHIHARA, Tomihiro AMANO, Shin HIYAMA, Harunobu SAKUMA, Yuichi WADA, Hideto TATENO
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Publication number: 20130012035Abstract: A substrate processing apparatus capable of increasing the life span of a lamp for heating a substrate is provided. The substrate processing apparatus includes: a light receiving chamber for processing a substrate; a substrate support unit inside the light receiving chamber; a lamp including an electrical wire, and a seal accommodating the electrical wire to hermetically seal the lamp with a gas therein, the lamp irradiating the substrate with a light; a lamp receiving unit outside the light receiving chamber to accommodate the lamp therein, the lamp receiving unit including a lamp connector connected to the lamp to supply an electric current through the electrical wire, a heat absorption member including a material having a thermal conductivity higher than that of the seal, and a base member fixing the heat absorption member; and an external electrical wire connected to the lamp connector to supply current to the lamp connector.Type: ApplicationFiled: June 28, 2012Publication date: January 10, 2013Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yukinori Aburatani, Toshiya Shimada, Kenji Shinozaki, Tomihiro Amano, Hiroshi Ashihara, Hidehiro Yanai, Masahiro Miyake, Shin Hiyama
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Publication number: 20120329290Abstract: Provided is a substrate placement stage or substrate processing apparatus which can suppress thermal deformation of the substrate placement stage when the substrate placement stage on which a substrate is placed is heated in a process chamber. The substrate placement stage includes: a heating element; a first member surrounding the heating element; and a second member covering a surface of the first member and including a placing surface for placing a substrate thereon, wherein the first member is made of a first material containing ceramics and aluminum, and the second member is made of a second material containing ceramics and aluminum, a content of the ceramics in the second material being lower than that of the first material.Type: ApplicationFiled: May 24, 2012Publication date: December 27, 2012Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Toshiya Shimada, Kazuhiro Shimeno, Masakazu Sakata, Hidehiro Yanai, Tomihiro Amano, Yuichi Wada
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Publication number: 20120132228Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.Type: ApplicationFiled: November 29, 2011Publication date: May 31, 2012Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Hidehiro Yanai, Shin Hiyama, Toru Kakuda, Toshiya Shimada, Tomihiro Amano