Abstract: To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor.

Abstract: A semiconductor device having a light detection function and including a high-resolution display portion is provided. The semiconductor device is a display apparatus including a light-emitting device, a light-receiving device, and a substrate. The light-emitting device includes a first electrode, a light-emitting layer, a first electron-transport layer, an electron-injection layer, and a second electrode stacked in this order over the substrate. The light-receiving device includes a third electrode, an active layer, a first hole-transport layer, the electron-injection layer, and the second electrode stacked in this order over the substrate. The first electrode is supplied with a first potential. The second electrode is preferably supplied with a second potential lower than the first potential. The third electrode is preferably supplied with a third potential higher than the second potential.

Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: An alloy prepared by reducing the sulfur content of ASTM UNS N06600 (Trademark Inconel Alloy 600) to an extremely small value and adding specified amounts of Nb and N, and an alloy prepared by reducing the oxygen content of Inconel Alloy 600 and adding specified amounts of Nb, N, B and Mg show a mechanical strength equivalent or superior to that of Inconel Alloy 600 and excellent hot workability, and further has intergranular corrosion resistance and integranular stress corrosion cracking resistance which are far more excellent than those of Inconel Alloy 600.