Abstract: An insulation module includes: a light-emitting element; a light-receiving element that receives light from the light-emitting element; a first die pad on which the light-emitting element is mounted; a second die pad that is provided in alignment with the first die pad and on which the light-receiving element is mounted; a transparent resin that at least covers both the light-emitting element and the light-receiving element; a reflection member that covers at least the transparent resin and is formed from a material that reflects light from the light-emitting element; and an encapsulation resin that encapsulates the reflection member as well as the transparent resin and is formed from a material having a light-blocking effect. At least one of the reflection member and the transparent resin includes inorganic particles that absorb or reflect light from the light-emitting element.

Abstract: This insulation module includes: a first light-emitting element and a first light-receiving element that constitute a photocoupler; a first plate-shaped member that has light-transmitting properties and is provided between the first light-receiving element and the first light-emitting element; an encapsulation resin that at least encapsulates the light-emitting element and the light-receiving element; and a plurality of terminals that are provided to a first plastic side surface of the encapsulation resin. The first plate-shaped member is layered on the light-receiving surface of the first light-receiving element, and the first light-emitting element is layered on the first plate-shaped member. Recessed-projecting portions are provided to sections between adjacent terminals among the plurality of terminals on the first plastic side surface.

Abstract: This insulation module comprises: a light-emitting element that has a light-emitting surface and a pad formed on the light-emitting surface; a light-receiving element that has a light-receiving surface facing the light-emitting surface with a space therebetween, and that constitutes a photocoupler together with the light-emitting element; a plate-shaped member that is provided between the light-emitting surface and the light-receiving surface, has light-transmitting and insulating properties, and is inclined with respect to both the light-emitting surface and the light-receiving surface; and a wire that is connected to the pad. The pad is disposed offset from the center toward a section among the light-emitting surface where the distance to the plate-shaped member increases.

Abstract: A semiconductor light emitting device includes a semiconductor laser element including a light emitting surface from which a laser beam is emitted and a light-transmissive resin member covering the light emitting surface of the semiconductor laser element. The semiconductor light emitting device further includes a diffusing agent mixed into the resin member.

Abstract: A semiconductor light-emitting device includes a substrate, a semiconductor light-emitting element, and a resin member. The substrate includes a base member and a conductive part. The semiconductor light-emitting element is supported on the substrate. The resin member covers at least a portion of the substrate. The base member has a front surface and a back surface that face opposite to each other in a thickness direction. The conductive part includes a front portion formed on the front surface. The semiconductor light-emitting element is mounted on the front portion. The resin member includes a frame-shaped portion surrounding the semiconductor light-emitting element as viewed in the thickness direction, and a front-surface covering portion connected to the frame-shaped portion and covering a portion of the front surface of the base member that is exposed from the front portion.

Abstract: A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts.

Abstract: A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts.

Abstract: A semiconductor device includes: a supporting member having a wiring including a die-pad; a semiconductor element bonded to the die-pad; a wire bonded to the wiring and the semiconductor element; and a bonding layer that has a conductivity and bonds the die-pad and the semiconductor element. When viewed in a thickness direction of the semiconductor element, the die-pad includes a first region included inside a peripheral edge of the semiconductor element and a second region that is connected to the first region and extends farther then the peripheral edge of the semiconductor element. When viewed in the thickness direction, the wire is separated from the second region.

Abstract: An LED module according to the present invention includes an LED unit 2 and a case 1, where the LED unit includes an LED chip 21, and the case 1 includes a main body 11 made of a ceramic material and a pad 12a on which the LED unit 2 is mounted. The outer edge 121a of the pad 12a is positioned inward of the outer edge 2a of the LED unit 2 as viewed in plan. These arrangements prevent the light emission amount of the LED module A1 from reducing with time.

Abstract: Semiconductor light-emitting device, includes: substrate having base and conductive part; first to third semiconductor light-emitting elements; first to third wires connected to the first to third semiconductor light-emitting elements respectively; and light-transmitting resin part covering the first to the third semiconductor light-emitting elements, wherein the base has main and rear surfaces facing opposite sides in thickness direction of the base, wherein the conductive part includes main surface part on the main surface, wherein the main surface part includes main surface first part where the first and second semiconductor light-emitting elements are mounted, wherein the main surface first part reaches both ends of the main surface in first direction perpendicular to the thickness direction, and wherein the main surface first part is separated from both the main surface part where the third semiconductor light-emitting element is mounted and the main surface part where the first, second, and third wires

Abstract: Semiconductor light-emitting device, includes: substrate having base and conductive part; first to third semiconductor light-emitting elements; first to third wires connected to the first to third semiconductor light-emitting elements respectively; and light-transmitting resin part covering the first to the third semiconductor light-emitting elements, wherein the base has main and rear surfaces facing opposite sides in thickness direction of the base, wherein the conductive part includes main surface part on the main surface, wherein the main surface part includes main surface first part where the first and second semiconductor light-emitting elements are mounted, wherein the main surface first part reaches both ends of the main surface in first direction perpendicular to the thickness direction, and wherein the main surface first part is separated from both the main surface part where the third semiconductor light-emitting element is mounted and the main surface part where the first, second, and third wires

Abstract: Semiconductor light emitting device includes: substrate including main and back surfaces, first and second side surfaces, and bottom and top surfaces, wherein main surface includes first to fourth sides; first main surface electrode on main surface and including first base portion contacting the sides of the main surface, and die pad connected to first base portion; second main surface electrode disposed on the main surface and including second base portion contacting first and third sides of the main surface, and wire pad connected to second base portion; semiconductor light emitting element including first electrode pad and mounted on die pad; wire connecting first electrode pad and wire pad; first insulating film covering portion between first base portion and die pad; second insulating film covering portion between second base portion and wire pad and having end portions contacting main surface; and light-transmitting sealing resin.

Abstract: A semiconductor light-emitting device includes a substrate, a semiconductor light-emitting element, and a resin member. The substrate includes a base member and a conductive part. The semiconductor light-emitting element is supported on the substrate. The resin member covers at least a portion of the substrate. The base member has a front surface and a back surface that face opposite to each other in a thickness direction. The conductive part includes a front portion formed on the front surface. The semiconductor light-emitting element is mounted on the front portion. The resin member includes a frame-shaped portion surrounding the semiconductor light-emitting element as viewed in the thickness direction, and a front-surface covering portion connected to the frame-shaped portion and covering a portion of the front surface of the base member that is exposed from the front portion.

Abstract: A terahertz device includes a base member, a terahertz element, an antenna base, and a reflection film. The terahertz element is mounted on the base member and configured to generate an electromagnetic wave. The antenna base is located opposing the base member and includes an antenna surface. The reflection film is formed on the antenna surface to reflect at least part of the electromagnetic wave generated by the terahertz element in one direction.

Abstract: A semiconductor light-emitting device includes a substrate, a semiconductor light-emitting element, and a resin member. The substrate includes a base member and a conductive part. The semiconductor light-emitting element is supported on the substrate. The resin member covers at least a portion of the substrate. The base member has a front surface and a back surface that face opposite to each other in a thickness direction. The conductive part includes a front portion formed on the front surface. The semiconductor light-emitting element is mounted on the front portion. The resin member includes a frame-shaped portion surrounding the semiconductor light-emitting element as viewed in the thickness direction, and a front-surface covering portion connected to the frame-shaped portion and covering a portion of the front surface of the base member that is exposed from the front portion.

Abstract: The present disclosure provideds a side-view type semiconductor light emitting device of the disclosure includes a multilayer substrate having a plurality of substrates, a plurality of conductive layers, and a plurality of semiconductor light emitting elements. The multilayer substrate has a main surface on which the semiconductor light emitting elements are mounted, a back surface facing an opposite side of the main surface and having external electrodes formed thereon, and a mounting surface intersecting both the main surface and the back surface. The plurality of conductive layers have conductive exposed portions exposed from the mounting surface.

Abstract: A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts.

Abstract: A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts.