Abstract: To enhance the measurement sensitivity of a scanning probe microscope. In a cross sectional view, a cantilever includes a vertex portion that is a portion close to a sample and is covered by a metallic film, a ridge that is connected to the vertex portion and is covered by the metallic film, and an upper corner portion that is connected to the ridge. Here, the upper corner portion and a part of the ridge are portions to be irradiated with excitation light emitted from a light source of the scanning probe microscope.

Abstract: Provided is an adsorption member excellent in adsorption ability for a foulant having a relatively small molecular weight. The adsorption member includes a plurality of flow channels through which water to be treated passes, and partition walls that partition the flow channels from one another. The partition walls each include a porous ceramic substrate having a communication holes that allow the water to be treated to pass between the adjacent flow channels, and a layer made of particles of a metal oxide fixed to surfaces of the flow channels and surfaces of the communication holes. In the partition walls, a ratio (B/A) of a total pore specific surface area B of pores having a diameter of 6 nm or more and 10 nm or less as measured using a mercury intrusion method to a total pore specific surface area A of pores having a diameter of 1 nm or more and 100 nm or less as measured using a gas adsorption method is 49.3% or more.

Abstract: A machining center processes a section not to be corrected of a workpiece and a crankshaft bearing hole in a different position from the section not to be corrected and which is separated from an upper deck surface of the workpiece. The machining center supplies a coolant to the hole during processing and detects a temperature of the coolant. A control apparatus estimates the temperature of the coolant when a predetermined time elapses from a start of the processing to be a temperature of the workpiece, calculates a deformation amount of the workpiece due to thermal expansion, corrects a position of the hole with respect to the upper deck surface based on the deformation amount, and starts processing of the hole after the predetermined time. The predetermined time ends when a difference between a temperature near the hole and the temperature of the coolant falls within a predetermined range.

Abstract: To enhance the measurement sensitivity of a scanning probe microscope. In a cross sectional view, a cantilever includes a vertex portion that is a portion close to a sample and is covered by a metallic film, a ridge that is connected to the vertex portion and is covered by the metallic film, and an upper corner portion that is connected to the ridge. Here, the upper corner portion and a part of the ridge are portions to be irradiated with excitation light emitted from a light source of the scanning probe microscope.

Abstract: A surface treatment method of a metal member according to an embodiment of the invention includes removing an oily substance on the metal member by using gas-liquid two fluids that are obtained by boiling heated and pressured water under ordinary pressure. A surface treatment device of a metal member for removing an oily substance on the metal member includes self-generation two fluids production means for producing gas-liquid two fluids by boiling heated and pressured water under ordinary pressure, and a surface treatment room carrying out a surface treatment by bringing the self-generation two fluids into contact with the metal member.

Abstract: An apparatus having a vacuum vessel that has a mechanism using a lubricant therein and not causing defects and faults to samples introduced into the vacuum vessel even it is an apparatus where lubricating oil or grease is applied is provided. An apparatus having a vacuum vessel that has a mechanism using a lubricant therein such as CD-SEM, in which a lubricant (oil, grease) whose adsorption amount per minute to a surface of a material introduced into the vacuum vessel of an apparatus for evaluating a lubricant after the start of vacuum evacuation and after reaches a quasi-equilibrium state is below 0.09 ng/cm2 is employed.

Abstract: In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

Abstract: In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

Abstract: A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.

Abstract: In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

Abstract: In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

Abstract: A surface treatment method of a metal member according to an embodiment of the invention includes removing an oily substance on the metal member by using gas-liquid two fluids that are obtained by boiling heated and pressured water under ordinary pressure. A surface treatment device of a metal member for removing an oily substance on the metal member includes self-generation two fluids production means for producing gas-liquid two fluids by boiling heated and pressured water under ordinary pressure, and a surface treatment room carrying out a surface treatment by bringing the self-generation two fluids into contact with the metal member.

Abstract: A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.

Abstract: An object of this invention is to provide a charged particle beam apparatus that is capable of handling samples without adhering impurities onto the samples. In a scanning electron microscope in which a lubricant was coated on a sliding portion of a movable member that moves inside a vacuum chamber, a substance from which low molecular components were removed is used as the lubricant. It is thus possible to inhibit sample contamination and suppress the occurrence of defects in a process following measurement of the samples.

Abstract: An apparatus having a vacuum vessel that has a mechanism using a lubricant therein and not causing defects and faults to samples introduced into the vacuum vessel even it is an apparatus where lubricating oil or grease is applied is provided. An apparatus having a vacuum vessel that has a mechanism using a lubricant therein such as CD-SEM, in which a lubricant (oil, grease) whose adsorption amount per minute to a surface of a material introduced into the vacuum vessel of an apparatus for evaluating a lubricant after the start of vacuum evacuation and after reaches a quasi-equilibrium state is below 0.09 ng/cm2 is employed.

Abstract: In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

Abstract: An object of this invention is to provide a charged particle beam apparatus that is capable of handling samples without adhering impurities onto the samples. In a scanning electron microscope in which a lubricant was coated on a sliding portion of a movable member that moves inside a vacuum chamber, a substance from which low molecular components were removed is used as the lubricant. It is thus possible to inhibit sample contamination and suppress the occurrence of defects in a process following measurement of the samples.

Abstract: A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.

Abstract: A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.

Abstract: An object of this invention is to provide a charged particle beam apparatus that is capable of handling samples without adhering impurities onto the samples. In a scanning electron microscope in which a lubricant was coated on a sliding portion of a movable member that moves inside a vacuum chamber, a substance from which low molecular components were removed is used as the lubricant. It is thus possible to inhibit sample contamination and suppress the occurrence of defects in a process following measurement of the samples.