Abstract: One or more embodiments of techniques or systems for vehicle-to-vehicle wireless charging are provided herein. A first vehicle may be equipped with a first vehicle-to-vehicle wireless charging system and a second vehicle may be equipped with a second vehicle-to-vehicle wireless charging system. The first vehicle may be placed in a charge providing mode and the second vehicle may be placed in a charge receiving mode. Respective vehicles may detect or monitor for hazards prior to, during, or after wireless charging. When hazards are detected, notifications may be provided to promote safety while wireless charging occurs. The first vehicle may be pulled alongside, in front of, or behind the second vehicle within a charging proximity to facilitate wireless charging. Control may be provided such that charging or starting the second vehicle is possible without exiting the first vehicle.

Abstract: An offboard power supply for a PHEV has an electric motor. A battery pack is coupled to the electric motor. An internal combustion engine (ICE) is coupled to the battery pack. An offboard power supply control module is coupled to the battery pack to direct power stored in the battery pack to an offboard electric power-consuming device coupled to the offboard power supply control module. A sensor module monitors emissions levels around the PHEV and allows for charging of the battery pack by the ICE when the emission levels around the PHEV are at or below a predetermined value.

Abstract: A first range, a second range, and a third range are determined for a state-of-charge associated with a battery. The second range is determined based on a first set of information. The third range is determined based on a second set of information different from the first set of information. A map including a first zone associated with the first range, a second zone associated with the second range, and a third zone associated with the third range is displayed.

Abstract: An adhesive or underfill composition includes: a polymer exclusively including at least one structural unit of Formula (1) as a repeating unit except a terminal: {R1 and R2 are each independently a hydrogen atom or a methyl group; X is a sulfonyl or divalent organic group of Formula (2): (R3 and R4 are each independently a hydrogen atom or methyl group; at least one hydrogen atom of the methyl group is optionally substituted by a halogen atom; and m is 0 or 1), and Y is a divalent organic group of Formula (3) or (4): (Z is a single bond, a methylene, sulfonyl, —O—, or a divalent organic group of Formula (2) where m is 0; R5 is a hydrogen atom, methyl, ethyl, or methoxy group; R6 is a methyl, vinyl, allyl, or phenyl group; and n is 0 or 1)}; and an organic solvent.

Abstract: A first range, a second range, and a third range are determined for a state-of-charge associated with a battery. The second range is determined based on a first set of information. The third range is determined based on a second set of information different from the first set of information. A map including a first zone associated with the first range, a second zone associated with the second range, and a third zone associated with the third range is displayed.

Abstract: There is provided a composition for forming a passivation film that satisfies electric insulation, heat-tolerance, solvent-tolerance, and a dry etch back property at the same time.

Abstract: Provided is a water addition plug for a storage battery, which is for carrying out water addition into a container of the storage battery. The water addition plug comprising a water addition plug main body having a water supply port through which the water is supplied, a water addition port through which the supplied water is discharged into the container, and a valve chest disposed between the water supply port and the water addition port and provided with a first valve and a second valve and a float that moves up and down following an electrolyte level in the container. The first valve comprises a first drain port, which is open to the valve chest and communicates with the water addition port, and a first valve element for closing the first drain port in synchronization with a vertical movement of the float. The second valve comprises a second drain port, which is open to the valve chest and communicates with the water addition port, and a second valve element for closing the second drain port.

Abstract: There is provided a novel polymer, a composition containing the polymer, and a novel adhesive composition containing the polymer from which a cured film having desired properties is obtained. A polymer comprising a structural unit of Formula (1): wherein Q is a bivalent group, R1 is a C1-10 alkylene group, a C2-10 alkenylene group or C2-10 alkynylene group, a C6-14 arylene group, a C4-10 cyclic alkylene group, etc., or a polymer comprising a structural unit of Formula (6): wherein Q4 is an allyl group, a vinyl group, an epoxy group, or a glycidyl group, and R5 is a bivalent organic group having a main chain containing only carbon atom or at least one of oxygen atom, nitrogen atom and sulfur atom in addition to carbon atom, a composition comprising the polymer, and an adhesive composition comprising the polymer and a solvent.

Abstract: There is provided a resist underlayer film forming composition for lithography, which in order to prevent a resist pattern from collapsing after development in accordance with the miniaturization of the resist pattern, is applied to multilayer film process by a thin film resist, has a lower dry etching rate than resists and semiconductor substrates, and has a satisfactory etching resistance relative to a substrate to be processed in the processing of the substrate. A resist underlayer film forming composition used in lithography process by a multiplayer film, comprises a polymer containing a unit structure having an aromatic fused ring, a unit structure having a protected carboxyl group or a unit structure having an oxy ring. A method of forming a pattern by use of the resist underlayer film forming composition. A method of manufacturing a semiconductor device by utilizing the method of forming a pattern.

Abstract: There is provided a resist underlayer film forming composition for an electron beam lithography that is used in a device production process using electron beam lithography and is effective for reducing adverse effects caused by an electron beam to obtain a favorable resist pattern, and a method of forming a resist pattern using the resist underlayer film forming composition for electron beam lithography. The resist underlayer film forming composition for an electron beam lithography comprises a polymer compound having a repeating unit structure that contains a halogen atom, and a solvent, and the composition is applied in a form of film between a film to be processed for forming a transferring pattern on a substrate and a resist film for an electron beam lithography, and used for manufacturing a semiconductor device. The polymer compound preferably contains at least 10% by mass of a halogen atom.

Abstract: There is provided an anti-reflective coating forming composition for use in a lithography of the manufacture of semiconductor devices and for forming an anti-reflective coating that can be developed with an alkaline developer for photoresist, and a method for forming photoresist pattern by use of the anti-reflective coating forming composition. The anti-reflective coating forming composition comprises a compound having at least two vinyl ether groups, an alkali-soluble compound having at least two phenolic hydroxy groups or carboxyl groups, a photoacid generator, and a solvent.

Abstract: An adhesive composition has a polymer that contains a unit structure of Formula (1): ?L1-O-T1-O???Formula (1) (where L1 is an arylene group or a combination of an arylene group and a sulfonyl group or a carbonyl group, and T1 is a fluoroalkylene group, a cyclic alkylene group, an arylene group having a substituent, or a combination of an arylene group optionally having a substituent and a fluoroalkylene group or a cyclic alkylene group) and contains, at a terminal or in a side chain or the main chain, at least one group containing a structure of Formula (2-A), a structure of Formula (2-B), or both structures:

Abstract: [Object] To provide a coating-type underlayer coating forming composition that is applied for multi-ply coating process by thin film resist in order to prevent collapse of resist pattern after development with miniaturization of resist pattern, and that shows a sufficient etching resistance against a semiconductor substrate to be processed on processing of the substrate by having a low dry etching rate compared with the photoresist and substrate. [Means for solving problems] A coating-type underlayer coating forming composition that is used for lithography process by multi-ply coating, comprising a polymer containing a vinylnaphthalene based structural unit and an acrylic acid based structural unit containing an aromatic hydroxy group or a hydroxy-containing ester. A coating-type underlayer coating forming composition further comprising an acrylic acid based structural unit containing an aliphatic cyclic compound-containing ester or an aromatic compound-containing ester.

Abstract: There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a polymer having a structural unit containing naphthalene ring substituted with halogen atom in a molar ratio of 0.3 or more in the structural units constituting the polymer, a solvent.

Abstract: There is provided a resist underlayer film forming composition for lithography, which in order to prevent a resist pattern from collapsing after development in accordance with the miniaturization of the resist pattern, is applied to multilayer film process by a thin film resist, has a lower dry etching rate than resists and semiconductor substrates, and has a satisfactory etching resistance relative to a substrate to be processed in the processing of the substrate. A resist underlayer film forming composition used in lithography process by a multiplayer film, comprises a polymer containing a unit structure having an aromatic fused ring, a unit structure having a protected carboxyl group or a unit structure having an oxy ring. A method of forming a pattern by use of the resist underlayer film forming composition. A method of manufacturing a semiconductor device by utilizing the method of forming a pattern.

Abstract: There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.

Abstract: A mask blank is equipped with a thin film that forms a mask pattern formed on a substrate and a chemically amplified type resist film that is formed above the thin film. In the mask blank, a protective film that prevents movement of a substance that inhibits a chemical amplification function of the resist film from a bottom portion of the resist film to inside the resist film is provided between the thin film and the resist film. The mask blank suppresses the error of the line width dimension of the transfer pattern formed on the substrate to the design dimension of the transfer pattern line width of the transfer mask (actual dimension error) and also suppress linearity up to 10 nm.

Abstract: To provide a coating-type underlayer coating forming composition containing a naphthalene resin derivative. A coating-type underlayer coating forming composition for lithography comprising a compound of formula (1): wherein A is an organic group having an aromatic group, R1 is hydroxy group, an alkyl group, an alkoxy group, a halogen group, a thiol group, an amino group or an amide group, m1 is the number of A substituted on the naphthalene ring and is an integer of 1 to 6, m2 is the number of R1 substituted on the naphthalene ring and is an integer of 0 to 5, a sum of m1 and m2 (m1+m2) is an integer of 1 to 6, in cases where the sum is an integer other than 6, the reminder is hydrogen atom, and n is the number of repeating units ranging from 2 to 7000.

Abstract: There is provided an anti-reflective coating forming composition for lithography comprising a reaction product obtained by reacting a sulfur-containing compound having thiourea structure with a nitrogen-containing compound having two or more nitrogen atoms substituted with a hydroxymethyl group or an alkoxymethyl group in the presence of an acid catalyst and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, has a higher dry etching rate compared with photoresists and can use in lithography process for manufacturing semiconductor device.

Abstract: There is provided a resist underlayer coating forming composition used in processes for manufacturing a mask blank and a mask, and a mask blank and a mask manufactured from the composition. The resist underlayer coating forming composition comprises a polymer compound having a halogen atom-containing repeating structural unit and a solvent. In a mask blank including a thin film for forming transfer pattern and a chemically-amplified type resist coating on a substrate in that order, the composition is used for forming a resist underlayer coating between the thin film for forming transfer pattern and the resist coating. The polymer compound is preferably a compound containing a halogen atom in an amount of at least 10 mass %.