Abstract: An inspection device comprising: a plurality of plungers; and a connection part electrically connecting at least some of the plungers of the plurality of plungers to each other.

Abstract: An inspection device comprising: a first elastomer defining a hole; and a plunger overlapping with the first elastomer, wherein a conductive film is formed over an inner wall of the hole, and the plunger is electrically connected to the conductive film.

Abstract: A plunger comprising: a tip contactor formed by embedding a first conductive material in a recess part provided in a base; a columnar part formed by embedding a second conductive material in a first opening provided in a first resist film formed over the base, the first opening being located above the recess part; and a receiving part formed by embedding a third conductive material in a second opening provided in a second resist film formed over the first resist film, the second opening being located above the first opening.

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate includes a base body having a flat plate shape; an electrode provided at the base body; three or more terminals provided at the base body, each having elasticity and configured to be brought into contact with a peripheral portion of the processing target substrate; and a detecting unit configured to electrically detect a contact of at least one of the terminals with the processing target substrate.

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

Abstract: An electrolytic treatment apparatus 1 (1A) configured to perform an electrolytic treatment on a target substrate includes a substrate holder 10 and an electrolytic processor 20. The substrate holder 10 includes an insulating holding body 11 configured to hold the target substrate and an indirect negative electrode 12 disposed within the holding body 11. A negative voltage is applied to the indirect negative electrode 12. The electrolytic processor 20 is disposed to face the substrate holder 10 and configured to apply a voltage to the target substrate and an electrolyte in contact with the target substrate.

Abstract: An electrolytic treatment apparatus 1 (1A) configured to perform an electrolytic treatment on a target substrate includes a substrate holder 10 and an electrolytic processor 20. The substrate holder 10 includes an insulating holding body 11 configured to hold the target substrate and an indirect negative electrode 12 disposed within the holding body 11. A negative voltage is applied to the indirect negative electrode 12. The electrolytic processor 20 is disposed to face the substrate holder 10 and configured to apply a voltage to the target substrate and an electrolyte in contact with the target substrate.

Abstract: A manufacturing apparatus for a semiconductor device includes a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate. The electrolytic processing unit includes a direct electrode configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate.

Abstract: A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

Abstract: A substrate processing method of performing a predetermined processing by supplying a processing liquid to a processing region of a substrate and using processing target ions in the processing liquid, includes: arranging a template to face the substrate, the template including a passage configured to distribute the processing liquid, a direct electrode, and an indirect electrode, and the substrate including a counter electrode, which matches with the direct electrode, installed in the processing region; supplying the processing liquid to the processing region through the passage; and performing the predetermined processing on the substrate by applying a voltage to the indirect electrode to cause the processing target ions to migrate to the counter electrode side while applying a voltage between the direct electrode and the counter electrode to oxidize or reduce the processing target ions that have migrated to the counter electrode side.

Abstract: An electrolytic treatment apparatus of the present disclosure includes a common electrode and a counter electrode that are disposed such that the treatment liquid is interposed therebetween. A first wiring and a second wiring are connected to the common electrode, a capacitor is provided in the first wiring. Copper ions are moved to the counter electrode side by forming an electric field in the treatment liquid when the capacitor is charged without connecting the first wiring and the second wiring to each other, and the copper ions moved to the counter electrode side are reduced by applying a voltage between the common electrode and the counter electrode when the capacitor is discharged by connecting the first wiring and the second wiring to each other.

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

Abstract: An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate includes a base body having a flat plate shape; an electrode provided at the base body; three or more terminals provided at the base body, each having elasticity and configured to be brought into contact with a peripheral portion of the processing target substrate; and a detecting unit configured to electrically detect a contact of at least one of the terminals with the processing target substrate.

Abstract: An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substrate 2 while rotating the substrate 2. The substrate 2 is rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate 2.

Abstract: A manufacturing apparatus for a semiconductor device includes a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate. The electrolytic processing unit includes a direct electrode configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate.

Abstract: A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

Abstract: A substrate processing apparatus can allow palladium atoms to be coupled to a surface of a substrate without performing a silane coupling processing with a silane coupling agent on the substrate. In a substrate processing apparatus 1, a plating unit 4 includes a catalyst solution supply unit 43a and a plating liquid supply unit 45. The catalyst solution supply unit 43a forms a catalyst layer 91 on a surface of a substrate W1 by supplying, onto the substrate W1, a catalyst solution L1 containing a complex of a palladium ion and a monocyclic 5- or 6-membered aromatic or aliphatic heterocyclic compound having one or two nitrogen atoms as a heteroatom. After the catalyst solution L1 is supplied, the plating liquid supply unit 45 forms an electroless plating layer 92 on the catalyst layer 91 formed on a substrate W2 by supplying a plating liquid M1 onto the substrate W2.

Abstract: In a substrate processing apparatus 1, a plating unit 4 includes a catalyst solution supply unit 43a and a plating liquid supply unit 45. By supplying, from the catalyst solution supply unit 43a onto a substrate W1 having an impurity-doped polysilicon film 90 containing a high concentration of impurities on a surface thereof, an alkaline catalyst solution L1 containing a complex of a palladium ion and a monocyclic 5- or 6-membered aromatic or aliphatic heterocyclic compound having one or two nitrogen atoms as a heteroatom, a catalyst layer 91 is formed on a surface of the impurity-doped polysilicon film 90 of the substrate W1. After the catalyst solution L1 is supplied, an electroless plating layer 92 is formed on the catalyst layer 91 formed on a substrate W2 by supplying a plating liquid M1 from the plating liquid supply unit 45 onto the substrate W2.

Abstract: An electrolytic treatment apparatus of the present disclosure includes a common electrode and a counter electrode that are disposed such that the treatment liquid is interposed therebetween. A first wiring and a second wiring are connected to the common electrode, a capacitor is provided in the first wiring. Copper ions are moved to the counter electrode side by forming an electric field in the treatment liquid when the capacitor is charged without connecting the first wiring and the second wiring to each other, and the copper ions moved to the counter electrode side are reduced by applying a voltage between the common electrode and the counter electrode when the capacitor is discharged by connecting the first wiring and the second wiring to each other.

Abstract: An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substrate 2 while rotating the substrate 2. The substrate 2 is rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate 2.