Abstract: An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.

Abstract: On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength ?, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (?/n)×0.95 to (?/n)×1.

Abstract: An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.

Abstract: According to a method of manufacturing a semiconductor device of the present invention, a gate electrode is formed above a substrate, and a insulating film is formed above the gate electrode. Then, an amorphous semiconductor film is formed above the insulating film, laser annealing is performed on the amorphous semiconductor film, and the amorphous semiconductor film is changed to a crystalline semiconductor film. After that, hydrofluoric acid processing is performed on the crystalline semiconductor film, and an amorphous semiconductor film is formed above the crystalline semiconductor film where the hydrofluoric acid processing is performed so that pattern ends of the amorphous semiconductor film are arranged outside pattern ends of the crystalline semiconductor film and the amorphous semiconductor film contacts with the insulating film near the pattern ends.

Abstract: In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.

Abstract: On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength ?, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (?/n)×0.95 to (?/n)×1.

Abstract: According to a method of manufacturing a semiconductor device of the present invention, a gate electrode is formed above a substrate, and a insulating film is formed above the gate electrode. Then, an amorphous semiconductor film is formed above the insulating film, laser annealing is performed on the amorphous semiconductor film, and the amorphous semiconductor film is changed to a crystalline semiconductor film. After that, hydrofluoric acid processing is performed on the crystalline semiconductor film, and an amorphous semiconductor film is formed above the crystalline semiconductor film where the hydrofluoric acid processing is performed so that pattern ends of the amorphous semiconductor film are arranged outside pattern ends of the crystalline semiconductor film and the amorphous semiconductor film contacts with the insulating film near the pattern ends.

Abstract: In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.

Abstract: A display unit that includes a signal line provided over a substrate, a conductive film provided away from the signal line in a same layer as the signal line; a insulating base film provided over the signal line and conductive film, a polysilicon film provided over the insulating base film, an interlayer dielectric formed over the polysilicon film, a pixel electrode formed over the interlayer dielectric and a connection pattern formed away from the pixel electrode over the interlayer dielectric for connecting the polysilicon film with the signal line. A crystal grain size of the polysilicon having the conductive film formed in a lower portion is larger than a crystal grain size of the polysilicon film not having the conductive film in a lower portion.

Abstract: An organic electro luminescence element includes a substrate, an anode isolating film formed of an insulator on the substrate, an anode conductive layer formed on an upper surface of the substrate in an area partitioned by the anode isolating film, and an element isolating film formed of an insulator to enclose the anode isolating film and to be wider downward. Further, on the upper surface of the anode isolating film, a conductive film of the same type as the anode conductive layer is formed, which conductive layer is also covered by the element isolating film. Preferably, the anode isolating film has its upper surface made larger than the lower surface.

Abstract: An organic electro luminescence element includes a substrate, an anode isolating film formed of an insulator on the substrate, an anode conductive layer formed on an upper surface of the substrate in an area partitioned by the anode isolating film, and an element isolating film formed of an insulator to enclose the anode isolating film and to be wider downward. Further, on the upper surface of the anode isolating film, a conductive film of the same type as the anode conductive layer is formed, which conductive layer is also covered by the element isolating film. Preferably, the anode isolating film has its upper surface made larger than the lower surface.

Abstract: In a method for manufacturing a semiconductor device having a USG film 5 formed on a semiconductor substrate 1 in which an N+-type active region 2 and a P+-type active region 3 are formed, an oxide film 4 is formed on the semiconductor substrate 1 and the USG film 5 is formed on the oxide film 4. Because the influence of the characteristic difference of an underlying layer on the formation of the USG film 5 can be avoided due to the existence of the oxide film, the USG film 5 can be formed in a uniform thickness over regions including the semiconductor substrate 1, the P+-type active region 3 and the N+-type active region 2.

Abstract: In a method for manufacturing a semiconductor device having a USG film 5 formed on a semiconductor substrate 1 in which an N+-type active region 2 and a P+-type active region 3 are formed, an oxide film 4 is formed on the semiconductor substrate 1 and the USG film 5 is formed on the oxide film 4. Because the influence of the characteristic difference of an underlying layer on the formation of the USG film 5 can be avoided due to the existence of the oxide film, the USG film 5 can be formed in a uniform thickness over regions including the semiconductor substrate 1, the P+-type active region 3 and the N+-type active region 2.