Abstract: A film deposition apparatus includes: a turntable; a first reaction gas supply part and a second reaction gas supply part extending from a circumferential edge toward a rotation center of the turntable; and a first separation gas supply part provided between the first and second reaction gas supply parts. A first space contains the first reaction gas supply part and has a first height. A second space contains the second reaction gas supply part and has a second height. A third space contains a first separation gas supply part and has a height lower than the first and second heights. A motor provided under the rotation center of the turntable rotates the turntable. A rotation shaft of the turntable and a drive shaft of the motor are coupled without generation of slip.

Abstract: A film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber is disclosed. This film deposition apparatus includes a turntable rotatably provided in the chamber, a substrate receiving portion that is provided in the turntable and the substrate is placed in, a first reaction gas supplying portion, a second reaction gas supplying portion, a separation gas supplying portion, an upper holding member that may be pressed on an upper center portion of the turntable and is made of one of quartz and a ceramic material; and a lower holding member that may be pressed on a lower center portion of the turntable in order to rotatably hold the turntable in cooperation with the upper holding member.

Abstract: A film deposition apparatus includes: a turntable; a first reaction gas supply part and a second reaction gas supply part extending from a circumferential edge toward a rotation center of the turntable; and a first separation gas supply part provided between the first and second reaction gas supply parts. A first space contains the first reaction gas supply part and has a first height. A second space contains the second reaction gas supply part and has a second height. A third space contains a first separation gas supply part and has a height lower than the first and second heights. A motor provided under the rotation center of the turntable rotates the turntable. A rotation shaft of the turntable and a drive shaft of the motor are coupled without generation of slip.

Abstract: In a film deposition apparatus which deposits a thin film on a substrate by supplying first and second reactive gases in a vacuum chamber, there are provided a turntable, a first reactive gas supplying portion and a second reactive gas supplying portion which are arranged to extend from circumferential positions of the turntable to a center of rotation of the turntable, a first separation gas supplying portion arranged between the first and second reactive gas supplying portions, a first space having a first height and including the first separation gas supplying portion, a second space having a second height and including the second reactive gas supplying portion, a third space having a height lower than the first height and the second height and including the first separation gas supplying portion, a position detecting unit detecting a rotation position of the turntable, and a detection part arranged at a circumferential portion of the turntable and detected by the position detecting unit.

Abstract: A thin film forming apparatus 1 comprises a reaction chamber 2, and an exhaust pipe 5 connected with the reaction chamber 2. A fluorine introducing pipe 17c and a hydrogen introducing pipe 17d are connected with the reaction chamber 2, in order to supply a cleaning gas containing fluorine gas and hydrogen gas into the reaction chamber 2 or into the exhaust pipe 5. The hydrogen introducing pipe 17d includes an inner fluid passage 174 and an outer fluid passage 175 formed to cover around the inner fluid passage 174. The hydrogen gas is supplied through the inner fluid passage 174, while nitrogen gas is supplied through the outer fluid passage 175. Thus, the hydrogen gas to be fed through the inner fluid passage can be supplied from the hydrogen introducing pipe 17d, while being covered with the nitrogen gas.