Abstract: An electro-optical apparatus includes an electro-optical panel having a first end portion, a first connector that is flexible, and a reinforcement member on the first connector. The first connector has a second end portion and a third end portion opposite to the second end portion. The second end portion is connected to the first end portion. The first connector has a first surface connected to the electro-optical panel, and a second surface opposite to the first surface. The reinforcement member is located on the first surface, and extends from an end surface at the first end portion of the electro-optical panel to the third end portion. The first connector has first and second side edges, at least one of which has a first cutout depressed inward. The first and second side edges connect the second and third end portions to each other.

Abstract: A clad steel plate having tensile strength (TS) of 780 MPa or more, excellent bendability, collision resistance, and LME resistance. The clad steel plate having a base metal and a cladding metal on front and back surfaces of the base metal, and the chemical composition and microstructure of the base metal and the cladding metal being appropriately controlled so that the average Vickers hardness (HVL) of the cladding metal is 260 or less, the average Vickers hardness (HVL) of the cladding metal divided by the average Vickers hardness (HVB) of the base metal is 0.80 or less, the boundary roughness between the base metal and the cladding metal is 50 ?m or less at the maximum height Ry, and the number of voids at the boundary between the base metal and the cladding metal is controlled to 20 or fewer per 10 mm length of the boundary.

Abstract: A data processing system according to the present disclosure includes an acquisition unit and a production unit. The acquisition unit acquires on-site investigation data related to the space. The production unit changes, with respect to article data of the article to be placed in the space, at least one of a dimension, design, and a function on the basis of the on-site investigation data so as to achieve harmony with the space and produces article processing data for processing the article according to the article data after the change. The on-site investigation data includes space-related data related to the space. The production unit produces the article processing data on the basis of the space-related data.

Abstract: A reflectance measurement part measures the reflectance of a back surface of a semiconductor wafer. An imaging parameter of a camera is adjusted based on the measured reflectance. The imaging parameter includes exposure time and sensitivity of the camera. The camera with the adjusted imaging parameter images the back surface of the semiconductor wafer to determine the presence or absence of a flaw from the obtained image data. The camera is able to perform appropriate imaging in accordance with the reflectance of the back surface of the semiconductor wafer. Thus, a flaw in the back surface of the semiconductor wafer is detected with reliability even if the reflectance of the back surface is varied due to the deposition of a thin film on the back surface.

Abstract: Film information about a thin film formed on the front surface of a semiconductor wafer, substrate information about the semiconductor wafer, and an installation angle of an upper radiation thermometer are set and input. Emissivity of the front surface of the semiconductor wafer formed with a multilayer film is calculated based on the various kinds of information. Further, a weighted average efficiency of the emissivity of the front surface of the semiconductor wafer is determined based on a sensitivity distribution of the upper radiation thermometer. Front surface temperature of the semiconductor wafer at the time of heat treatment is measured using the determined weighted average efficiency of the emissivity. The emissivity is determined based on the film information and the like, so that the front surface temperature of the semiconductor wafer can be accurately measured even when thin films are formed in multiple layers.

Abstract: An abnormality detection device for detecting a treatment abnormality in a semiconductor wafer to be heat-treated in a heat treatment apparatus is provided. The abnormality detection device includes a lower radiation thermometer for measuring a temperature of the semiconductor wafer being heat-treated, a treatment information acquisition part (sensors) for acquiring a plurality of pieces of treatment information having a correlation with the temperature measured by the lower radiation thermometer, and a detection part for dividing heat treatment of the semiconductor wafer into a plurality of phases (heat treatment phases F1 to F7) to detect a treatment abnormality in the semiconductor wafer, based on a plurality of learning models created for the respective phases (heat treatment phases F1 to F7), based on the temperature and the treatment information.

Abstract: While the size of a coil is maintained, the performance of the coil is improved. A method for designing a gradient coil includes the step of determining performance value evaluation points between a plurality of coils disposed so as to face each other, and determining a stream function on the basis of the performance value evaluation points and the target field method so as to decrease the value of a polynomial evaluation function containing a term of a simple sum of sizes of current density distribution in coil planes; and the step of disposing a continuous current pathway in the coil planes on the basis of contours of the determined stream function.

Abstract: A method of improving corrosion resistance of a cylinder cover including a port that is an intake port or an exhaust port. The cylinder cover is configured such that an annular cooling water passage is formed between an inner peripheral surface of the port and a valve seat ring when the valve seat ring is inserted in the port. The method includes forming a weld overlay layer on each of sealed regions of the inner peripheral surface of the port by laser metal deposition using a welding material made of a nickel-based alloy, a copper alloy, stainless steel, or a titanium alloy, the sealed regions being positioned at both sides of the cooling water passage, respectively.

Abstract: A urea water supply system includes: a first supply valve for supplying urea water; a second supply valve for supplying urea water; a supply passage for connecting a urea water tank and the first and the second supply valves; and an electronic control unit (ECU). The supply passage branches to have a first supply passage extending from a branch point to the first supply valve and a second supply passage extending from the branch point to the second supply valve, and a volume of the first supply passage is greater than a volume of the second supply passage. The ECU opens the first supply valve while keeping the second supply valve closed, for starting filling of the supply passage with urea water, and thereafter determines completion of filling of urea water into the first supply passage.

Abstract: A first node and a second node transmit packets to a third node via a switch. The packets are buffered in a Tx buffer in the switch and then transmitted to the third node. When the third node detects a sign of congestion at the Tx buffer based on the reception frequency of the packets, it is recognized, from transmitter addresses included in the received packets, that the nodes transmitting the packets to the third node are the first node and the second node, and a control packet for a transmission stop request is transmitted to the first node and the second node. On receiving the control packet for a transmission stop request, the first node stops transmission of only packets addressed to the third node. On receiving the control packet for a transmission stop request, the second node stops transmission of only packets addressed to the third node.

Abstract: A heat treatment apparatus is a heat treatment apparatus managing a dummy wafer. The heat treatment apparatus includes: a heat treatment part performing a heat treatment on the dummy wafer; a damage detection part detecting a damage of the dummy wafer; and a controller determining whether or not the dummy wafer can be used based on damage information detected by the damage detection part.

Abstract: A method of improving corrosion resistance of a cylinder cover including a port that is an intake port or an exhaust port. The cylinder cover is configured such that an annular cooling water passage is formed between an inner peripheral surface of the port and a valve seat ring when the valve seat ring is inserted in the port. The method includes forming a weld overlay layer on each of sealed regions of the inner peripheral surface of the port by laser metal deposition using a welding material made of a nickel-based alloy, a copper alloy, stainless steel, or a titanium alloy, the sealed regions being positioned at both sides of the cooling water passage, respectively.

Abstract: While the size of a coil is maintained, the performance of the coil is improved. A method for designing a gradient coil includes the step of determining performance value evaluation points between a plurality of coils disposed so as to face each other, and determining a stream function on the basis of the performance value evaluation points and the target field method so as to decrease the value of a polynomial evaluation function containing a term of a simple sum of sizes of current density distribution in coil planes; and the step of disposing a continuous current pathway in the coil planes on the basis of contours of the determined stream function.

Abstract: A carrier containing a plurality of semiconductor wafers in a lot is transported into a heat treatment apparatus. Thereafter, a recipe specifying treatment procedures and treatment conditions is set for each of the semiconductor wafers. Next, a reflectance of each of the semiconductor wafers stored in the carrier is measured. Based on the set recipe and the measured reflectance of each semiconductor wafer, a predicted attainable temperature of each semiconductor wafer at the time of flash heating treatment is calculated, and the calculated predicted attainable temperature is displayed. This allows the setting of the treatment conditions with reference to the displayed predicted attainable temperature, to thereby easily achieve the setting of the heat treatment conditions.

Abstract: A urea water supply system includes: a first supply valve for supplying urea water; a second supply valve for supplying urea water; a supply passage for connecting a urea water tank and the first and the second supply valves; and an electronic control unit (ECU). The supply passage branches to have a first supply passage extending from a branch point to the first supply valve and a second supply passage extending from the branch point to the second supply valve, and a volume of the first supply passage is greater than a volume of the second supply passage. The ECU opens the first supply valve while keeping the second supply valve closed, for starting filling of the supply passage with urea water, and thereafter determines completion of filling of urea water into the first supply passage.

Abstract: When a carrier storing a plurality of dummy wafers therein is transported into a heat treatment apparatus, the carrier is registered as a dummy carrier exclusive to the dummy wafers. A dummy database in which a treatment history of each of the dummy wafers is associated with the carrier is held in a storage part. The treatment history of each of the dummy wafers registered in the dummy database is displayed on a display part of the heat treatment apparatus. An operator of the heat treatment apparatus views the displayed information to thereby appropriately grasp and manage the treatment history of each of the dummy wafers.

Abstract: A first node and a second node transmit packets to a third node via a switch. The packets are buffered in a Tx buffer in the switch and then transmitted to the third node. When the third node detects a sign of congestion at the Tx buffer based on the reception frequency of the packets, it is recognized, from transmitter addresses included in the received packets, that the nodes transmitting the packets to the third node are the first node and the second node, and a control packet for a transmission stop request is transmitted to the first node and the second node. On receiving the control packet for a transmission stop request, the first node stops transmission of only packets addressed to the third node. On receiving the control packet for a transmission stop request, the second node stops transmission of only packets addressed to the third node.

Abstract: Multiple theoretical reflectances determined by simulation for a silicon substrate with thin films of multiple types and thicknesses formed thereon are registered in association with the types and the thicknesses in a database. A carrier storing semiconductor wafers in a lot is transported into a heat treatment apparatus. A reflectance of a semiconductor wafer is measured by applying light to a surface of the semiconductor wafer. The theoretical reflectance of the semiconductor wafer is calculated from the measured reflectance thereof. A theoretical reflectance closely resembling the theoretical reflectance of the semiconductor wafer is extracted from among the multiple theoretical reflectances registered in the database, whereby the type and thickness of the thin film formed on the surface of the semiconductor wafer are specified. Treatment conditions for the semiconductor wafer are determined based on the specified type and thickness of the thin film.

Abstract: A medium transport device includes a medium guide member, a driving source, a first movement member, a movement restricting member, and a second moving member. The medium guide member is movable between a first guide position, in which the medium guide member guides a medium toward a receiving member on which the medium is loaded, and a second guide position, in which the medium guide member guides the medium from the receiving member into the device. The driving source moves the medium guide member. The first movement member moves the medium guide member in accordance with an operation of the driving source. The movement restricting member is movable together with the medium guide member.

Abstract: A medium transport device includes a transporting member, a medium offsetting member, a guide member, and an interlocking member. The guide member is located upstream of the transporting member in a medium transport direction. The guide member is movable between a first position, in which the guide member guides the medium toward the medium accommodating member, and a second position, in which the guide member guides the medium to a destination different from the medium accommodating member, to guide the medium. The interlocking member moves the guide member between the first position and the second position in conjunction with a movement of the medium offsetting member in a width direction of the medium offsetting member.