Abstract: An infrared ray receiving element includes a substrate made of a pyroelectric material and having at least one cantilever portion surrounded by a slit, in which at least a part of the cantilever portion in the substrate is uniformly polarized in the same direction and the remainder in the substrate includes a portion polarized at random. At least a pair of electrodes are respectively provided on a top surface and a bottom surface of the cantilever portion.

Abstract: An infrared ray receiving element includes a substrate made of a pyroelectric material and having at least one cantilever portion surrounded by a slit, in which at least a part of the cantilever portion in the substrate is uniformly polarized in the same direction and the remainder in the substrate includes a portion polarized at random. At least a pair of electrodes are respectively provided on a top surface and a bottom surface of the cantilever portion.

Abstract: A pyroelectric-type IR receiving element comprises a pyroelectric substrate which is fixed to a supporting body at its support ends and at least one rectangular patch formed in the substrate. The patch is formed on its opposite surfaces with first and second electrodes which are overlapped to each other. The substrate has a U-shaped slit composed of a pair of side slits and a base slit connecting the side slits. The U-shaped slit surrounds continuously three sides of the patch, so that the patch is supported by the substrate in a cantilever fashion at a cantilever end which is opposed to one of the support ends of the substrate. Since a thermal stress applied to the substrate when the substrate is exposed to a temperature change is absorbed by the U-shaped slit, a stress concentration to be considered is not developed in the patch. As a result, it is possible to reduce the occurrence of popcorn noise, while maintaining good IR sensitivity.

Abstract: A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.