Abstract: There is disclosed a gradient structure material comprising a substrate 1 and a functional material 2 formed on the substrate. The gradient structure material is thermally treated while a desired gradient temperature is applied to a specific direction and a specific region of the functional material on the substrate. Consequently, without adding “gradient structure” of a component concentration, a content of oxide, or a crystal structure, the functional material on the substrate is provided with useful function which is not heretofore existed, or a performance can be enhanced unlike a conventional technique.

Abstract: Metal which forms a crystalline insulation layer is sputtered at a target and deposited as a film on a silicon substrate, the metal is chemically combined with reactive gas around the silicon substrate to thereby grow a crystal layer of a crystalline insulation substance, and a voltage is applied to the substrate so that ions of the reactive gas around the substrate are attracted to a surface of the silicon substrate and chemically combined with silicon, whereby an insulation silicon compound layer is formed. As a result, a structure is obtained in which a crystalline insulation layer is formed on a crystalline silicon layer through an amorphous insulation film which is formed by a silicon compound which has an excellent insulation characteristic.

Abstract: Metal which forms a crystalline insulation layer is sputtered at a target and deposited as a film on a silicon substrate, the metal is chemically combined with reactive gas around the silicon substrate to thereby grow a crystal layer of a crystalline insulation substance, and a voltage is applied to the substrate so that ions of the reactive gas around the substrate are attracted to a surface of the silicon substrate and chemically combined with silicon, whereby an insulation silicon compound layer is formed. As a result, a structure is obtained in which a crystalline insulation layer is formed on a crystalline silicon layer through an amorphous insulation film which is formed by a silicon compound which has an excellent insulation characteristic.

Abstract: Metal which forms a crystalline insulation layer is sputtered at a target and deposited as a film on a silicon substrate, the metal is chemically combined with reactive gas around the silicon substrate to thereby grow a crystal layer of a crystalline insulation substance, and a voltage is applied to the substrate so that ions of the reactive gas around the substrate are attracted to a surface of the silicon substrate and chemically combined with silicon, whereby an insulation silicon compound layer is formed. As a result, a structure is obtained in which a crystalline insulation layer is formed on a crystalline silicon layer through an amorphous insulation film which is formed by a silicon compound which has an excellent insulation characteristic.

Abstract: Metal which forms a crystalline insulation layer is sputtered at a target and deposited as a film on a silicon substrate, the metal is chemically combined with reactive gas around the silicon substrate to thereby grow a crystal layer of a crystalline insulation substance, and a voltage is applied to the substrate so that ions of the reactive gas around the substrate are attracted to a surface of the silicon substrate and chemically combined with silicon, whereby an insulation silicon compound layer is formed at the interface of the silicon substrate and the crystalline insulation layer. As a result, a structure is obtained in which a crystalline insulation layer is formed on a crystalline silicon layer with an intervening amorphous insulation film which is formed by a silicon compound which has an excellent insulation characteristic.

Abstract: A magnetron sputtering apparatus is herein disclosed, the apparatus comprising a first solenoid coil for generating a first magnetic field, which is disposed on a back side of a sputtering target and a second solenoid coil for generating a second magnetic field which exerts influences on the first magnetic field, which is disposed in the vicinity of the outer periphery of the sputtering target, the magnitude and direction of each current applied to the first and second solenoid coils being changed to continuously move a plasma ring formed on the surface of the sputtering target towards the radial direction, to thus contact and expand the plasma ring; and the magnitude and direction of each current applied to the first and second solenoid coils being appropriately set to a desired value to hold the plasma ring at a desired location in the radial direction for a desired time period.

Abstract: A substrate is surface treated by a sputtering process by placing the substrate between a pair of targets which are located at a predetermined spacing in a sputtering apparatus, driving atoms out of both the targets, and depositing the atoms on the substrate to form a film thereon.