Patents by Inventor Tomoharu Shimada
Tomoharu Shimada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8963051Abstract: A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction tube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.Type: GrantFiled: September 15, 2005Date of Patent: February 24, 2015Assignee: Hitachi Kokusai Electric Inc.Inventors: Tomoharu Shimada, Akira Morohashi, Kojiro Yokozawa, Keishin Yamazaki
-
Publication number: 20100148415Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.Type: ApplicationFiled: January 6, 2010Publication date: June 17, 2010Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Naoto Nakamura, Iwao Nakamura, Tomoharu Shimada, Kenichi Ishiguro, Sadao Nakashima
-
Patent number: 7667301Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.Type: GrantFiled: September 26, 2003Date of Patent: February 23, 2010Assignee: Hitachi Kokusai Electric Inc.Inventors: Naoto Nakamura, Iwao Nakamura, Tomoharu Shimada, Kenichi Ishiguro, Sadao Nakashima
-
Publication number: 20090186489Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.Type: ApplicationFiled: March 16, 2009Publication date: July 23, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Naoto Nakamura, Iwao Nakamura, Tomoharu Shimada, Kenichi Ishiguro, Sadao Nakashima
-
Publication number: 20080190910Abstract: A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction lube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.Type: ApplicationFiled: September 15, 2005Publication date: August 14, 2008Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tomoharu Shimada, Akira Morohashi, Kojiro Yokozawa, Keishin Yamazaki
-
Publication number: 20070275570Abstract: A heat treatment device where intervals between substrates supported by a supporter is reduced so that the number of substrates to be treated can be increased. A heat treatment device has a reaction furnace for treating substrates and a supporter for supporting the substrates in plural stages in the reaction furnace. The supporter has supporting plates in contact with the substrates and supporting members for supporting the supporting plates. A supporting plate and a supporting member are superposed on each other at least a part in the thickness direction.Type: ApplicationFiled: January 20, 2005Publication date: November 29, 2007Applicant: Hitachi Kokusai Electric Inc.Inventors: Naoto Nakamura, Iwao Nakamura, Tomoharu Shimada, Akira Morohashi, Keishin Yamazaki, Sadao Nakashima
-
Publication number: 20070194411Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.Type: ApplicationFiled: September 26, 2003Publication date: August 23, 2007Applicant: Hitachi Kokusai Electric Inc.Inventors: Naoto Nakamura, Iwao Nakamura, Tomoharu Shimada, Kenichi Ishiguro, Sadao Nakashima
-
Patent number: 7077913Abstract: A semiconductor fabricating apparatus having a structure, which facilitates a loading and unloading operation of wafers while having a low effect by a high temperature during a heat treatment. The semiconductor fabricating apparatus includes a plurality of ring-shaped holder having brims and recessed portions, the brims for mounting the to-be-processed wafers thereon, thereby performing the required heat treatment. A tweezer plate of a wafer loading-transferring device is inserted onto the recessed portion or taken out therefrom, and the inserted tweezer plate is ascended or descended, so that the wafer can be inserted on the brims or taken out therefrom.Type: GrantFiled: January 16, 2003Date of Patent: July 18, 2006Assignee: Hitachi Kokusai Electric, Inc.Inventor: Tomoharu Shimada
-
Publication number: 20030221623Abstract: An apparatus for fabricating a semiconductor device includes a reaction or process tube provided with at least one reinforcement member. The reinforcement member is attached to a body portion of the reaction tube and extends in a longitudinal direction of the reaction tube. A heater surrounds the reaction tube and a substrate loaded in the reaction tube is heat-treated by the heater.Type: ApplicationFiled: June 3, 2003Publication date: December 4, 2003Applicant: Hitachi Kokusai Electric Inc.Inventors: Nobuhito Shima, Tomoshi Taniyama, Shigeru Odake, Tomoharu Shimada
-
Publication number: 20030170583Abstract: A heat treatment apparatus for performing a heat treatment on one or more substrates includes a substrate support device holding the substrates, the substrate support device having a main body and a contact portion being in contact with a substrate. A surface of the main body is made of a material different from that of the contact portion, and at least a surface of the contact portion is made of either glassy carbon or graphite.Type: ApplicationFiled: February 27, 2003Publication date: September 11, 2003Applicant: Hitachi Kokusai Electric Inc.Inventors: Sadao Nakashima, Tomoharu Shimada, Kenichi Ishiguro
-
Publication number: 20030150386Abstract: A semiconductor fabricating apparatus having a structure, which facilitates a loading and unloading operation of wafers while having a low effect by a high temperature during a heat treatment. The semiconductor fabricating apparatus includes a plurality of ring-shaped holder having brims and recessed portions, the brims for mounting the to-be-processed wafers thereon, thereby performing the required heat treatment. A tweezer plate of a wafer loading-transferring device is inserted onto the recessed portion or taken out therefrom, and the inserted tweezer plate is ascended or descended, so that the wafer can be inserted on the brims or taken out therefrom.Type: ApplicationFiled: January 16, 2003Publication date: August 14, 2003Applicant: Hitachi Kokusai Electric, Inc.Inventor: Tomoharu Shimada
-
Patent number: 5636535Abstract: A new small sized tag cover for a compact disk to prevent shoplifting is developed. The shoplifting prevention tag is not easily damaged or removed from the compact disk housing case. Therefore, the compact disk is prevented from being stolen. The shoplifting prevention tag is recycled for subsequent use. The tag cover is comprised of a first connecting portion having a first engagement piece to be inserted into a first groove of a lid portion of the compact disk housing case. A second connecting portion having a second engagement piece is provided to be inserted into a second groove of the lid portion. A connecting portion is provided to retain the housing case in closed condition by clamping the housing case together with the first and second engagement pieces. A locking mechanism is provided to retain the lid portion in a closed condition.Type: GrantFiled: July 11, 1994Date of Patent: June 10, 1997Assignee: Soft Service Inc.Inventor: Tomoharu Shimada