Patents by Inventor TOMOKI AKAI

TOMOKI AKAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 11476355
    Abstract: A semiconductor device having IGBT, FWD and separate cell regions in a common semiconductor substrate, includes: a drift layer; a base layer; trench gate structures; an emitter region; a collector layer; a cathode layer; a first electrode; and a second electrode. The IGBT region having a first gate electrode in first and second IGBT trenches with a grid pattern is on the collector layer, and the FWD region with a second gate electrode in first and second FWD trenches with a grid pattern is on the cathode layer.
    Type: Grant
    Filed: March 10, 2021
    Date of Patent: October 18, 2022
    Assignee: DENSO CORPORATION
    Inventors: Tomoki Akai, Yuma Kagata, Masaru Senoo, Jun Okawara
  • SEMICONDUCTOR DEVICE
    Publication number: 20210202725
    Abstract: A semiconductor device having IGBT, FWD and separate cell regions in a common semiconductor substrate, includes: a drift layer; a base layer; trench gate structures; an emitter region; a collector layer; a cathode layer; a first electrode; and a second electrode. The IGBT region having a first gate electrode in first and second IGBT trenches with a grid pattern is on the collector layer, and the FWD region with a second gate electrode in first and second FWD trenches with a grid pattern is on the cathode layer.
    Type: Application
    Filed: March 10, 2021
    Publication date: July 1, 2021
    Inventors: TOMOKI AKAI, YUMA KAGATA, MASARU SENOO, JUN OKAWARA