Abstract: A method of manufacturing a flexible device includes joining a first surface of a support substrate to a back surface of a flexible substrate, the first surface being opposite to a second surface of the support substrate; forming an element layer on a front surface of the flexible substrate; and performing multidirectional oblique irradiation of an interface and its vicinity between the support substrate and the flexible substrate with laser light from the second surface of the support substrate to detach the support substrate from the flexible substrate.

Abstract: Provided is an active matrix substrate that includes a substrate, a thin film transistor, an electrode layer, and a second insulating film. The thin film transistor is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes. The oxide semiconductor layer includes a first region as a channel region. The electrode layer is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end. The second insulating film is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer. The oxide semiconductor layer further includes a second region having lower resistance than the first region. The electrode layer is electrically coupled, at the first end, to the second region of the oxide semiconductor layer.

Abstract: A semiconductor device includes a substrate, a transistor, an electrically-conductive film, and a voltage applying section. The substrate includes a resin material and has a first surface and a second surface opposite to each other. The transistor is provided on the first surface of the substrate, and includes a semiconductor layer and paired source-drain electrodes. The source-drain electrodes are electrically coupled to the semiconductor layer, and are configured to receive a source potential and a drain potential, respectively. The electrically-conductive film is provided on the second surface of the substrate. The voltage applying section is configured to supply the electrically-conductive film with any of a potential equal to the source potential, a potential equal to the drain potential, and a potential between the source potential and the drain potential.

Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.

Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.

Abstract: A display unit includes a substrate, a first electrode, a second electrode, and an organic layer. The substrate is provided with a display region that includes a plurality of pixels. The substrate has a curved part and a planar part in the display region. The first electrode is provided over the substrate in the display region. The second electrode faces the first electrode and is provided in common for the plurality of pixels. The second electrode has one or more openings at a location that faces the curved part. The organic layer is provided between the first electrode and the second electrode.

Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.

Abstract: Provided is an active matrix substrate that includes a substrate, a thin film transistor, an electrode layer, and a second insulating film. The thin film transistor is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes. The oxide semiconductor layer includes a first region as a channel region. The electrode layer is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end. The second insulating film is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer. The oxide semiconductor layer further includes a second region having lower resistance than the first region. The electrode layer is electrically coupled, at the first end, to the second region of the oxide semiconductor layer.

Abstract: A method of manufacturing a flexible device includes joining a first surface of a support substrate to a back surface of a flexible substrate, the first surface being opposite to a second surface of the support substrate; forming an element layer on a front surface of the flexible substrate; and performing multidirectional oblique irradiation of an interface and its vicinity between the support substrate and the flexible substrate with laser light from the second surface of the support substrate to detach the support substrate from the flexible substrate.

Abstract: An electronic device includes a substrate, a barrier film, and one of an electrically-conductive layer and a semiconductor layer. The barrier film is provided on the substrate. The barrier film contains an inorganic polymer compound and an organic matter. One of the electrically-conductive layer and the semiconductor layer is provided on the substrate with the barrier film in between.

Abstract: A thin-film transistor includes a resin substrate and a thin-film transistor layer. The resin substrate has flexibility, and has volume resistivity of equal to or greater than 1×1017 ?·cm. The thin-film transistor layer is provided on the resin substrate.

Abstract: A system suppresses a variation in luminance for each pixel by appropriately suppressing a variation in the parasitic capacitance of a sampling transistor.

Abstract: A thin film transistor includes: a gate electrode and a pair of source-drain electrodes provided on a substrate; an oxide semiconductor layer provided between the gate electrode and the pair of source-drain electrodes, the oxide semiconductor layer forming a channel; a protection film provided over whole of a surface above the substrate; and a gate insulating film provided on a gate electrode side of the oxide semiconductor layer, the gate insulating film having end faces part or all of which are covered with the pair of source-drain electrodes or with the protection film.

Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.

Abstract: A display unit includes: an oxide semiconductor layer configured to form a channel; a first layer having electrical insulation or electrical conductivity; and a second layer including a hydrogen absorbent and disposed between the oxide semiconductor layer and the first layer.

Abstract: A display unit includes: an oxide semiconductor layer configured to form a channel; a first layer having electrical insulation or electrical conductivity; and a second layer including a hydrogen absorbent and disposed between the oxide semiconductor layer and the first layer.

Abstract: A system suppresses a variation in luminance for each pixel by appropriately suppressing a variation in the parasitic capacitance of a sampling transistor.

Abstract: A thin film transistor includes: a gate electrode and a pair of source-drain electrodes provided on a substrate; an oxide semiconductor layer provided between the gate electrode and the pair of source-drain electrodes, the oxide semiconductor layer forming a channel; a protection film provided over whole of a surface above the substrate; and a gate insulating film provided on a gate electrode side of the oxide semiconductor layer, the gate insulating film having end faces part or all of which are covered with the pair of source-drain electrodes or with the protection film.

Abstract: The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate (106) to a thin film device layer (103) provided on a protective layer (102) formed on a first substrate (101) through a first adhesive layer (105), then, completely or partly removing the first substrate (101) in accordance with a process including at least one process of a chemical process and a mechanical polishing process, bonding a third substrate (109) to the exposed protective layer (102) or the protective layer (102) covered with the partly removed first substrate (101) through a second adhesive layer (108) and separating or removing the second substrate (106). Thus, the thin film device suitable for a light and thin display panel is manufactured without deteriorating a ruggedness.

Abstract: A difference in brightness between a portion, at which fiber overlaps, and any other portion of a plastic substrate in which a fiber cloth is contained is eliminated by setting the axis of the fiber and the optical axis of a polarizing plate so as to be coaxial with each other. Thereby, a normal displaying can be effected.