Abstract: The present invention provides an organic electroluminescence device capable of having not only a device lifetime comparable to that of an existing organic electroluminescence device but also a small thickness of smaller than 10 ?m and excellent flexibility. The present invention relates to an organic electroluminescence device having a structure including: an anode; a cathode on a substrate; and a laminate of multiple layers between the anode and the cathode, the device having a thickness of smaller than 10 ?m.

Abstract: A printing method and a printing device, in which printing quality can be maintained without increasing time necessary for printing even if resolution is enhanced. In the printing method, a reference signal is sent at intervals shorter than a minimum time interval at which an ink head provided with plural nozzles can eject ink, at least two reference signals set longer than the minimum time interval are counted as one count, the ink is ejected every one count, and a print pattern is formed by collectivity of the ejected ink. At least a final one count used to form the print pattern is adjusted so as to be lengthened by one or plural reference signals, and the ink is ejected every one count.

Abstract: A printing method and a printing device, in which printing quality can be maintained without increasing time necessary for printing even if resolution is enhanced. In the printing method, a reference signal is sent at intervals shorter than a minimum time interval at which an ink head provided with plural nozzles can eject ink, at least two reference signals set longer than the minimum time interval are counted as one count, the ink is ejected every one count, and a print pattern is formed by collectivity of the ejected ink. At least a final one count used to form the print pattern is adjusted so as to be lengthened by one or plural reference signals, and the ink is ejected every one count.

Abstract: A first polysilicon layer is formed on a substrate, and vacancies are introduced into an upper portion of the first polysilicon layer, thereby forming a second polysilicon layer. Then, a third polysilicon layer is formed on the second polysilicon layer. After depositing a silicon oxide film and a polysilicon film for a gate on the third polysilicon layer, these films are made into a pattern, thereby forming a control gate electrode and a gate oxide film. Impurity ions are then implanted, thereby forming source/drain regions. Thus, a channel region including the second polysilicon layer with the vacancies introduced is disposed below the control gate electrode, and hence, the mobility of a carrier in the channel region can be improved. As a result, a device can be operated at a high speed with a low voltage.

Abstract: A non-volatile memory cell according to the present invention includes: a semiconductor layer of a first conductivity type having an upper portion; a pair of impurity diffusion regions of a second conductivity type provided in the upper portion of the semiconductor layer, facing each other at a certain distance; a channel region provided between the pair of impurity diffusion regions in the upper portion of the semiconductor layer; a gate insulating film provided on the upper portion of the semiconductor layer, having thin portions covering at least part of the pair of impurity diffusion regions and a thick portion covering the channel region; floating gate electrodes provided on the thin portions of the gate insulating film; a control gate electrode provided on the thick portion of the gate insulating film and electrically insulated from the floating gate electrodes; and an insulating film provided between the control gate electrode and the floating gate electrodes, capacity-coupling the control gate electro