Abstract: A group III nitride semiconductor light emitting element includes an active layer between an n-type layer and a p-type layer, having an n-electrode on the n-type layer and a p-electrode on the p-type layer, and having a mesa structure containing the p-type layer. In a top view of the group III nitride semiconductor light emitting element, the distance between a portion of an end part of the mesa structure and the periphery of the p-electrode is ? or more of a diffusion length Ls.

Abstract: An n-type electrode includes a first electrode layer to be formed on an n-type group III nitride single crystal layer and a second electrode layer formed on the first electrode layer and in which at least the first electrode layer contains nitrogen atoms and oxygen atoms and an atomic ratio of the oxygen atoms to the nitrogen atoms is 0.2 or more and 2.0 or less.

Abstract: An electronic apparatus case including: a circuit board provided on a lower case, the circuit board having a plurality of signal lines in parallel, each specified area of the circuit board between each adjacent pair of the plurality of signal lines having a plurality of first through holes and a plurality of second through holes, the plurality of first and second through holes respectively being arranged in a first and a second lines at substantially equal interval of ? or less of a wavelength of signals propagating in the plurality of signal lines, the first line and the second line being arranged in parallel, each center of each of the plurality of first through holes and each center of each of the plurality of second through holes being shifted with a gap in a direction of the first line and the second line.

Abstract: A group III nitride semiconductor light emitting element comprising includes an active layer between an n-type layer and a p-type layer, having an n-electrode on the n-type layer and a p-electrode on the p-type layer, and having a mesa structure containing the p-type layer. In a top view of the group III nitride semiconductor light emitting element, the distance between a portion of an end part of the mesa structure and the periphery of the p-electrode is ? or more of a diffusion length Ls.

Abstract: An electronic apparatus case including: a circuit board provided on a lower case, the circuit board having a plurality of signal lines in parallel, each specified area of the circuit board between each adjacent pair of the plurality of signal lines having a plurality of first through holes and a plurality of second through holes, the plurality of first and second through holes respectively being arranged in a first and a second lines at substantially equal interval of 1/8 or less of a wavelength of signals propagating in the plurality of signal lines, the first line and the second line being arranged in parallel, each center of each of the plurality of first through holes and each center of each of the plurality of second through holes being shifted with a gap in a direction of the first line and the second line.

Abstract: In the vessel holder for an automobile-mounted console box, the wobble of a vessel ie: cup or the like caused by the vibration and the like of an automobile is particularly prevented. A console box 10 includes a box main body 20 and a lid 40. The box main body 20 has a hollow structure with its upper surface opened and the rid is openably and closably attached to the open upper surface of the box main body 20. The lid 40 includes a cup inserting hole 70 and a sliding door 90. The cup inserting hole 70 passes through the lid 40 in a vertical direction. The sliding door 90 is slidably held by sliding rails 80 disposed to the lid 40 and opens and closes the cup inserting hole 70. The sliding door 90 is slid so as to be abutted against the periphery of cups A B C inserted into the cup inserting hole 70 and holds them between it and the inner edge of the cup inserting hole 70 by adjusting the amount of opening of the cup inserting hole 70.