Abstract: A water repellent composition containing: (A) water repellent particles in which the number of surface alkyl groups on the water repellent particles is 600×1018-50,000×1018 per 1 g of water repellent particles; (B) a water-repellent resin which is a polymer having a long-chain C7-40 hydrocarbon group; and (C) a liquid medium. The water-repellent particles preferably have an average primary particle size of 1-100 nm.

Abstract: There is provided a server that includes: an inspection item/main part correspondence table in which inspection items of the work machine and main parts of the work machine are associated; an inspection item list acquisition unit acquiring an inspection item list of the inspection target machine based on information about the inspection target machine received from the terminal; and a main part list acquisition unit acquiring a main part list in which the service parts are enumerated, being associated with the inspection items of the inspection target machine, based on the inspection item/main part correspondence table. The main part list acquisition unit transmits the acquired main part list to the terminal via the communication circuit as the selection information about the service parts.

Abstract: A process of forming a nitride semiconductor device is disclosed. The process includes steps of: (a) forming insulating films on a semiconductor stack, where the insulating films include a first silicon nitride (SiN) film, a silicon oxide (SiO2) film, and a second SiN film; (b) forming an opening in the insulating films; (c) widening the opening in the SiO2 film; (d) forming a recess in the semiconductor stack using the insulating films as a mask; (e) growing a doped region within the recess and simultaneously depositing the nitride semiconductor material constituting the doped region on the second SiN film; and (f) removing the nitride semiconductor material deposited on the second SiN film and the second SiN film by removing the SiO2 film.

Abstract: A non-fluorinated block copolymer including at least one block segment (A), wherein the block segment (A) includes a repeating unit formed from one or more types of acrylic monomers having a long-chain hydrocarbon group containing 7-40 carbon atoms. The non-fluorinated block copolymer preferably contains a segment (B) constituted by at least one of: (B1) a block segment including a repeating unit, different from that of segment (A), that is formed from an acrylic monomer having a long-chain hydrocarbon group comprising 7-40 carbon atoms; (B2) a block segment including a repeating unit formed from an acrylic monomer not having a long-chain hydrocarbon group; and (B3) a random segment formed from at least two types of acrylic monomers.

Abstract: A calibration data generation apparatus includes a flow rate sensor that measures the flow rate of a fluid flowing through a fluid control valve; a differential pressure control mechanism; a temperature control mechanism; and a control unit that when the fluid passing has sound velocity, uses the temperature control mechanism to change the temperature from a reference temperature to comparative temperature. In addition, the control unit includes a valve opening control part that controls the fluid control valve so that at the comparative temperature, an output value outputted from one of the position sensor and the flow rate sensor becomes equal to the reference output value of the one; and a calibration data generation part that generates the calibration data on the basis of a calibration data generation output value outputted from the other one of the position sensor and the flow rate sensor.

Abstract: A method for producing a paper, which includes applying at least one of ionizing radiation and plasma to at least one of a paper base and a compound (A) selected from: a compound having a carbon-carbon unsaturated bond and containing no fluorine atom in a molecular structure, and a compound containing no fluorine atom in a molecular structure in which radicals are generated by irradiation of an electron beam to the compound, to introduce a layer formed from the compound (A) on a surface of the paper base.

Abstract: Provided is a fluid control device that achieves high sealing performance at full closure, and can suppress damage to a valve body or a valve seat surface even without mechanical accuracy improvements. The fluid control device includes: a fluid control valve provided in a flow path through which fluid flows: and a control mechanism that controls the fluid control valve. The fluid control valve includes: a valve seat surface; a valve body that contacts and separates from the valve seat surface; and an actuator that drives the valve body. Further, the control mechanism includes a speed adjustment part that when the valve body is brought close to the valve seat surface in order to fully close the fluid control valve, and the valve seat surface and the valve body reach a predetermined distance apart, reduces the moving speed of the valve body more than before reaching the predetermined distance.

Abstract: The locking device includes a key having a cylindrical shaft in which a guide groove is formed in the axial direction, and a cylinder lock which includes an outer cylinder, an inner cylinder, a locking bar and a tumbler, the inner cylinder has an inner cylinder main body rotatably accommodated in the outer cylinder, a rod fixed to the inner cylinder main body, and a key insertion slot, the locking bar is interposed between the inner cylinder main body and the outer cylinder and prevents the rotation of the inner cylinder by engaging and disengagingly locking the inner cylinder main body and the outer cylinder, and the tumbler has a guide convex portion engageably and detachably engaged with the key groove, and an inner concave portion rotatably received in the inner cylinder and dropping the locking bar.

Abstract: A surface-treating agent including at least one perfluoro(poly)ether group containing silane compound of the formula (1): wherein each of symbols is as defined herein, wherein a number average molecular weight of the perfluoro(poly)ether group containing silane compound is 3000 or more and 6000 or less, and wherein 80 mol % or more of the perfluoro(poly)ether group containing silane compound contained in the surface-treating agent is a compound wherein g is 2 or more.

Abstract: A surface-treating agent including at least one perfluoro(poly)ether group containing silane compound of the formula (1): wherein Rf, PFPE, Z, Q, R1, R2, X, Y, e, f, g, h and n are as defined herein. Also disclosed is a process for preparing the compound of formula (1).

Abstract: In order to provide a flow rate control apparatus capable of reducing noise while reducing delay, the flow rate control apparatus includes: a fluid resistor provided in a flow path; a downstream valve provided downstream of the fluid resistor; and a downstream pressure sensor provided between the fluid resistor and the downstream valve. The apparatus calculates a resistor flow rate through the fluid resistor; the time change amount of the downstream pressure; on the basis of the resistor flow rate, the difference between the resistor flow rate and the time change amount of the downstream side pressure, and a weighting factor, calculates a weighted average to estimate a valve flow rate through the downstream valve; and, on the basis of the deviation between a set flow rate and the valve flow rate, controls the downstream side valve, in which the weighting factor is configured to be changeable.

Abstract: An ion exchanger includes a case and a cartridge. The case has an opening open upward. The cartridge is detachably attached to the case through the opening and includes a circumferential wall, a top wall, a lower opening, and a porous body. The cartridge accommodates an ion exchange resin. The porous body closes the lower opening of the cartridge and allows coolant to pass through while not allowing the ion exchange resin to pass through. A discharge hole that allows air inside the cartridge to be discharged out of the cartridge is formed in at least one of the top wall of the cartridge or a portion of the circumferential wall of the cartridge that is opposed to the inner circumferential surface of the case body.

Abstract: A process of forming a field effect transistor is disclosed. The process includes steps of depositing a first silicon nitride (SiN) film on a semiconductor layer by a low pressure chemical vapor deposition (LPCVD) technique; depositing a second SiN film on the first SiN film by plasma assisted chemical vapor deposition (p-CVD) technique; preparing a photoresist mask on the second SiN film, the photoresist mask having an opening in a position corresponding to the gate electrode; dry-etching the second SiN film and the first SiN film continuously in a portion of the opening in the photoresist mask to form an opening in the first SiN film and an opening in the second SiN film, the openings in the first and second SiN films exposing the semiconductor layer; and filling at least the opening in the first SiN film by the gate electrode. A feature of the process is that the opening in the first SiN film has an inclined side against the semiconductor layer and gradually widens from the semiconductor layer.

Abstract: An inspection support system for a construction machine including a camera 416 and a display (monitor) 414 and acquiring image data of the construction machine provided in an inspection report includes a guidance display section 432 that displays a guidance image on the display 414, the guidance image showing a composition of a photographing object photographed as the image data, a photographing section 450 that acquires a photographic subject image photographed by the camera 416 as image data, and a transmitting section that transmits the image data acquired to a management server 300 that manages the inspection report.

Abstract: It is contemplated to arrange a plurality of operational levers without inviting complications of the arrangements or enlargement of the vehicle body, intensively for better operability between the driver's seat and one of the right and left rear fenders. In a riding work vehicle, a plurality of operational levers 25, 26 are disposed adjacent on the right and left sides between a driver's seat and one of right and left rear fenders 7. Of the plurality of operational levers 25, 26, an inner operational lever 25 disposed on the side of the driver's seat is displaceable in a front-rear direction of a vehicle body.

Abstract: A transistor type of field effect transistor (FET) having a field plate is disclosed. The FET provides an active region and two inactive regions sandwiching the active region therebetween, where the electrodes are provided in the active region. The FET further includes fingers and buses of the drain and the source. The fingers overlap with the electrodes of the drain and the source; while the busses are provided in respective inactive regions. The field plate includes a field plate finger and a field plate interconnection. The field plate finger extends parallel to the gate electrode in a side facing the drain electrode. The field plate interconnection connects the field plate finger with the source interconnection in the inactive region opposite to the inactive region where the drain bus exists.

Abstract: In order to provide a flow rate control apparatus capable of reducing noise while reducing delay, the flow rate control apparatus includes: a fluid resistor provided in a flow path; a downstream valve provided downstream of the fluid resistor; and a downstream pressure sensor provided between the fluid resistor and the downstream valve. The apparatus calculates a resistor flow rate through the fluid resistor; the time change amount of the downstream pressure; on the basis of the resistor flow rate, the difference between the resistor flow rate and the time change amount of the downstream side pressure, and a weighting factor, calculates a weighted average to estimate a valve flow rate through the downstream valve; and, on the basis of the deviation between a set flow rate and the valve flow rate, controls the downstream side valve, in which the weighting factor is configured to be changeable.

Abstract: A process of forming a gate electrode in an electrode device is disclosed. The process includes steps of, depositing an insulating film on a nitride semiconductor layer; forming a photoresist with an opening corresponding to the gate electrode on the insulating film; forming a recess in the insulating film using the photoresist as an etching mask, the recess leaving a rest portion in the insulating film; exposing the photoresist in oxygen plasma; baking the photoresist to make an edge of the opening thereof dull; etching the rest portion of the insulating film using the dulled photoresist as an etching mask; and forming the gate electrode so as to be in contact with the semiconductor layer through the opening in the insulating film.

Abstract: The locking device includes a key having a cylindrical shaft in which a guide groove is formed in the axial direction, and a cylinder lock which includes an outer cylinder, an inner cylinder, a locking bar and a tumbler, the inner cylinder has an inner cylinder main body rotatably accommodated in the outer cylinder, a rod fixed to the inner cylinder main body, and a key insertion slot, the locking bar is interposed between the inner cylinder main body and the outer cylinder and prevents the rotation of the inner cylinder by engaging and disengagingly locking the inner cylinder main body and the outer cylinder, and the tumbler has a guide convex portion engageably and detachably engaged with the key groove, and an inner concave portion rotatably received in the inner cylinder and dropping the locking bar.

Abstract: A process of forming a field effect transistor is disclosed. The process includes steps of depositing a first silicon nitride (SiN) film on a semiconductor layer by a low pressure chemical vapor deposition (LPCVD) technique; depositing a second SiN film on the first SiN film by plasma assisted chemical vapor deposition (p-CVD) technique; preparing a photoresist mask on the second SiN film, the photoresist mask having an opening in a position corresponding to the gate electrode; dry-etching the second SiN film and the first SiN film continuously in a portion of the opening in the photoresist mask to form an opening in the first SiN film and an opening in the second SiN film, the openings in the first and second SiN films exposing the semiconductor layer; and filling at least the opening in the first SiN film by the gate electrode. A feature of the process is that the opening in the first SiN film has an inclined side against the semiconductor layer and gradually widens from the semiconductor layer.