Abstract: The controller is programmed to cause a low-surface-tension liquid supply unit to supply a liquid film of a low-surface-tension liquid to a front surface of a substrate so as to form a liquid film of the low-surface-tension liquid. The controller is programmed to control the substrate rotating unit and the inert gas supply unit so that an inert gas is supplied toward the rotational center position while rotating the substrate, thereby forming an opening spreading from the rotational center position to be formed in the liquid film, and enlarging the opening in a direction away from the rotational center position, and to control the landing-position changing unit to change the landing position of the low-surface-tension liquid to at least two positions except the rotational center position in accordance with enlargement of the opening so that the landing position is placed outside the peripheral edge of the opening.

Abstract: The controller is programmed to cause a low-surface-tension liquid supply unit to supply a liquid film of a low-surface-tension liquid to a front surface of a substrate so as to form a liquid film of the low-surface-tension liquid. The controller is programmed to control the substrate rotating unit and the inert gas supply unit so that an inert gas is supplied toward the rotational center position while rotating the substrate, thereby forming an opening spreading from the rotational center position to be formed in the liquid film, and enlarging the opening in a direction away from the rotational center position, and to control the landing-position changing unit to change the landing position of the low-surface-tension liquid to at least two positions except the rotational center position in accordance with enlargement of the opening so that the landing position is placed outside the peripheral edge of the opening.

Abstract: A hydrophobizing agent vapor is supplied to a substrate and a surface of the substrate including a pattern is hydrophobized. Thereafter, the substrate is dried by vaporizing the hydrophobizing agent. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized. Collapse of a pattern formed on the substrate surface is thereby suppressed or prevented.

Abstract: A hydrophobizing agent vapor is supplied to a substrate and a surface of the substrate including a pattern is hydrophobized. Thereafter, the substrate is dried by vaporizing the hydrophobizing agent. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized. Collapse of a pattern formed on the substrate surface is thereby suppressed or prevented.

Abstract: A hydrophobizing agent is supplied to a substrate and a surface of the substrate is hydrophobized. Thereafter, the substrate is dried. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized. Collapse of a pattern formed on the substrate surface is thereby suppressed or prevented.

Abstract: A hydrophobizing agent is supplied to a substrate and a surface of the substrate is hydrophobized. Thereafter, the substrate is dried. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized. Collapse of a pattern formed on the substrate surface is thereby suppressed or prevented.

Abstract: A liquid hydrophobizing agent is supplied to a substrate and a surface of the substrate is hydrophobized. A solvent, lower in surface tension than water and capable of dissolving the hydrophobizing agent, is supplied to the substrate in a pre-drying rinsing step. Thereafter, the substrate is dried. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized.

Abstract: A hydrophobizing agent is supplied to a substrate and a surface of the substrate is hydrophobized. Thereafter, the substrate is dried. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized. Collapse of a pattern formed on the substrate surface is thereby suppressed or prevented.

Abstract: After the rinsing processing is completed, the rotation speed of the substrate is reduced from 600 rpm to 10 rpm to form a puddle-like DIW liquid film. After the supply of DIW is stopped, the control unit waits for a predetermined time (0.5 seconds) so that the film thickness t1 of the puddle-like liquid film becomes approximately uniform. Then, IPA is discharged to a central part of the surface of the substrate at a flow rate of 100 (mL/min) for instance. By the supply of IPA, DIW is replaced with IPA at the central part of the surface of the substrate to form a replaced region. Further, after three seconds of IPA supply, the rotation speed of the substrate is accelerated from 10 rpm to 300 rpm. This causes the replaced region to expand in a radial direction of the substrate so that the entire surface of the substrate is replaced with the low surface-tension solvent.

Abstract: After the rinsing processing is completed, the rotation speed of the substrate is reduced from 600 rpm to 10 rpm to form a puddle-like DIW liquid film. After the supply of DIW is stopped, the control unit waits for a predetermined time (0.5 seconds) so that the film thickness t1 of the puddle-like liquid film becomes approximately uniform. Then, IPA is discharged to a central part of the surface of the substrate at a flow rate of 100 (mL/min) for instance. By the supply of IPA, DIW is replaced with IPA at the central part of the surface of the substrate to form a replaced region. Further, after three seconds of IPA supply, the rotation speed of the substrate is accelerated from 10 rpm to 300 rpm. This causes the replaced region to expand in a radial direction of the substrate so that the entire surface of the substrate is replaced with the low surface-tension solvent.

Abstract: A substrate treating apparatus for performing a predetermined treatment of substrates includes a treating tank for storing a treating solution, a holder for holding a plurality of substrates arranged in one direction inside the treating tank, and a bubble generating device for generating bubbles in the treating solution stored in the treating tank. The bubble generating device includes a plurality of cylindrical bodies extending in the one direction and arranged in a direction perpendicular to the one direction. Each of the cylindrical bodies is at least partly formed of a porous member extending in the one direction.

Abstract: A substrate treating apparatus for performing a predetermined treatment of substrates includes a treating tank for storing a treating solution, a holder for holding a plurality of substrates arranged in one direction inside the treating tank, and a bubble generating device for generating bubbles in the treating solution stored in the treating tank. The bubble generating device includes a plurality of cylindrical bodies extending in the one direction and arranged in a direction perpendicular to the one direction. Each of the cylindrical bodies is at least partly formed of a porous member extending in the one direction.

Abstract: A substrate treating apparatus for performing a predetermined treatment of substrates. The apparatus includes a holder for holding a plurality of substrates in erected posture, a treating tank for storing hot sulfuric acid at at least 140° C. for treating the substrates immersed therein, and a bubble supply device including a plurality of bubble generating members formed by sintering quartz particles and arranged in the treating tank for generating bubbles of ozone gas such that the bubbles of ozone gas partially overlap one another in a direction parallel to surfaces of the substrates.

Abstract: A fluid heating apparatus is provided which comprises a heat-generating bent tube formed of an electrically conductive material in a tubular configuration and having opposite ends connected in communication to piping through which fluid to be heated is passed, a coil provided outside the heat-generating bent tube and wound to surround the heat-generating bent tube, and a power supply unit for feeding a high-frequency current through the coil. The fluid heating apparatus suppresses the generation of particles in the path of the fluid and may be used to heat gas or liquid in an apparatus for processing semiconductor substrates and flat panel substrates.

Abstract: A fluid heating apparatus is provided which comprises a heat-generating bent tube formed of an electrically conductive material in a tubular configuration and having opposite ends connected in communication to piping through which fluid to be heated is passed, a coil provided outside the heat-generating bent tube and wound to surround the heat-generating bent tube, and a power supply unit for feeding a high-frequency current through the coil. The fluid heating apparatus suppresses the generation of particles in the path of the fluid and may be used to heat gas or liquid in an apparatus for processing semiconductor substrates and flat panel substrates.