Abstract: Solutions are disclosed for preventing the settling of an abrasive, while maintaining the polishing performance of a polishing composition. Solutions are disclosed for improving the redispersibility of an abrasive while maintaining the polishing performance. Polishing compositions for use in polishing a semiconductor substrate according to the present disclosure include an abrasive, a layered compound, and a dispersion medium.

Abstract: This interior member for a vehicle is configured by causing an upper trim and a lower trim, which are vertically divided in two parts, to abut each other, a concave section having a bottom surface portion that is planar and inclined downward on an inner side in a vehicle width direction is formed in at least a part of the lower trim, and a tag is clamped by the bottom surface portion of the concave section and the upper trim.

Abstract: The present invention provides a polishing composition for use in polishing a material having a Vickers hardness of 1500 Hv or higher. The polishing composition comprises an alumina abrasive and water. The alumina abrasive has an isoelectric point that is below 8.0 and is lower than the pH of the polishing composition.

Abstract: The present invention provides a solution for preventing the settling of an abrasive while maintaining the polishing performance. In addition, the present invention provides a solution for improving the redispersibility of an abrasive while maintaining the polishing performance. The present invention relates to a polishing composition for use in polishing a semiconductor substrate, the polishing composition containing an abrasive, a layered compound, and a dispersion medium.

Abstract: The present invention provides a solution for preventing the settling of an abrasive while maintaining the polishing performance. In addition, the present invention provides a solution for improving the redispersibility of an abrasive while maintaining the polishing performance. The present invention relates to a polishing composition for use in polishing a semiconductor substrate, the polishing composition containing an abrasive, a layered compound, and a dispersion medium.

Abstract: The present invention provides a polishing composition for use in polishing a material having a Vickers hardness of 1500 Hv or higher. The polishing composition comprises an alumina abrasive and water. The alumina abrasive has an isoelectric point that is below 8.0 and is lower than the pH of the polishing composition.

Abstract: Provided is a polishing composition containing an abrasive and water. The abrasive content in the polishing composition is no less than 0.1% by mass. The abrasive contains zirconium oxide particles. The zirconium oxide particles have a specific surface area of from 1 to 15 m2/g. The zirconium oxide particles preferably have a purity of no less than 99% by mass. The polishing composition is used in, for example, polishing a hard and brittle material, such as sapphire, silicon nitride, silicon carbide, silicon oxide, glass, gallium nitride, gallium arsenide, indium arsenide, and indium phosphide.

Abstract: A polishing composition for a substrate for a magnetic disk, which comprises: (a) a polishing accelerator composed of at least one compound selected from the group consisting of malic acid, glycolic acid, succinic acid, citric acid, maleic acid, itaconic acid, malonic acid, iminodiacetic acid, gluconic acid, lactic acid, mandelic acid, crotonic acid, nicotinic acid, aluminum nitrate, aluminum sulfate and iron(III) nitrate, (b) an edge sagging preventive agent composed of at least one compound selected from the group consisting of a polyvinylpyrrolidone, a polyoxyethylene sorbitan fatty acid ester and a polyoxyethylene sorbit fatty acid ester, (c) at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide and silicon carbide, and (d) water.

Abstract: A polishing composition for a substrate to be used for a memory hard disk, which comprises the following components (a) to (d): (a) water, (b) at least one compound selected from the group consisting of a polyoxyethylene polyoxypropylene alkyl ether and a polyoxyethylene polyoxypropylene copolymer, (c) at least one compound selected from the group consisting of nitric acid, nitrous acid, sulfuric acid, hydrochloric acid, molybdic acid, sulfamic acid, glycine, glyceric acid, mandelic acid, malonic acid, ascorbic acid, glutamic acid, glyoxylic acid, malic acid, glycolic acid, lactic acid, gluconic acid, succinic acid, tartaric acid, maleic acid and citric acid, and their salts, and (d) at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and silicon carbide.

Abstract: A polishing composition for a substrate for a magnetic disk, which comprises:

Abstract: A polishing composition for a substrate to be used for a memory hard disk, which comprises the following components (a) to (d):

Abstract: A polishing composition for magnetic disk substrates to be used for memory hard disks, which comprises: (a) water; (b) at least one phosphate. compound selected from the group consisting of a phosphate ester of ethoxylated alkylalcohol and a phosphate ester of ethoxylated arylalcohol; (c) at least one polishing accelerator selected from the group consisting of an inorganic acid and an organic acid, and their salts, other than the phosphate compound of component (b); (d) at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide.