Patents by Inventor Tomonori Uchimaru

Tomonori Uchimaru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050238859
    Abstract: A metal member-buried ceramics article which can uniformalize adsorption force or adsorption force and distribution of temperature in plane, decrease pollution of a semiconductor wafer, and suppress warping of the whole body is provided. This article has a three layer structure comprising, between an upper layer 2 and a lower layer 3 composed of an AlN sintered body in the form of plate, an intermediate connecting layer 4 having a thickness of 0.5 to 10 mm composed of a sintered body of defatted AlN powder and a metal electrode 5 in contact with the inner surface of the upper layer or lower layer or a metal electrode in contact with the inner surface of the upper layer and a metal electric resistor in contact with the inner surface of the lower layer sandwiched between them, and has means for suppressing a stress remaining in sintering the defatted AlN powder.
    Type: Application
    Filed: March 10, 2005
    Publication date: October 27, 2005
    Inventors: Tomonori Uchimaru, Atsushi Arai, Shigeko Muramatsu, Shinichiro Aomura, Mitsuhiro Fujita, Susumu Kimijima, Keisuke Watanabe
  • Publication number: 20050227118
    Abstract: The present invention provides a plasma resistant member having a reinforced mechanical strength and being sufficiently durable to exposure to a low pressure high density plasma. At least the surface of the alumina based material is formed of an oxide or composite oxide layer of a group IIIA element via an intermediate layer. It is preferable in the construction of the plasma resistant member that the intermediate layer comprises 10 to 80% by weight of the oxide or composite oxide of the group IIIA element in the periodic table and 90 to 20% by weight of alumina. The intermediate layer may also comprise a course ceramic with a porosity of 0.2 to 5%. It is also desirable that at least one of the conditions such as a difference in the thermal shrinkage ratio at 1600 to 1900° C. of 3% or less is provided.
    Type: Application
    Filed: June 10, 2005
    Publication date: October 13, 2005
    Applicant: Toshiba Ceramics Co., Ltd.
    Inventors: Tomonori Uchimaru, Haruo Murayama, Takashi Tanaka, Keiji Morita, Akira Miyazaki
  • Publication number: 20030051811
    Abstract: The present invention provides a plasma resistant member having a reinforced mechanical strength and being sufficiently durable to exposure to a low pressure high density plasma. At least the surface of the alumina based material is formed of an oxide or composite oxide layer of a group IIIA element via an intermediate layer. It is preferable in the construction of the plasma resistant member that the intermediate layer comprises 10 to 80% by weight of the oxide or composite oxide of the group IIIA element in the periodic table and 90 to 20% by weight of alumina. The intermediate layer may also comprise a course ceramic with a porosity of 0.2 to 5%. It is also desirable that at least one of the conditions such as a difference in the thermal shrinkage ratio at 1600 to 1900° C. of 3% or less is provided.
    Type: Application
    Filed: March 29, 2002
    Publication date: March 20, 2003
    Applicant: Toshiba Ceramics Co., Ltd.
    Inventors: Tomonori Uchimaru, Haruo Murayama, Takashi Tanaka, Keiji Morita, Akira Miyazaki