Patents by Inventor Tomoyuki Kikutani
Tomoyuki Kikutani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7501663Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes: a substrate having a substrate surface oriented along a substrate surface plane; a first grown layer including a first grown layer conductivity type formed on the substrate; a masking layer formed on the first grown layer; a second grown layer of a second grown layer conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane; a first cladding layer including a first cladding layer conductivity type formed along at least a portion of the crystal surface plane; an active layer; and a second cladding layer including a second cladding layer conductivity type. At least one of the first cladding layer, the active layer, and the second cladding layer cover the masking layer surrounding the opening.Type: GrantFiled: November 9, 2006Date of Patent: March 10, 2009Assignee: Sony CorporationInventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Patent number: 7221001Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: GrantFiled: February 24, 2005Date of Patent: May 22, 2007Assignee: Sony CorporationInventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Publication number: 20070085087Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes: a substrate having a substrate surface oriented along a substrate surface plane; a first grown layer including a first grown layer conductivity type formed on the substrate; a masking layer formed on the first grown layer; a second grown layer of a second grown layer conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane; a first cladding layer including a first cladding layer conductivity type formed along at least a portion of the crystal surface plane; an active layer; and a second cladding layer including a second cladding layer conductivity type. At least one of the first cladding layer, the active layer, and the second cladding layer cover the masking layer surrounding the opening.Type: ApplicationFiled: November 9, 2006Publication date: April 19, 2007Applicant: Sony CorporationInventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Publication number: 20070077674Abstract: A process for producing a semiconductor light-emitting device is provided. The process includes providing a substrate including a substrate surface oriented along a substrate surface plane, forming a crystal seed layer on the substrate surface, forming a masking layer on the crystal seed layer, wherein the masking layer includes an opening, forming a crystal layer by selective growth of the crystal seed layer through the opening of the masking layer, wherein the crystal layer includes a crystal layer surface oriented along a crystal layer plane that diagonally intersects the substrate surface, and forming each of a first conductive layer, an active layer, and a second conductive layer along at least a portion of the crystal layer surface.Type: ApplicationFiled: November 9, 2006Publication date: April 5, 2007Applicant: Sony CorporationInventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Patent number: 7129107Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: GrantFiled: March 31, 2005Date of Patent: October 31, 2006Assignee: Sony CorporationInventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Patent number: 7129514Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: GrantFiled: March 31, 2005Date of Patent: October 31, 2006Assignee: Sony CorporationInventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Patent number: 7129515Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: GrantFiled: March 31, 2005Date of Patent: October 31, 2006Assignee: Sony CorporationInventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Patent number: 7122394Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: GrantFiled: March 30, 2005Date of Patent: October 17, 2006Assignee: Sony CorporationInventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Patent number: 7122826Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: GrantFiled: March 30, 2005Date of Patent: October 17, 2006Assignee: Sony CorporationInventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Patent number: 7122825Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: GrantFiled: March 30, 2005Date of Patent: October 17, 2006Assignee: Sony CorporationInventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Publication number: 20050179025Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: ApplicationFiled: March 30, 2005Publication date: August 18, 2005Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Publication number: 20050167677Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: ApplicationFiled: March 31, 2005Publication date: August 4, 2005Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Publication number: 20050170538Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: ApplicationFiled: March 30, 2005Publication date: August 4, 2005Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Publication number: 20050167675Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: ApplicationFiled: March 30, 2005Publication date: August 4, 2005Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Publication number: 20050167676Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: ApplicationFiled: March 31, 2005Publication date: August 4, 2005Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Publication number: 20050167678Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: ApplicationFiled: March 31, 2005Publication date: August 4, 2005Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Patent number: 6924500Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: GrantFiled: January 30, 2002Date of Patent: August 2, 2005Assignee: Sony CorporationInventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Publication number: 20050145859Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: ApplicationFiled: February 24, 2005Publication date: July 7, 2005Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Publication number: 20020117677Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.Type: ApplicationFiled: January 30, 2002Publication date: August 29, 2002Inventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani