Abstract: A slide door apparatus includes a body-side guide rail provided at a vehicle body, a door-side guide rail provided at a slide door, connection members each of which includes a guide roller rolling on a path formed by each of the guide rails, each of the connection members being connected to each of the guide rails, the slide door being configured to open and close a door opening portion formed at the vehicle body based on a movement of the slide door, one of the connection members being connected to the door-side guide rail and including a support arm which is rotatably connected to the vehicle body and at which the guide roller is provided, and a rotation restriction mechanism restricting the support arm from rotating at a position at which the support arm is positioned after rotating in association with an opening operation of the slide door.

Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.

Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.

Abstract: A slide door apparatus includes a body-side guide rail provided at a vehicle body, a door-side guide rail provided at a slide door, connection members each of which includes a guide roller rolling on a path formed by each of the guide rails, each of the connection members being connected to each of the guide rails, the slide door being configured to open and close a door opening portion formed at the vehicle body based on a movement of the slide door, facing portions formed at the slide door and the vehicle body respectively, the facing portions facing each other in a state where the slide door is in a fully open position, and a widthwise displacement restraint mechanism restricting a relative movement between the facing portions of the slide door and the vehicle body in a width direction of the vehicle by connecting the facing portions to each other.

Abstract: A slide structure that slides a door of a vehicle, including a roller hinge attached to the door; a guide roller that rolls within a rail of the door; a cable end that transmits a sliding force to the roller hinge to slide the door; and a guide roller pin that attaches the guide roller and the cable end to the roller hinge.

Abstract: A slide structure that slides a door of a vehicle, including a roller hinge attached to the door; a guide roller that rolls within a rail of the door; a cable end that transmits a sliding force to the roller hinge to slide the door; and a guide roller pin that attaches the guide roller and the cable end to the roller hinge.

Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.

Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.

Abstract: A slide door apparatus includes a body-side guide rail provided at a vehicle body, a door-side guide rail provided at a slide door, connection members each of which includes a guide roller rolling on a path formed by each of the guide rails, each of the connection members being connected to each of the guide rails, the slide door being configured to open and close a door opening portion formed at the vehicle body based on a movement of the slide door, facing portions formed at the slide door and the vehicle body respectively, the facing portions facing each other in a state where the slide door is in a fully open position, and a widthwise displacement restraint mechanism restricting a relative movement between the facing portions of the slide door and the vehicle body in a width direction of the vehicle by connecting the facing portions to each other.

Abstract: A slide door apparatus includes a body-side guide rail provided at a vehicle body, a door-side guide rail provided at a slide door, connection members each of which includes a guide roller rolling on a path formed by each of the guide rails, each of the connection members being connected to each of the guide rails, the slide door being configured to open and close a door opening portion formed at the vehicle body based on a movement of the slide door, one of the connection members being connected to the door-side guide rail and including a support arm which is rotatably connected to the vehicle body and at which the guide roller is provided, and a rotation restriction mechanism restricting the support arm from rotating at a position at which the support arm is positioned after rotating in association with an opening operation of the slide door.

Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes: (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.

Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.

Abstract: Provided is a slide door device for a vehicle, including: a body side lower rail disposed below a door opening formed on a side of a vehicle body and extends in a front-rear direction; a body side rail disposed above the body side lower rail and behind the door opening and extends in the front-rear direction; a door side lower guide roller unit and a door side guide roller unit connected to a slide door and configured to slide on the body side lower rail and the body side rail respectively; a door side lower rail disposed in a lower portion of the slide door positioned below the floor surface in the door opening and extends in the front-rear direction; and a body side lower guide roller unit connected to the lower portion of the door opening and configured to slide on the door side lower rail.

Abstract: A first processing gas containing a first element and a second processing gas containing a second element are alternately supplied to a surface of a substrate placed in a processing chamber, to thereby form a first thin film, and a second processing gas and a third processing containing the first element and different from the first processing gas are alternately supplied, to thereby form a second thin film on the first thin film, having the same element component as that of the first thin film.

Abstract: A cleaning control apparatus capable of performing a cleaning process efficiently regardless of qualities and thicknesses of films formed in a process tube and a gas supply nozzle. The cleaning control apparatus employs cleaning request signal output units configured to output cleaning request signals requesting cleaning processes of a silicon-containing gas supply system and nitriding source gas supply system when accumulated amounts of the molecules of the silicon-containing gas and the nitriding source gas exceeds preset values.

Abstract: A cleaning control apparatus capable of performing a cleaning process efficiently regardless of qualities and thicknesses of films formed in a process tube and a gas supply nozzle. The cleaning control apparatus employs cleaning request signal output units configured to output cleaning request signals requesting cleaning processes of a silicon-containing gas supply system and nitriding source gas supply system when accumulated amounts of the molecules of the silicon-containing gas and the nitriding source gas exceeds preset values.

Abstract: Efficient cleaning is possible although the film qualities and thicknesses of a reaction tube and a gas supply nozzle are different. There is provided a method of manufacturing a semiconductor device. The method includes forming a film on a substrate, performing a first cleaning process to remove a first deposition substance attached to an inner wall of a gas introducing part, and performing a second cleaning process to remove a second deposition substance attached to an inside of a process chamber and having a chemical composition different from that of the first deposition substance. In the first cleaning process, cleaning conditions are set according to the accumulated supply time of a first source gas supplied to the inside of the process chamber through the gas introducing part, and in the second cleaning process, cleaning conditions are set according to the accumulated thickness of a film formed on the substrate.

Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes: (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.

Abstract: A silicon nitride film including stoichiometrically excessive silicon with respect to nitrogen is formed. The silicon nitride film may be formed by supplying dichlorosilane to a substrate under a condition where CVD (chemical vapor deposition) reaction is caused to form a silicon film including several or less atomic layers on the substrate, supplying ammonia to the substrate in a non-plasma atmosphere to thermally nitride the silicon film under a condition where the nitriding reaction of the silicon film by the ammonia is not saturated, and alternately repeating the supplying of dichlorosilane and the supplying of ammonia.

Abstract: A first processing gas containing a first element and a second processing gas containing a second element are alternately supplied to a surface of a substrate placed in a processing chamber, to thereby form a first thin film, and a second processing gas and a third processing containing the first element and different from the first processing gas are alternately supplied, to thereby form a second thin film on the first thin film, having the same element component as that of the first thin film.