Abstract: A substrate treatment method includes: performing a first heat treatment on a substrate on which a coating film of a metal-containing resist has been formed and subjected to an exposure treatment, to form the metal-containing resist into a precursor in an exposed region of the coating film; thereafter, performing a second heat treatment on the substrate to condense the metal-containing resist formed into the precursor in the exposed region of the coating film; and thereafter, performing a developing treatment on the substrate.

Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus which are effective in preventing pattern collapse of an uneven pattern. The substrate processing method according to an exemplary embodiment includes replacing a liquid in a recess of a substrate having an uneven pattern of a negative type resist including a metal formed on a surface of the substrate with a solid-state stiffener, and subjecting the substrate to a molecular weight reduction processing that reduces the number of intermolecular bonds contained in the solid-state stiffener while maintaining the solid-state stiffener in a solid state.

Abstract: A substrate processing apparatus for processing a substrate including a metal-containing resist film, includes: a heat treatment part configured to perform a heat treatment on the substrate having the film subjected to an exposing process; a developing process part configured to perform a developing process on the film of the substrate subjected to the heat treatment; and a gas contact part configured to bring the film into contact with an inert gas during a period after the exposing process and before the developing process.

Abstract: A heat treatment apparatus includes: a stage on which a substrate is placed and heated, the substrate including an exposed resist film formed on a surface of the substrate, and the exposed resist film exhibiting a change in solubility of an exposed portion or an unexposed portion in a liquid developer by reacting with water and being heated; a lifting mechanism configured to relatively raise and lower the substrate between a first position at which the substrate is placed on the stage and a second position which is spaced apart from the stage; and a gas supply configured to supply a first gas to the substrate located at the second position before moving to the first position, the first gas having a humidity higher than that of an atmosphere in which the stage is provided.

Abstract: A thermal treatment apparatus performs a thermal treatment on a metal-containing film formed on a substrate. The thermal treatment apparatus includes a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film. At the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.

Abstract: A thermal treatment apparatus that performs a thermal treatment on a metal-containing film formed on a substrate, includes: a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film, wherein at the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.