Patents by Inventor Tomohiro Kakizawa

Tomohiro Kakizawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8980529
    Abstract: A radiation-sensitive resin composition includes a polymer component, a radiation-sensitive acid generating agent, and a nitrogen-containing compound having a ring structure. The polymer component includes, in an identical polymer or different polymers, a first structural unit represented by a formula (1) and a second structural unit represented by a formula (2). R1 represents a hydrogen atom or a methyl group. Z is a group which represents a divalent monocyclic alicyclic hydrocarbon group taken together with R2. R2 represents a carbon atom. R3 represents a methyl group or an ethyl group. R4 represents a hydrogen atom or a methyl group. X is a group which represents a divalent bridged alicyclic hydrocarbon group having no less than 10 carbon atoms taken together with R5. R5 represents a carbon atom. R6 represents a branched alkyl group having 3 or 4 carbon atoms.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: March 17, 2015
    Assignee: JSR Corporation
    Inventors: Yasuhiko Matsuda, Norihiko Sugie, Tomohiro Kakizawa, Takakazu Kimoto
  • Publication number: 20140363773
    Abstract: A radiation-sensitive resin composition includes a resin including a repeating unit shown by a following general formula (1), a photoacid generator and a photodisintegrating base shown by a following general formula (8). R1 represents a hydrogen atom or a methyl group, and each of R2s individually represents a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof, a linear or branched alkyl group having 1 to 4 carbon atoms, or the like. Each of R18 to R20 individually represents a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group or a halogen atom, and Z? represents OH?, R—COO?, R—SO3? or an anion shown by a following formula (10), wherein R represents an alkyl group, an aryl group or an alkaryl group.
    Type: Application
    Filed: August 21, 2014
    Publication date: December 11, 2014
    Applicant: JSR Corporation
    Inventors: Atsushi Nakamura, Tsutomu Shimokawa, Junichi Takahashi, Takayoshi Abe, Tomoki Nagai, Tomohiro Kakizawa
  • Patent number: 8765355
    Abstract: A radiation sensitive resin composition includes a first polymer having a group represented by a following formula (1), and a radiation sensitive acid generator. n is an integer of 2 to 4. X represents a single bond or a bivalent organic group. A represents a (n+1) valent linking group. Each Q independently represents a group that includes an alkali-dissociable group.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: July 1, 2014
    Assignee: JSR Corporation
    Inventors: Takakazu Kimoto, Mitsuo Sato, Yusuke Asano, Tomohiro Kakizawa
  • Patent number: 8758978
    Abstract: A radiation-sensitive resin composition includes a first polymer, a second polymer and a radiation-sensitive acid generator. The first polymer includes a repeating unit (I) shown by the following general formula (1), a fluorine atom in a molecule of the first polymer. The second a polymer includes an acid-labile group, and is insoluble or scarcely soluble in an alkali. R1 represents a hydrogen atom or the like, each of X1 and R2 represents a single bond or the like, R3 represents a hydrogen atom or the like, and R4 represents an acid-labile group.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: June 24, 2014
    Assignee: JSR Corporation
    Inventors: Mitsuo Satou, Tomohiro Kakizawa
  • Publication number: 20120276482
    Abstract: A radiation sensitive resin composition includes a first polymer having a group represented by a following formula (1), and a radiation sensitive acid generator. n is an integer of 2 to 4. X represents a single bond or a bivalent organic group. A represents a (n+1) valent linking group. Each Q independently represents a group that includes an alkali-dissociable group.
    Type: Application
    Filed: April 27, 2012
    Publication date: November 1, 2012
    Applicant: JSR Corporation
    Inventors: Takakazu Kimoto, Mitsuo Sato, Yusuke Asano, Tomohiro Kakizawa
  • Publication number: 20120244478
    Abstract: A resist pattern formation method includes providing a first positive-tone radiation-sensitive resin composition on a substrate to form a first resist layer. The first resist layer is selectively exposed and developed to form a first resist pattern. The first resist pattern is coated with a resist pattern insolubilizing resin composition which comprises a resin and an alcohol solvent, the resin having a hydroxyl group. The resist pattern insolubilizing resin composition is baked or cured with UV to insolubilize the first resist pattern in a developer and in a second positive-tone radiation-sensitive resin composition. The resist pattern insolubilizing resin composition is developed to form an insolubilized resist pattern. The second positive-tone radiation-sensitive resin composition is provided on the insolubilized resist pattern to form a second resist layer. The second resist layer is selectively exposed and developed to form a second resist pattern.
    Type: Application
    Filed: June 6, 2012
    Publication date: September 27, 2012
    Applicant: JSR Corporation
    Inventors: Atsushi Nakamura, Tomoki Nagai, Takayoshi Abe, Tomohiro Kakizawa
  • Publication number: 20120171612
    Abstract: A radiation-sensitive resin composition includes a first polymer, a second polymer and a radiation-sensitive acid generator. The first polymer includes a repeating unit (I) shown by the following general formula (1), a fluorine atom in a molecule of the first polymer. The second a polymer includes an acid-labile group, and is insoluble or scarcely soluble in an alkali. R1 represents a hydrogen atom or the like, each of X1 and R2 represents a single bond or the like, R3 represents a hydrogen atom or the like, and R4 represents an acid-labile group.
    Type: Application
    Filed: March 12, 2012
    Publication date: July 5, 2012
    Applicant: JSR Corporation
    Inventors: Mitsuo SATOU, Tomohiro KAKIZAWA
  • Patent number: 8211624
    Abstract: A pattern forming method includes (1) selectively exposing a first resist layer, and developing the exposed first resist layer to form a first pattern, (2) applying a resin composition containing a hydroxyl group-containing resin and a solvent to the first pattern, baking the applied resin composition, and developing the baked resin composition to form a second pattern, the hydroxyl group-containing resin becoming insoluble or scarcely soluble in a developer when baked, and (3) totally or selectively exposing the second pattern to make the second pattern partly soluble in the developer, and developing the exposed second pattern to form a third pattern in which at least a hole or a groove is formed in the second pattern.
    Type: Grant
    Filed: May 21, 2008
    Date of Patent: July 3, 2012
    Assignee: JSR Corporation
    Inventors: Atsushi Nakamura, Tsutomu Shimokawa, Junichi Takahashi, Takayoshi Abe, Tomoki Nagai, Tomohiro Kakizawa
  • Publication number: 20120156621
    Abstract: A radiation-sensitive resin composition includes a resin including a repeating unit shown by a following general formula (1), a photoacid generator and a photodisintegrating base shown by a following general formula (8). R2 represents a hydrogen atom or a methyl group, and each of R2s individually represents a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof, a linear or branched alkyl group having 1 to 4 carbon atoms, or the like. Each of R18 to R20 individually represents a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group or a halogen atom, and Z? represents OH?, R—COO?, R—SO3? or an anion shown by a following formula (10), wherein R represents an alkyl group, an aryl group or an alkaryl group.
    Type: Application
    Filed: February 23, 2012
    Publication date: June 21, 2012
    Applicant: JSR Corporation
    Inventors: Atsushi NAKAMURA, Tsutomu Shimokawa, Junichi Takahashi, Takayoshi Abe, Tomoki Nagai, Tomohiro Kakizawa
  • Publication number: 20110223544
    Abstract: A resist pattern coating agent includes a hydroxyl group-containing resin and a solvent. The solvent includes an alcohol shown by a following formula (1) in an amount of about 30 mass % or more, R—OH??(1) wherein R represents a branched alkyl group having 3 to 10 carbon atoms. The resist pattern coating agent is used in a resist pattern-forming method. The method includes forming a first resist pattern on a substrate using a first radiation-sensitive resin composition. The first resist pattern is treated with the resist pattern coating agent. A second resist pattern is formed on the substrate treated with the resist pattern coating agent using a second radiation-sensitive resin composition.
    Type: Application
    Filed: April 19, 2011
    Publication date: September 15, 2011
    Applicant: JSR Corporation
    Inventors: Yuji YADA, Yusuke Anno, Tomohiro Kakizawa, Masafumi Hori, Michihiro Mita, Goji Wakamatsu
  • Publication number: 20110123936
    Abstract: A resist pattern coating agent includes a hydroxyl group-containing resin, a solvent, and at least two compounds including at least two groups shown by a following formula (1), compounds including a group shown by a following formula (2), and compounds including a group shown by a following formula (4).
    Type: Application
    Filed: February 7, 2011
    Publication date: May 26, 2011
    Applicant: JSR Corporation
    Inventors: Masafumi HORI, Michihiro Mita, Kouichi Fujiwara, Katsuhiko Hieda, Yoshikazu Yamaguchi, Tomohiro Kakizawa
  • Publication number: 20100323292
    Abstract: A resist pattern formation method includes (1) a step of forming a first resist pattern which includes forming a first resist layer on a substrate, selectively exposing the first resist layer to radiation through a mask, and developing the exposed first resist layer, (2) a step of insolubilizing the first resist pattern by coating the first resist pattern with a resist pattern insolubilizing resin composition, baking or curing with UV, and developing the resist pattern insolubilizing resin composition, (3) a step of forming a second resist layer on the insolubilized resist pattern and selectively exposing the second resist layer to radiation through a mask, and (4) a step of developing the exposed second resist layer to form a second resist pattern.
    Type: Application
    Filed: March 11, 2008
    Publication date: December 23, 2010
    Applicant: JSR Corporation
    Inventors: Atsushi Nakamura, Tomoki Nagai, Takayoshi Abe, Tomohiro Kakizawa
  • Publication number: 20100190104
    Abstract: A pattern forming method includes (1) selectively exposing a first resist layer, and developing the exposed first resist layer to form a first pattern, (2) applying a resin composition containing a hydroxyl group-containing resin and a solvent to the first pattern, baking the applied resin composition, and developing the baked resin composition to form a second pattern, the hydroxyl group-containing resin becoming insoluble or scarcely soluble in a developer when baked, and (3) totally or selectively exposing the second pattern to make the second pattern partly soluble in the developer, and developing the exposed second pattern to form a third pattern in which at least a hole or a groove is formed in the second pattern.
    Type: Application
    Filed: May 21, 2008
    Publication date: July 29, 2010
    Applicant: JSR Corporation
    Inventors: Atsushi Nakamura, Tsutomu Shimokawa, Junichi Takahashi, Takayoshi Abe, Tomoki Nagai, Tomohiro Kakizawa