Abstract: A method for manufacturing a semiconductor device in which probes and the layout of the electrode pads of a test element group (TEG) are associated is provided. As a semiconductor device is miniaturized, a scribe area on a wafer also tends to decrease. Accordingly, it is necessary to reduce the size of a TEG arranged in the scribe area, and efficiently arrange an electrode pad for probe contact. Thus, it is necessary to associate the probes and the layout of the electrode pad. According to the method, a layout of a TEG electrode pad corresponding to a plurality of probes arranged in a fan shape or probes manufactured by Micro Electro Mechanical Systems (MEMS) technology is provided.

Abstract: An anodic oxidation-assisted grinding apparatus includes an electrolyte supply passage configured to pour an electrolyte at least between a cathode and a workpiece, a direct current power source configured to apply a direct current, via the electrolyte, to an anode, the cathode, and the workpiece to form an anodic oxidation film on a surface of the workpiece, and a grindstone configured to grind the anodic oxidation film formed on the surface of the workpiece.

Abstract: In an n-type 4H-SiC single crystal substrate of the present disclosure, the concentration of the element N as a donor and the concentration of the element B as an acceptor are both 3×1018/cm3 or more, and a threading dislocation density is less than 4,000/cm2.

Abstract: A method for producing a p-type 4H—SiC single crystal includes sublimating a nitrided aluminum raw material and a SiC raw material. Further, there is a stacking of a SiC single crystal, which is co-doped with aluminum and nitrogen, on one surface of a seed crystal.

Abstract: To provide a data processing device of production equipment that can generate data usable by an operator or an administrator by performing processing for a collected plurality of types of data. A data processing device includes a reference-data acquiring unit configured to acquire, in production equipment, reference data including information concerning time in which a reference for grouping of data operates, a target-data acquiring unit configured to acquire target data concerning a state of the production equipment detected by detectors provided in the production equipment, and a combined-data generating unit configured to generate, for each group of the reference data, combined data for each group obtained by combining, with the reference data, data detected in the same period of time as an operation period of time of the reference data in the target data.

Abstract: The present invention relates to a toner binder containing: a polyester resin (A); and a vinyl resin (B), wherein the polyester resin (A) has an acid value of 2 mg KOH/g or more, the vinyl resin (B) has a weight average molecular weight of 4,000 to 40,000, the vinyl resin (B) is a polymer essentially containing a monomer (m) whose homopolymer has an SP value of 11.5 to 16.5 as a constituent monomer, the weight percentage of the monomer (m) in monomers constituting the vinyl resin (B) is 1 wt % or more based on the total weight of the monomers constituting the vinyl resin (B), the polyester resin (A) and the vinyl resin (B) are present at a weight ratio (A)/(B) of 80/20 to 99.5/0.

Abstract: An n-type SiC single crystal substrate of the present invention is provided which is a substrate doped with both a donor and an acceptor, and has a difference between a donor concentration and an acceptor concentration in an outer peripheral portion which is smaller than a difference between a donor concentration and an acceptor concentration in a central portion, and is smaller than 3.0×1019/cm3.

Abstract: A silicon carbide epitaxial wafer (10) of the present invention is a silicon carbide epitaxial wafer including: a silicon carbide substrate (1) and a silicon carbide layer (2) provided on a first principal plane (1A) of the silicon carbide substrate (1) and having a film thickness of 100 ?m or more, wherein a warpage amount of the silicon carbide epitaxial wafer is ?20 ?m or more and 20 ?m or less.

Abstract: A method for producing a p-type 4H-SiC single crystal includes sublimating a nitrided aluminum raw material and a SiC raw material. Further, there is a stacking of a SiC single crystal, which is co-doped with aluminum and nitrogen, on one surface of a seed crystal.

Abstract: A liquid injection method for injecting a liquid into a culture vessel includes tilting the culture vessel around a horizontal axis at a tilt angle (X°) of greater than 0° and 50° or less, wherein adherent cells are adhered to the culture vessel; and injecting the liquid into the culture vessel at a predetermined linear velocity (Y mm/s) via a wall surface of the culture vessel tilted at the tilt angle (X°), wherein the tilt angle (X) and the linear velocity (Y) satisfy the following (formula 1): Y?5.075X+123 (formula 1).

Abstract: The present invention relates to a toner binder containing: a polyester resin (A); and a vinyl resin (B), wherein the polyester resin (A) has an acid value of 2 mg KOH/g or more, the vinyl resin (B) has a weight average molecular weight of 4,000 to 40,000, the vinyl resin (B) is a polymer essentially containing a monomer (m) whose homopolymer has an SP value of 11.5 to 16.5 as a constituent monomer, the weight percentage of the monomer (m) in monomers constituting the vinyl resin (B) is 1 wt % or more based on the total weight of the monomers constituting the vinyl resin (B), the polyester resin (A) and the vinyl resin (B) are present at a weight ratio (A)/(B) of 80/20 to 99.5/0.

Abstract: In an n-type 4H-SiC single crystal substrate of the present disclosure, the concentration of the element N as a donor and the concentration of the element B as an acceptor are both 3×1018/cm3 or more, and a threading dislocation density is less than 4,000/cm2.

Abstract: Disclosed are a method for screening for a growth-promoting factor for pluripotent stem cells with a conditioned medium which is generated by culturing feeder cells in a serum-free medium that contains L-ascorbic acid, insulin, transferrin, selenium, and sodium bicarbonate and does not contain a serum nor serum replacement; a method for growing pluripotent stem cells via feeder-free culture using the conditioned medium; and a method for growing pluripotent stem cells by carrying out feeder-free culture of pluripotent stem cells cultured in advance on feeder cells in the serum-free medium.

Abstract: A high quality silicon carbide epitaxial wafer using a p-type silicon carbide single crystal substrate of low resistivity. The silicon carbide epitaxial wafer includes a p-type 4H—SiC single crystal substrate that has a first main surface having an off angle with respect to (0001) plane, and has a resistivity of less than 0.4 ?cm, and a silicon carbide epitaxial layer that is disposed on the first main surface of the p-type 4H—SiC single crystal substrate, in which an off direction of the off angle is the <01-10> direction.

Abstract: A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.

Abstract: This invention relates to a method for screening for a growth-promoting factor for pluripotent stem cells with a conditioned medium which is generated by culturing feeder cells in a serum-free medium that contains L-ascorbic acid, insulin, transferrin, selenium, and sodium bicarbonate and does not contain a serum nor serum replacement; a method for growing pluripotent stem cells via feeder-free culture using the conditioned medium; and a method for growing pluripotent stem cells by carrying out feeder-free culture of pluripotent stem cells cultured in advance on feeder cells in the serum-free medium.

Abstract: A silicon carbide epitaxial wafer (10) of the present invention is a silicon carbide epitaxial wafer including: a silicon carbide substrate (1) and a silicon carbide layer (2) provided on a first principal plane (1A) of the silicon carbide substrate (1) and having a film thickness of 100 ?m or more, wherein a warpage amount of the silicon carbide epitaxial wafer is ?20 ?m or more and 20 ?m or less.

Abstract: An n-type SiC single crystal substrate of the present invention is provided which is a substrate doped with both a donor and an acceptor, and has a difference between a donor concentration and an acceptor concentration in an outer peripheral portion which is smaller than a difference between a donor concentration and an acceptor concentration in a central portion, and is smaller than 3.0×1019/cm3.

Abstract: It is an object of the present invention to provide a cell culture medium capable of enhancing cell growth efficiency without using feeder cells, in particular which does not comprise serum. The present invention provides a cell culture medium which comprises growth arrest-specific 6 (GAS6) and does not comprise serum.

Abstract: A method for manufacturing an epitaxial wafer comprising a silicon carbide substrate and a silicon carbide voltage-blocking-layer, the method includes: epitaxially growing a buffer layer on the substrate, doping a main dopant for determining a conductivity type of the buffer layer and doping an auxiliary dopant for capturing minority carriers in the buffer layer at a doping concentration less than the doping concentration of the main dopant, so that the buffer layer enhances capturing and extinction of the minority carriers, the minority carriers flowing in a direction from the voltage-blocking-layer to the substrate, so that the buffer layer has a lower resistivity than the voltage-blocking-layer, and so that the buffer layer includes silicon carbide as a main component; and epitaxially growing the voltage-blocking-layer on the buffer layer.