Abstract: Provided is a composition having high affinity for the surface of an adhesive, and excellent long-term storage stability. This composition comprises: a quaternary alkylammonium fluoride or a hydrate of a quaternary alkylammonium fluoride; and an aprotic solvent, wherein the aprotic solvent includes (A) an N-substituted amide compound having 4 or more carbon atoms and not containing active hydrogen on a nitrogen atom, and (B) an ether compound.

Abstract: Provided is a decomposing/cleaning composition for an adhesive polymer having a high etching rate and suppressed infiltration into a contact interface between a substrate such as a device wafer and an adhesive layer such as a fixing tape. The decomposing/cleaning composition of one embodiment is a decomposing/cleaning composition for an adhesive polymer containing a quaternary alkylammonium fluoride or a quaternary alkylammonium fluoride hydrate and an aprotic solvent, wherein the aprotic solvent contains (A) an N-substituted amide compound having no active hydrogens on the nitrogen atoms and (B) at least one organic sulfur oxide selected from the group consisting of sulfoxide compounds and sulfone compounds.

Abstract: An etching method capable of controlling the etching rate of a silicon nitride layer and the etching rate of a silicon oxide layer to be approximately equal to each other. A body to be treated including a laminated film (5) having silicon oxide layers (2) and silicon nitride layers (3) laminated on top of each other is treated with an etching gas containing a halocarbon compound containing carbon, bromine, and fluorine. Then, the silicon oxide layer (2) and the silicon nitride layer (3) are etched at approximately equal etching rates.

Abstract: Provided is a composition having high affinity for the surface of an adhesive, and excellent long-term storage stability. This composition comprises: a quaternary alkylammonium fluoride or a hydrate of a quaternary alkylammonium fluoride; and an aprotic solvent, wherein the aprotic solvent includes (A) an N-substituted amide compound having 4 or more carbon atoms and not containing active hydrogen on a nitrogen atom, and (B) an ether compound.

Abstract: An etching method capable of controlling the etching rate of a silicon nitride layer and the etching rate of a silicon oxide layer to be approximately equal to each other. A body to be treated including a laminated film (5) having silicon oxide layers (2) and silicon nitride layers (3) laminated on top of each other is treated with an etching gas containing a halocarbon compound containing carbon, bromine, and fluorine. Then, the silicon oxide layer (2) and the silicon nitride layer (3) are etched at approximately equal etching rates.

Abstract: There is provided a flaky graphite containing boron, the flaky graphite containing boron having an average thickness of 100 nm or less and an average plate diameter dc of 0.01 to 100 ?m. There is also provided a conductive resin composition comprising a resin component and a carbon component comprising at least the flaky graphite containing boron, wherein the content of the carbon component based on 100 parts by mass of the resin component is 5 to 4000 parts by mass. There are also provided a conductive coating material and a conductive adhesive using the conductive resin composition.

Abstract: A process for producing a fluorine gas of the invention comprises a step (1) of generating a fluorine gas by sectioning the interior of a fluorine gas generation container equipped with a heating means, by the use of a structure having gas permeability, then filling each section with a high-valence metal fluoride and heating the high-valence metal fluoride. The process may comprise a step (2) of allowing the high-valence metal fluoride, from which a fluorine gas has been generated in the step (1), to occlude a fluorine gas. According to the process of the invention, a high-purity fluorine gas that is employable as an etching gas or a cleaning gas in the process for manufacturing semiconductors or liquid crystals can be produced inexpensively on a mass scale.

Abstract: Disclosed is a process for producing manganese fluoride, comprising a step (1) of allowing a manganese compound such as MnF2 having been dried at a temperature of not lower than 100° C. to react with a fluorinating agent such as F2 at a temperature of 50 to 250° C. and a step (2) of further allowing a product obtained in the step (1) to react with a fluorinating agent at a temperature of 250 to 450° C. According to this process, manganese fluoride capable of generating a fluorine gas can be easily and inexpensively produced on a mass scale under the conditions of low temperature and low pressure without going through steps of sublimation and solidification.

Abstract: A process for producing a fluorine gas of the invention comprises a step (1) of generating a fluorine gas by sectioning the interior of a fluorine gas generation container equipped with a heating means, by the use of a structure having gas permeability, then filling each section with a high-valence metal fluoride and heating the high-valence metal fluoride. The process may comprise a step (2) of allowing the high-valence metal fluoride, from which a fluorine gas has been generated in the step (1), to occlude a fluorine gas. According to the process of the invention, a high-purity fluorine gas that is employable as an etching gas or a cleaning gas in the process for manufacturing semiconductors or liquid crystals can be produced inexpensively on a mass scale.

Abstract: Disclosed is a process for producing manganese fluoride, comprising a step (1) of allowing a manganese compound such as MnF2 having been dried at a temperature of not lower than 100° C. to react with a fluorinating agent such as F2 at a temperature of 50 to 250° C. and a step (2) of further allowing a product obtained in the step (1) to react with a fluorinating agent at a temperature of 250 to 450° C. According to this process, manganese fluoride capable of generating a fluorine gas can be easily and inexpensively produced on a mass scale under the conditions of low temperature and low pressure without going through steps of sublimation and solidification.