Abstract: A substrate processing apparatus 100 includes a processing unit, a reservoir 31, a processing liquid pipe 32, a pump 34, a filter 35, a first flow rate section 36, a first return pipe 51, a first adjustment valve 52, a second return pipe 41, a branch supply pipe 16, a second flow rate section 42, and a controller. The first flow rate section 36 is placed in the processing liquid pipe 32 and measures a flow rate or pressure of the processing liquid flowing through the processing liquid pipe 32. The first adjustment valve 52 is placed in the first return pipe 51 and adjusts a flow rate of the processing liquid flowing through the first return pipe 51. The controller controls an opening degree of the first adjustment valve 52 based on the flow rate or the pressure of the processing liquid measured by the first flow rate section 36.

Abstract: A substrate processing apparatus includes a substrate holding unit which holds a substrate horizontally, a processing liquid supplying unit which has a processing liquid nozzle discharging a processing liquid and supplies the processing liquid to an upper surface of the substrate, and a moving unit which moves the processing liquid supplying unit between a process position at which the processing liquid nozzle faces the upper surface of the substrate and a retreat position at which the processing liquid nozzle retreats from positions at which the processing liquid nozzle faces the upper surface of the substrate, wherein the processing liquid supplying unit includes a first flow path which is formed in the processing liquid nozzle, the first flow path having one end part and the other end part that face acentralregion of the substrate and a peripheral region of the substrate, respectively, in a state where the processing liquid supplying unit is positioned at the process position, a second flow path which exte

Abstract: A substrate processing apparatus includes a substrate holder, a processing liquid supplying unit with a liquid nozzle discharging a processing liquid to an upper surface of the substrate. A moving unit moves the supplying unit between a process position at which the liquid nozzle faces the upper surface of the substrate and a retreat position. The supplying unit includes a first flow path in the processing liquid nozzle. The first flow path has one end part and the other end part that face a central region of the substrate and a peripheral region of the substrate, respectively, in a state where the supplying unit is positioned at the process position. It has a second flow path that supplies the processing liquid to the one end part, and a plurality of discharge ports in the processing liquid nozzle that are arranged along the first flow path direction and discharge the processing liquid in the first flow path to the substrate's upper surface.

Abstract: A substrate processing apparatus includes a processing liquid tank, a first circulation pipe, a filter, a pump, and a controller. The first circulation pipe has an upstream end connected to the processing liquid tank and a downstream end connected to the processing liquid tank. A processing liquid circulates in the first circulation pipe. The filter is deposed in the first circulation pipe and captures particles contained in the processing liquid. The pump is disposed in the first circulation pipe. The pump includes a rotor and feeds the processing liquid by rotating the rotor. In activation of the pump in a stopped state, the controller controls the pump so that the rotor rotates at a rotational acceleration of no greater than 400 rpm/sec.

Abstract: A substrate processing apparatus 100 includes a processing unit, a reservoir 31, a processing liquid pipe 32, a pump 34, a filter 35, a first flow rate section 36, a first return pipe 51, a first adjustment valve 52, a second return pipe 41, a branch supply pipe 16, a second flow rate section 42, and a controller. The first flow rate section 36 is placed in the processing liquid pipe 32 and measures a flow rate or pressure of the processing liquid flowing through the processing liquid pipe 32. The first adjustment valve 52 is placed in the first return pipe 51 and adjusts a flow rate of the processing liquid flowing through the first return pipe 51. The controller controls an opening degree of the first adjustment valve 52 based on the flow rate or the pressure of the processing liquid measured by the first flow rate section 36.

Abstract: A substrate processing apparatus includes a substrate holding unit which holds a substrate horizontally, a processing liquid supplying unit which has a processing liquid nozzle discharging a processing liquid and supplies the processing liquid to an upper surface of the substrate, and a moving unit which moves the processing liquid supplying unit between a process position at which the processing liquid nozzle faces the upper surface of the substrate and a retreat position at which the processing liquid nozzle retreats from positions at which the processing liquid nozzle faces the upper surface of the substrate, wherein the processing liquid supplying unit includes a first flow path which is formed in the processing liquid nozzle, the first flow path having one end part and the other end part that face a central region of the substrate and a peripheral region of the substrate, respectively, in a state where the processing liquid supplying unit is positioned at the process position, a second flow path which ex

Abstract: A substrate treating apparatus for drying substrates with a solvent vapor after treating the substrates with a treating liquid.

Abstract: A substrate treating apparatus for drying substrates with a solvent vapor after treating the substrates with a treating liquid, includes a solvent vapor supply device for supplying the solvent vapor into a treating chamber, an exhaust device for exhausting gas from the chamber through an exhaust pipe, a drain pipe connected to the chamber for draining the treating liquid from the chamber, a gas-liquid separator at the other end of the exhaust pipe for receiving the gas from the exhaust device, and connected to the other end of the drain pipe for receiving the treating liquid from the drain pipe, the gas-liquid separator separating the gas and the liquid, and a mixer mounted on the exhaust pipe for mixing deionized water into the gas exhausted by the exhaust device.

Abstract: A substrate treating apparatus for treating substrates with a treating liquid is disclosed. The apparatus includes a treating tank for storing the treating liquid, and treating the substrates as immersed in the treating liquid, a chamber surrounding the treating tank, a supply device for supplying an inert gas containing an organic solvent into the chamber, a lift mechanism vertically movable, while supporting the substrates, between a process position in the treating tank and a wait position above the treating tank and inside the chamber, a tank temperature control device for controlling temperature of the treating tank, a chamber temperature control device for controlling temperature of the chamber, and a control device for causing the tank temperature control device and the chamber temperature control device to perform heating treatment at least while the inert gas containing the organic solvent is supplied from the supply device.

Abstract: A substrate treating apparatus for drying substrates with a solvent vapor after treating the substrates with a treating liquid.

Abstract: A substrate treating apparatus for drying substrates by moving the substrates out of a treating liquid into a solvent atmosphere.

Abstract: A substrate treating apparatus for drying substrates by moving the substrates out of a treating liquid into a solvent atmosphere.

Abstract: A substrate treating apparatus for treating substrates with a treating liquid is disclosed. The apparatus includes a treating tank for storing the treating liquid, and treating the substrates as immersed in the treating liquid, a chamber surrounding the treating tank, a supply device for supplying an inert gas containing an organic solvent into the chamber, a lift mechanism vertically movable, while supporting the substrates, between a process position in the treating tank and a wait position above the treating tank and inside the chamber, a tank temperature control device for controlling temperature of the treating tank, a chamber temperature control device for controlling temperature of the chamber, and a control device for causing the tank temperature control device and the chamber temperature control device to perform heating treatment at least while the inert gas containing the organic solvent is supplied from the supply device.

Abstract: A substrate treating apparatus for treating substrates with a treating liquid is disclosed. The apparatus includes a treating tank for storing the treating liquid, and receiving the substrates for treatment with the treating liquid, a chamber surrounding the treating tank, a lift mechanism vertically movable, while supporting the substrates, between a process position inside the treating tank and a wait position above the treating tank and inside the chamber, an outlet for discharging the treating liquid from the treating tank, and a shutter mechanism for opening and closing an upper part of the treating tank. The shutter mechanism has a lower nozzle for supplying an inert gas containing an organic solvent toward an interior of the treating tank when the shutter mechanism is closed and the treating liquid has been discharged through the outlet.

Abstract: An inspection apparatus by which an increased number of semiconductor devices can be inspected simultaneously. The inspection apparatus includes a driver for outputting a signal to be used for inspection, a branching point to which the output terminal of the driver is connected, a current limiting element interposed between each of the terminals of the semiconductor devices to be inspected and the branching point, and a capacitor connected in parallel to each of the current limiting elements. A resistor or a thermistor, for example, is used for the current limiting element.

Abstract: An inspection apparatus by which an increased number of semiconductor devices can be inspected simultaneously. The inspection apparatus includes a driver for outputting a signal to be used for inspection, a branching point to which the output terminal of the driver is connected, a current limiting element interposed between each of the terminals of the semiconductor devices to be inspected and the branching point, and a capacitor connected in parallel to each of the current limiting elements. A resistor or a thermistor, for example, is used for the current limiting element.