Abstract: A resin sheet according to the present disclosure includes an uncured product or semi-cured product of a thermosetting resin composition. A melt viscosity of the resin sheet is equal to or greater than 10 Pa·s and equal to or less than 2000 Pa·s when measured using a Koka flow tester under a measuring condition including 130° C. and 1 MPa and is equal to or greater than 6 Pa·s and equal to or less than 1200 Pa·s when measured using the Koka flow tester under a measuring condition including 130° C. and 4 MPa.

Abstract: A thermosetting resin composition contains an ethylene-propylene-diene copolymer (A), a terminal-modified polyphenylene ether compound (B), an inorganic filler (C), a styrene-based elastomer (D), and a fibrous filler (E).

Abstract: The thermosetting resin composition contains a radical polymerizable unsaturated compound and an organic radical compound.

Abstract: A multilayer printed wiring board has excellent high-frequency characteristics. The multilayer printed wiring board includes one or more conductive layers and one or more insulating layers. In the multilayer printed wiring board, the one or more conductive layers and the one or more insulating layers are alternately stacked. Each insulating layer of the one or more insulating layers includes one or more of a polyolefin resin layer, a fluororesin layer, a polyphenylene ether resin layer, a polyamideimide resin layer, and a polyimide resin layer. At least one insulating layer of the one or more insulating layers includes a polyolefin resin layer.

Abstract: A multilayer printed wiring board has excellent high-frequency characteristics. The multilayer printed wiring board includes one or more conductive layers and one or more insulating layers. In the multilayer printed wiring board, the one or more conductive layers and the one or more insulating layers are alternately stacked. Each insulating layer of the one or more insulating layers includes one or more of a polyolefin resin layer, a fluororesin layer, a polyphenylene ether resin layer, a polyamideimide resin layer, and a polyimide resin layer. At least one insulating layer of the one or more insulating layers includes a polyolefin resin layer.

Abstract: A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.

Abstract: A method of producing a polyamide includes (i) polycondensating a polyamide precursor containing a salt made from a dicarboxylic acid and a diamine under pressure in a pre-polymerization tank to obtain a prepolymer, and (ii) highly polymerizing the prepolymer with an extruder, wherein when the prepolymer in a molten state which is obtained in the step (i) is fed, by a pump, to the low-pressure extruder from the pre-polymerization tank through a discharge side pipe disposed downstream of the pump, the prepolymer is fed such that the length L [cm] of the discharge side pipe and the linear velocity of discharge v [cm/s] of the prepolymer by the pump satisfy the relationship expressed by the equation, 0.1 [s]?L/v<10 [s].

Abstract: A manufacturing method of a wiring board and a semiconductor device at low cost and by a simple process, without performing complicated steps many times is proposed. Furthermore, a manufacturing method of a wiring board at low cost and with fewer adverse effects on the environment, and a manufacturing method of a semiconductor device using the wiring board are proposed. A pattern of a conductive material is formed over a first substrate, a conductive film is formed over the pattern by an electrolytic plating process, the pattern and the conductive film are separated, an IC chip including at least one thin film transistor is formed over a second substrate, and the conductive film is electrically connected to the IC chip.

Abstract: In an antenna and a semiconductor device including the antenna, an object is to reduce the distance between electrodes of a capacitor as much as possible, reduce the area of the electrode of the capacitor as much as possible, and prevent the suppression of response sensitivity and a response range of the semiconductor device. The present invention relates to an antenna including an antenna coil provided over a first region of a base and a capacitor which uses a second region of the base as a dielectric body and which has electrodes provided for opposite planes of the second region of the base, wherein the second region of the base is thinner than the first region of the base, and also relates to a semiconductor device including the antenna.

Abstract: A method of producing a polyamide includes (i) polycondensating a polyamide precursor containing a salt made from a dicarboxylic acid and a diamine under pressure in a pre-polymerization tank to obtain a prepolymer, and (ii) highly polymerizing the prepolymer with an extruder, wherein when the prepolymer in a molten state which is obtained in the step (i) is fed, by a pump, to the low-pressure extruder from the pre-polymerization tank through a discharge side pipe disposed downstream of the pump, the prepolymer is fed such that the length L [cm] of the discharge side pipe and the linear velocity of discharge v [cm/s] of the prepolymer by the pump satisfy the relationship expressed by the equation, 0.1 [s]?L/v<10 [s].

Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.

Abstract: A method for manufacturing an electronic device comprising a terminal provided with a conductor which penetrates a cured prepreg is provided. At least one opening is formed in the prepreg. The prepreg is attached to a substrate over which an electronic element is formed so that the conductor included in the terminal overlaps with the opening. A conductive paste is provided in a region of the prepreg where the opening is provided. Part of the conductive paste flows into the opening to be in contact with the conductor included in the terminal. Then, heat treatment is performed so that the conductive paste and the prepreg are cured. In the process for manufacturing the terminal, it is not necessary to perform a step of forming an opening with a laser beam after the prepreg is cured. Thus, an adverse effect of a laser beam on the electronic element can be eliminated.

Abstract: In an antenna and a semiconductor device including the antenna, an object is to reduce the distance between electrodes of a capacitor as much as possible, reduce the area of the electrode of the capacitor as much as possible, and prevent the suppression of response sensitivity and a response range of the semiconductor device. The present invention relates to an antenna including an antenna coil provided over a first region of a base and a capacitor which uses a second region of the base as a dielectric body and which has electrodes provided for opposite planes of the second region of the base, wherein the second region of the base is thinner than the first region of the base, and also relates to a semiconductor device including the antenna.

Abstract: A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.

Abstract: In an antenna and a semiconductor device including the antenna, an object is to reduce the distance between electrodes of a capacitor as much as possible, reduce the area of the electrode of the capacitor as much as possible, and prevent the suppression of response sensitivity and a response range of the semiconductor device. The present invention relates to an antenna including an antenna coil provided over a first region of a base and a capacitor which uses a second region of the base as a dielectric body and which has electrodes provided for opposite planes of the second region of the base, wherein the second region of the base is thinner than the first region of the base, and also relates to a semiconductor device including the antenna.

Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.

Abstract: A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.

Abstract: It is an object of the present invention to minimize an electrode in a solar cell to minimize the solar cell. The present invention provides a method for manufacturing a solar cell comprising the steps of forming a first electrode layer over a substrate, forming a photoelectric conversion layer over the first electrode layer, forming an organic layer over the photoelectric conversion layer, forming an opening reaching the first electrode layer in the photoelectric conversion layer, and forming a second electrode layer by filling the opening with a conductive paste, wherein the organic layer modifies the surface of the photoelectric conversion layer and a contact angle between the conductive paste and the photoelectric conversion becomes greater. According to the present invention, wettability of a photoelectric conversion layer can be decreased by forming an organic layer on a surface of the photoelectric conversion layer. Thereby an electrode layer and an insulating isolation layer can be thinned.

Abstract: It is an object of the present invention to provide a method for forming a layer having functionality including a conductive layer and a colored layer and a flexible substrate having a layer having functionality with a high yield. Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight. After coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, after attaching an adhesive to the layer having functionality, the layer having functionality is peeled from the substrate. Further, after coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, an adhesive is attached to the layer having functionality. Thereafter, the layer having functionality is peeled from the substrate, and a flexible substrate is attached to the layer having functionality.

Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.