Abstract: A photoelectric conversion device includes: a wavelength converting region that absorbs ambient light to generate electrons and holes, and recombines the generated electrons and holes to generate monochromatic light; and a photoelectric conversion region that has a p-n junction or p-i-n junction, absorbs the monochromatic light generated in the wavelength converting region to generate electrons and holes, and separates and moves the electrons and holes generated by absorption of the monochromatic light. The wavelength converting region includes: a carrier generating region that generates the electrons and holes; a light emitting region that generates the monochromatic light; and a carrier selective transfer region that is disposed between the carrier generating region and the light emitting region and that, of the electrons and holes generated in the carrier generating region, moves those electrons and holes having specific energies difference there between to the light emitting region.

Abstract: A photoelectric conversion device includes: a wavelength converting region that absorbs ambient light to generate electrons and holes, and recombines the generated electrons and holes to generate monochromatic light; and a photoelectric conversion region that has a p-n junction or p-i-n junction, absorbs the monochromatic light generated in the wavelength converting region to generate electrons and holes, and separates and moves the electrons and holes generated by absorption of the monochromatic light. The wavelength converting region includes: a carrier generating region that generates the electrons and holes; a light emitting region that generates the monochromatic light; and a carrier selective transfer region that is disposed between the carrier generating region and the light emitting region and that, of the electrons and holes generated in the carrier generating region, moves those electrons and holes having specific energies difference there between to the light emitting region.

Abstract: A method of fabricating a hot carrier energy conversion structure, and a hot carrier energy conversion structure. The method comprises forming an energy selective contact ESC comprising a tunnelling layer; forming a carrier generation layer on the ESC; and forming a semiconductor contact without a tunnelling layer on the carrier generation layer.

Abstract: A main object of the present invention is to provide a photoelectric conversion device which is capable of improving the photoelectric conversion efficiency. The invention comprises: a semiconductor; and a layer being disposed inside the semiconductor and having metal nanoparticles.

Abstract: The present invention provides a hot carrier type photovoltaic device capable of effectively improving conversion efficiency even when the residence time of carriers in a light absorbing layer is short. The photovoltaic device includes: a light absorbing layer that absorbs light and generates electrons and holes; an electron moving layer that is provided adjacent to one surface of the light absorbing layer; a hole moving layer that is provided adjacent to the other surface of the light absorbing layer; a negative electrode that is provided on the electron moving layer; and a positive electrode that is provided on the hole moving layer. The electron moving layer has a conduction band that has an energy gap narrower than that of a conduction band of the light absorbing layer and selectively transmits the electrons with a predetermined energy level.

Abstract: In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is larger in band gap than the semiconductor substrate and that contains an element causing a conductivity identical to or different from a conductivity of the semiconductor substrate is provided on a light-receiving surface side of the semiconductor substrate, and a diffusion layer is formed on a surface of the semiconductor substrate.

Abstract: In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is larger in band gap than the semiconductor substrate and that contains an element causing a conductivity identical to or different from a conductivity of the semiconductor substrate is provided on a light-receiving surface side of the semiconductor substrate, and a diffusion layer is formed on a surface of the semiconductor substrate.

Abstract: In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is larger in band gap than the semiconductor substrate and that contains an element causing a conductivity identical to or different from a conductivity of the semiconductor substrate is provided on a light-receiving surface side of the semiconductor substrate, and a diffusion layer is formed on a surface of the semiconductor substrate.

Abstract: A photovoltaic converter, maintaining the function of a protective film, simultaneously reducing the reflection loss and carrier recombination loss, and raising the power generation efficiency, formed on a semiconductor substrate and provided on its light receiving surface with a silicon nitride film as a protective film/antireflection film, wherein a content of hydrogen or a halogen is increased and a ratio of Si content/N content is increased at a boundary region of the silicon nitride film with the semiconductor substrate compared with other portions so as to maintain a refractive index at the boundary region equal to the other portions.

Abstract: In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is larger in band gap than the semiconductor substrate and that contains an element causing a conductivity identical to or different from a conductivity of the semiconductor substrate is provided on a light-receiving surface side of the semiconductor substrate, and a diffusion layer is formed on a surface of the semiconductor substrate.

Abstract: A nonlinear optical silica material mainly consisting of SiO2—GeO2 to which hydrogen or halogen element X is added. Oxygen bonded to Ge contained in the nonlinear optical silica material is replaced by H or X, and one Ge has two Ge—O bonds and one Ge—H (or Ge—X) bond at Ge· points where nonlinearity is exhibited in the silica material. The Ge—H (or Ge—X) bond does not relate to a crystal network, so that when the polarity is oriented in order to exhibit nonlinearity at Ge·, an electric field to be applied can be lowered, and when a optical semiconductor hybrid element or the like is produced, other portions of the semiconductor elements can be prevented from being broken or degraded in performance.

Abstract: A photovoltaic conversion device having a device structure which enables recombination loss of carriers at the surface to be reduced greatly and which thereby permits Ge to be used as the material suitable for TPV power generation application, and permits a back-face electrode type to be adopted as the electrode structure. This photovoltaic conversion device is comprised of a Ge substrate, a p-type semiconductor layer and a n-type semiconductor layer provided independently of each other on the back-face of the Ge substrate, a positive electrode and a negative electrode provided on the back-face side of the Ge substrate and connected to the p-type semiconductor layer and n-type semiconductor layer, respectively, and a protective film provided on the front face side of the Ge substrate.

Abstract: A solar cell that is capable of having a thickness optimum for the highest photoelectric conversion efficiency and achieves reduction of carrier recombination loss is provided. For this purpose, a solar cell (10) is formed by stacking a top cell (12) including an n.sup.+ layer, a p layer, and a p.sup.+ layer, and a bottom cell (14) including an n.sup.+ layer and a p.sup.+ layer arranged at the bottom of the p layer along the back surface. The top cell (12) has a band gap wider than that of the bottom cell (14). A top electrode (18) is formed at the n.sup.+ layer of the top cell (12), while a negative electrode (26) and a positive electrode (28) are individually connected to the n.sup.+ layer and the p.sup.+ layer of the bottom cell (14), respectively.

Abstract: In order to provide a converging solar module which achieves effective electricity generation, as well as significant reduction of costs and driving energy required to track the sun, a cell stage 20 carrying solar cells 16 is provided opposite to converging lenses 10. Some elastic members are provided between a pair of adjacent side edges of the cell stage 20 and corresponding side walls of a vessel 18. Along the other pair of side edges, stage driving bars 24 are provided. The stage driving bars 24 are moved horizontally by opening/closing operations of feeder valves X1, X2, Y1, Y2 and drain valves X3, X4, Y3, Y4 thereby moving the cell stage 20 horizontally in the direction perpendicular to the direction in which the stage driving bars 24 have moved. With an action of the elastic members 22 and the stage driving bars 24, the position of the cell stage 20 is adjusted such that the solar cells 16 thereon are brought into a position where converged spots 14 are formed.

Abstract: To provide a tracking-type solar module capable of high-performance sunlight-tracking with a simple configuration while simultaneously performing highly effective cooling of a solar cell, a solar cell is movably installed within a transparent cooling tube and is connected to a motor with a crank. A position detecting sensor is also installed inside the transparent cooling tube. Sunlight is refracted by a cooling medium filled inside the transparent cooling tube and is converged on the inner surface of the transparent cooling tube. The position detecting sensor detects the position at which sunlight is converged and the sunlight is tracked by the motor moving the solar cell to that position. Simultaneously, the cooling medium inside the transparent cooling tube directly cools the solar cell.

Abstract: The present invention discloses a converging type solar cell element able to restrain recombination of carriers and inflow of carriers into an embankment section and improve photoelectric conversion efficiency. A p.sup.+ diffusion layer 16 is formed on the surface of a sunlight receiving section 10 which is formed on a silicon substrate 12 comprising a p-type silicon. An energy gradient arises between the p.sup.+ diffusion layer 16 and the silicon substrate 12. Therefore, free electrons, which are minority carriers among the carriers generated in the silicon substrate 12 resulting from irradiation of sunlight to the sunlight receiving section 10, can be prevented from migrating to the surface side of the silicon substrate 12. Further, recombination of free electrons which may arise due to lattice defects of the surface can also be prevented. Still further, the p.sup.+ diffusion layer 16 may also be formed on a back surface side of the embankment section 14 which surrounds the sunlight receiving section 10.

Abstract: For a converging solar cell element capable of preventing excessive concentration of converged sunlight to one point without lowering the degree of light convergence, a p+ layer 14 and an n+ layer 12 are formed on the rear surface of a silicon substrate; a positive pole 16 and a negative pole 18 are formed in response to the respective layers; and, on the front surface side, a light receiving surface 24 is formed with a bank portion 28 which enhances intensity in the surrounding area. In the central portion of the light receiving surface 24, a projected portion 26 is formed, which scatters converged sunlight and prevents the concentration of converged sunlight to one point.

Abstract: In order to generate sufficient electricity in a small light converging solar module, a power generation solar cell is provided with four movement solar cells, situated around it. Below the respective movement solar cells, electromagnets are situated, connected to corresponding movement solar cells. The power generation solar cell, the movement solar cells, and the electromagnets are all mounted on a cell holder, around which a permanent magnet in the form of a ring is provided. When a converged spot moves its position from on the power generation solar cell to a position off the power generation solar cell, and onto one of the movement solar cells, electricity is supplied to the corresponding electromagnet, thereby moving the cell holder due to attracting forces generated between the electromagnet and the permanent magnet. After the cell holder is moved to such a point where the converged spot correctly falls on the power generation solar cell, the cell holder stops its movement.

Abstract: A photovoltaic photo-receptor includes a glass substrate, a transparent electrode, a plurality of photovoltaic layers which are sequentially laminated and formed and mainly composed of a-Si having photovoltaic functions, and a surface layer formed on the uppermost photovoltaic layer and composed of a-SiN. When a light image is irradiated from an LED array head, photovoltaic voltges are generated on the respective photovoltaic layers in accordance with the light image, whereby an electrostatic latent image having a potential which is established by adding the voltages generated at the respective photovoltaic layers is formed on the surface layer. A toner to which a developing bias is applied is supplied from a magnetic brush to be brought into contact with the surface layer of the photovoltaic photoreceptor, so that the electrostatic latent image is toner-developed. A toner image is transcribed onto a paper by a transcribing roller which is applied with a transferring bias.

Abstract: An electrostatic latent image member for use in an electrophotographic machine which can simultaneously perform such as charge not by a corona discharge, exposure, developing, cleaning, and the like, where a photosensitive unit including a photoconductive layer is laminated on a transparent supporting member, and the photosensitive unit which is added with an element for trapping an electric charge being injected in the vicinity of its surface can trap the electric charge being injected therein by a magnetic brush making contact with the outer surface of the photosensitive unit.