Patents by Inventor Tomoyuki Kabasawa

Tomoyuki Kabasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tray for CVD and method for forming film using same
    Patent number: 8685855
    Abstract: A tray for film formation by a CVD method includes a tray main body (2) and a supporting member (3) mounted on the tray main body (2) for supporting a silicon wafer (5). The supporting member (3) has a holding portion (3c), on which the silicon wafer (5) is directly placed. The holding portion (3c) has its lower surface (3d) apart from a surface (2a) of the tray main body that is opposed to and apart from the supported silicon wafer (5), whereby the thickness distribution of an oxide film formed on the silicon wafer can be made uniform. The tray has a structure for reducing a contact area between the supporting member (3) and the tray main body (2), with the holding portion (3c) having a tilted surface with its inner circumferential side closer to the tray main body surface (2a) that is opposed to the silicon wafer.
    Type: Grant
    Filed: November 29, 2010
    Date of Patent: April 1, 2014
    Assignee: Sumco Corporation
    Inventors: Takashi Nakayama, Tomoyuki Kabasawa, Takayuki Kihara
  • TRAY FOR CVD AND METHOD FOR FORMING FILM USING SAME
    Publication number: 20120244703
    Abstract: A tray for film formation by a CVD method includes a tray main body (2) and a supporting member (3) mounted on the tray main body (2) for supporting a silicon wafer (5). The supporting member (3) has a holding portion (3c), on which the silicon wafer (5) is directly placed. The holding portion (3c) has its lower surface (3d) apart from a surface (2a) of the tray main body that is opposed to and apart from the supported silicon wafer (5), whereby the thickness distribution of an oxide film formed on the silicon wafer can be made uniform. The tray has a structure for reducing a contact area between the supporting member (3) and the tray main body (2), with the holding portion (3c) having a tilted surface with its inner circumferential side closer to the tray main body surface (2a) that is opposed to the silicon wafer.
    Type: Application
    Filed: November 29, 2010
    Publication date: September 27, 2012
    Applicant: SUMCO CORPORATION
    Inventors: Takashi Nakayama, Tomoyuki Kabasawa, Takayuki Kihara
  • Thin silicon wafer with high gettering ability and production method thereof
    Patent number: 7960253
    Abstract: In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 ?m and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5×107 precipitates/cm3.
    Type: Grant
    Filed: May 6, 2009
    Date of Patent: June 14, 2011
    Assignee: SUMCO Corporation
    Inventors: Takaaki Shiota, Takashi Nakayama, Tomoyuki Kabasawa
  • Silicon Wafer and Production Method Thereof
    Publication number: 20090278239
    Abstract: In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 ?m and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5×107 precipitates/cm3.
    Type: Application
    Filed: May 6, 2009
    Publication date: November 12, 2009
    Applicant: Sumco Corporation
    Inventors: Takaaki Shiota, Takashi Nakayama, Tomoyuki Kabasawa