Abstract: An anomaly detection device (IDS ECU) includes a detection rule generator that monitors a communication establishment frame flowing over Ethernet in a communication establishment phase of service-oriented communication and that generates, for each communication ID, a detection rule including the communication ID written in the communication establishment frame and a server (or client) address written in the communication establishment frame; an anomaly detector that monitors a communication frame flowing over the Ethernet in a communication phase of the service-oriented communication and that, by referring to a detection rule that includes a communication ID written in the communication frame, detects the communication frame as an anomalous frame when a server (or client) address written in the communication frame differs from a server (or client) address included in the detection rule; and an anomaly notifier that provides a notification of an anomaly in response to the anomalous frame being detected.

Abstract: The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: A monitoring device includes three or more monitors each monitoring, as a monitoring target, at least one of software and a communication log. The three or more monitors include a first monitor operating with a first execution privilege, a second monitor operating with a second execution privilege having a reliability level lower than the first execution privilege, and a third monitor operating with a third execution privilege having a reliability level that is the same as the second execution privilege or that is lower than the second execution privilege. The first monitor monitors software of the second monitor, and at least one of the first monitor or the second monitor monitors software of the third monitor.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: A computer provided with a camera analyzes an image obtained by imaging a target instrument by the camera, identifies a model of the target instrument, translates a display content of the target instrument, which is included in the image, based on a translation rule corresponding to the identified model, and notifies a user of a translation result.

Abstract: An unauthorized frame detection device that can keep an unauthorized ECU from spoofing as a legitimate server or client while suppressing an overhead during communication is provided. The unauthorized frame detection device includes a plurality of communication ports corresponding to the respective of networks, a communication controller, and an unauthorized frame detector. The plurality of communication ports are each connected to a corresponding predetermined network among the plurality of networks and each transmit or receive a frame via the predetermined network. The unauthorized frame detector determines whether an identifier of a service, a type of the service, and port information that are each included in the frame match a permission rule set in advance and outputs a result of the determination.

Abstract: A resist composition containing a resin component having a constitutional unit containing a phenolic hydroxyl group and a compound represented by General Formula (b0-1), in which the proportion of the constitutional unit in the resin component is more than 5% by mole and less than 45% by mole with respect to the total (100% by mole) of all constitutional units constituting the resin component.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: A shield-type connector includes: an inner shell made of metal and provided in an inner housing; an outer shell made of metal and provided in an outer housing; and a cover shell made of metal and contacting with both of the inner shell and the outer shell, in which the inner shell, the outer shell and the cover shell include contact portions that contact with each other, and the contact portion of the cover shell is inserted between the contact portion of the inner shell and the contact portion of the outer shell.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes two or more pixels. The pixels each include a photoelectric converter, a charge holding section, and a transfer transistor. The charge holding section holds electric charge transferred from the photoelectric converter. The transfer transistor transfers electric charge from the photoelectric converter to the charge holding section. The pixels each further include a light blocking section that is disposed in a layer between the photoelectric converter and the charge holding section. The light blocking section has an opening which a vertical gate runs through. The pixels each further include a charge blocking section that blocks transfer of electric charge to the transfer transistor via a region between an edge, of the opening, closer to the charge holding section and the vertical gate.

Abstract: The present technology relates to an imaging element that can increase the degree of freedom of element arrangement. A photoelectric conversion unit, a through trench penetrating a semiconductor substrate in a depth direction and formed between pixels each including the photoelectric conversion unit, and a PN junction region in a side wall of the trench are included, and the through trench has an opening portion, and a P-type region is formed in the opening portion. A photoelectric conversion unit, a holding unit, a through trench formed between the photoelectric conversion unit and the holding unit, and a PN junction region in a side wall of the through trench are included, and the through trench has an opening portion and a readout gate for reading the charge from the photoelectric conversion unit is formed in the opening portion. The present technology can be applied to, for example, an imaging element.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: A light-receiving device includes at least one pixel. The at least one pixel includes a first electrode; a second electrode; and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer is configured to convert incident infrared light into electric charge. The photoelectric conversion layer has a first section and a second section. The first section is closer to the first electrode than the second section, and the second section is closer to the second electrode than the first section. At least one of the first section and the second section have a plurality of surfaces.

Abstract: The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: A shield-type connector includes: an inner shell made of metal and provided in an inner housing; an outer shell made of metal and provided in an outer housing; and a cover shell made of metal and contacting with both of the inner shell and the outer shell, in which the inner shell, the outer shell and the cover shell include contact portions that contact with each other, and the contact portion of the cover shell is inserted between the contact portion of the inner shell and the contact portion of the outer shell.

Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: A liquid ejecting apparatus includes a liquid container and a control unit. The liquid container has an upper limit mark. The upper limit mark is arranged so that in a first case where an entire amount of liquid stored in a refilling container is injected into a storage portion when a notification unit notifies of a first state, a liquid level of the liquid in the storage portion is located between an inlet port and the upper limit mark, and in a second case where the entire amount of liquid stored in the refilling container is injected into the storage portion when the notification unit notifies of a second state, the liquid level overlaps with the upper limit mark.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: According to the present disclosure, there is provided an imaging device including: a first semiconductor layer (180) formed on a semiconductor substrate; a second semiconductor layer (170) formed on the first semiconductor layer (180) and having an opposite conductivity type to the first semiconductor layer (180); a pixel separation portion (150) configured to demarcate a pixel region including the first semiconductor layer (180) and the second semiconductor layer (170); a first electrode (130) connected to the first semiconductor layer (180) from one surface side of the semiconductor substrate; and a metal layer (152) connected to the second semiconductor layer (170) from a light irradiation surface side which is the other surface of the semiconductor substrate and buried in the pixel separation portion (150) in at least a part of the semiconductor substrate in a thickness direction.