Abstract: The present invention relates to fusion proteins or protein complexes comprising a ligand binding moiety fused to a ligand moiety, wherein the ligand binding moiety comprises an IL-12 binding domain and a protease cleavage site that, when activated by cleavage by a protease, restores biological activity of the ligand moiety, wherein the ligand moiety is an IL-12 fusion protein. The invention also relates to a polypeptide representing a mutated p40 subunit of IL-12, and to an IL-12 fusion protein or a protein complex comprising the mutated p40 subunit. The invention also relates to anti-IL-12 binding molecule or anti-IL-12 binding molecule complex defined by its variable light and heavy chains. The invention also relates to polynucleotides encoding the fusion proteins or fusion protein complexes or polypeptides or binding molecules, to methods of producing same, to their uses and pharmaceutical compositions comprising same.

Abstract: The present invention is intended to provide a peptide that selectively binds to a metal surface. The present invention relates to a peptide consisting of an amino acid sequence as set forth in SEQ ID NO: 1, SEQ ID NO: 2, SEQ ID NO: 3, SEQ ID NO: 4, SEQ ID NO: 5, SEQ ID NO: 6, SEQ ID NO: 7, SEQ ID NO: 8, SEQ ID NO: 9, SEQ ID NO: 10, SEQ ID NO: 11, SEQ ID NO: 12, SEQ ID NO: 13, SEQ ID NO: 14, SEQ ID NO: 15, SEQ ID NO: 16, SEQ ID NO: 17, SEQ ID NO: 18, SEQ ID NO: 19, SEQ ID NO: 20, or SEQ ID NO: 21, or a peptide substantially identical to the aforementioned peptide, and a method for detecting a metal surface of a medical device, using these peptides.

Abstract: A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.

Abstract: A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.

Abstract: A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.

Abstract: A method of cleaning for removing metal compounds attached to a surface of a substrate, wherein the cleaning is conducted by supplying a supercritical fluid of carbon dioxide comprising at least one of triallylamine and tris(3-aminopropyl)amine to the surface of the substrate and a process for producing a semiconductor device using the method of cleaning are provided. In accordance with the method of cleaning and the method for producing a semiconductor device using the method, etching residues or polishing residues containing metal compounds are efficiently removed selectively from the electroconductive material forming the electroconductive layer. When the electroconductive layer is a wiring, an increase in resistance due to residual metal compounds can be suppressed, and an increase in the leak current due to diffusion of the metal from the metal compounds to the insulating film can be prevented. Therefore, reliability on the wiring is improved, and the yield of the semiconductor device can be increased.

Abstract: A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

Abstract: A method of cleaning for removing metal compounds attached to a surface of a substrate, wherein the cleaning is conducted by supplying a supercritical fluid of carbon dioxide comprising at least one of triallylamine and tris(3-aminopropyl)amine to the surface of the substrate and a process for producing a semiconductor device using the method of cleaning are provided. In accordance with the method of cleaning and the method for producing a semiconductor device using the method, etching residues or polishing residues containing metal compounds are efficiently removed selectively from the electroconductive material forming the electroconductive layer. When the electroconductive layer is a wiring, an increase in resistance due to residual metal compounds can be suppressed, and an increase in the leak current due to diffusion of the metal from the metal compounds to the insulating film can be prevented. Therefore, reliability on the wiring is improved, and the yield of the semiconductor device can be increased.

Abstract: A fine pattern is formed on a surface of a processing object without using photoresist. A wet etching for the processing object in an area to which ultraviolet light is applied is performed by bringing a solution in which nitrous oxide (N2O) is dissolved into contact with the processing object and applying the ultraviolet light to the solution in a vicinity of an area to the processing object other than portions shielded with a mask whereupon a light shielding pattern is formed.

Abstract: A substrate cleaning device includes a rotating table that rotatably holds a silicon substrate. A light irradiation device is capable of irradiating at least a portion of a surface of the held silicon substrate with light. A nozzle is capable of selectively supplying at least N2O water and a hydrofluoric acid solution onto the substrate. A control unit controls the supply of the light irradiation device and the nozzle and enables light irradiation by the light irradiation device when the N2O water is supplied onto the silicon substrate.

Abstract: An anisotropic etching agent composition for manufacturing of micro-structures of silicon comprising an alkali compound and hydroxylamines; an anisotropic etching method with the use of the etching agent composition. The alkali compound is preferably tetramethylammonium hydroxide, and the hydroxylamines is preferably at least one kind selected from the group consisting of hydroxylamine, hydroxylamine sulfate, hydroxylamine chloride, hydroxylamine oxalate, dimethyl hydroxylamine hydrochloride and hydroxylamine phosphate. An anisotropic etching property whose etching rate is different in crystal face orientation especially relating with etching technology with the use of manufacturing of micro-structures of silicon used as Micro Electro Mechanical Systems (MEMS) parts, semiconductor materials, etc is provided.

Abstract: A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

Abstract: Method of using a supercritical fluid to clean a substrate having a fine structure in which a cleaning process is carried out by immersing the substrate in supercritical carbon dioxide for a predetermined time, and foreign matter adhering to the substrate is removed. After this, a rinsing process is performed on the substrate by stopping the supplying of a tertiary amine compound and supplying only the supercritical carbon dioxide so that the supercritical carbon dioxide to which the tertiary amine compound has been added is replaced with pure supercritical carbon dioxide. Next, the supplying of the carbon dioxide is stopped and the supercritical carbon dioxide inside the processing chamber is discharged so that the temperature and pressure inside the processing chamber fall, resulting in the carbon dioxide inside the processing chamber being gasified and the substrate being supercritically dried.