Abstract: A method for fabricating a solar cell element, the method comprising a step (a) of preparing a laminate and a chamber, a step (b) of bringing the laminate into contact with the aqueous solution in such a manner that the second surface is immersed in the aqueous solution after the step (a); a step (c) of applying a voltage difference between an anode electrode and the laminate under an atmosphere of the inert gas to form a Zn layer on the second surface after the step (b); and a step (d) of exposing the Zn layer to oxygen so as to convert the Zn layer into a ZnO crystalline layer after the step (c).

Abstract: In order to provide a novel method for producing a chip having a water-repellent obverse surface and a hydrophilic reverse surface, the characteristic of the present disclosure lies in that the obverse surface of the chip having a hydroxyl group is brought into contact with an organic solvent in which R1—Si(OR2)3 or R1—SiY3 is dissolved in a second hydrophobic solvent, while the reverse surface of the chip is protected by the water film, so as to form a water-repellent film on the obverse surface of the chip.

Abstract: A solar cell element comprising a p-side electrode; a p-type group III-group V compound semiconductor layer; an n-type group III-group V compound semiconductor layer; an n-side group III-group V compound electrode layer; and a VxZn1-x layer. The p-side electrode is electrically connected to the p-type group III-group V compound semiconductor layer. The p-type group III-group V compound semiconductor layer, the n-type group III-group V compound semiconductor layer, the n-side group III-group V compound electrode layer, and the VxZn1-x layer are stacked in this order. The VxZn1-x layer is in contact with the n-side group III-group V compound electrode layer; x represents a value of not less than 0.3 and not more than 0.99; and the VxZn1-x layer has a thickness of not less than 1 nanometer and not more than 5 nanometers.

Abstract: A solar cell comprises an n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode layer, an n-side electrode; and a ZnO transparent electrode layer. The n-side electrode layer consists of AgxAu1-x, and x represents a value of not less than 0.1 and not more than 0.5. The ZnO transparent electrode layer is composed of a plurality of ZnO columnar particles and each ZnO columnar particle has a longitudinal direction substantially parallel to a normal line of the ZnO transparent electrode layer. The cross-sectional area of each ZnO columnar particles that appears by cutting the ZnO columnar particles perpendicularly to the longitudinal direction increases from the upper surface of the n-side electrode layer to the upper surface of the ZnO transparent electrode layer.

Abstract: A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.

Abstract: A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.

Abstract: A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.

Abstract: A fuel cell capable of operating under a high temperature environment and under a low humidity environment and a method for generating an electric power with use of the fuel cell. The fuel cell comprises an electrolyte membrane, an anode electrode, and an cathode electrode. In each of the anode electrode and the cathode electrode, a catalyst is held on a catalyst support, and an electrolyte covers the catalyst and the catalyst support. The cathode electrolyte is composed of SnO2, NH3, H2O, and H3PO4. A molar ratio X represented by X?NH3/SnO2 is not less than 0.2 and not more than 5, and a molar ratio Y represented by Y?P/Sn is not less than 1.6 and not more than 3.

Abstract: A fuel cell capable of operating under a high temperature environment and under a low humidity environment and a method for generating an electric power with use of the fuel cell. The fuel cell comprises an electrolyte membrane, an anode electrode, and an cathode electrode. In each of the anode electrode and the cathode electrode, a catalyst is held on a catalyst support, and an electrolyte covers the catalyst and the catalyst support. The cathode electrolyte is composed of SnO2, NH3, H2O, and H3PO4. A molar ratio X represented by X?NH3/SnO2 is not less than 0.2 and not more than 5, and a molar ratio Y represented by Y?P/Sn is not less than 1.6 and not more than 3.

Abstract: A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.

Abstract: A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of greater than 6.

Abstract: An object of the present invention is to provide a fuel cell that operates in a temperature range of not lower than 100° C., and a method for manufacturing such a fuel cell. The fuel cell of the present invention has a proton conductive gel, an anode electrode, and a cathode electrode, the proton conductor being sandwiched between the anode electrode and the cathode electrode, in which the proton conductive gel is composed of SnO2, NH3, H2O, and H3PO4, and provided that the molar ratio represented by NH3/SnO2 is X, and the molar ratio represented by P/Sn is Y, X is not less than 0.2 and not greater than 5, and Y is not less than 1.6 and not greater than 3.

Abstract: A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.

Abstract: The present invention provides thermoelectric elements, each of which can transfer heat efficiently to a heat source with a curved surface, such as a columnar heat source.

Abstract: An object of the present invention is to provide a fuel cell that operates in a temperature range of not lower than 100° C., and a method for manufacturing such a fuel cell. The fuel cell of the present invention has a proton conductive gel, an anode electrode, and a cathode electrode, the proton conductor being sandwiched between the anode electrode and the cathode electrode, in which the proton conductive gel is composed of SnO2, NH3, H2O, and H3PO4, and provided that the molar ratio represented by NH3/SnO2 is X, and the molar ratio represented by P/Sn is Y, X is not less than 0.2 and not greater than 5, and Y is not less than 1.6 and not greater than 3.