Abstract: A device embedded substrate (20), includes: an insulation layer (12) including an insulation resin material; an electric or electronic device (4) embedded in the insulation layer (12); a terminal (15) serving as an electrode included in the device (4); a conductor pattern (18) formed on the surface of the insulation layer (12); and a conducting via (21) for electrically connecting the conductor pattern (18) and the terminals (15) with each other. The conducting via (21) is made up of a large-diameter section (21a) having a large diameter and a small-diameter section (21b) having a smaller diameter than that of the large-diameter section (21a), in order starting from the conductor pattern (18) toward the terminal (15). A stepped section (17) is formed between the large-diameter section (21a) and the small-diameter section (21b). The large-diameter section (21a) is formed so as to penetrate a sheet-shaped glass cloth (11) disposed in the insulation layer (12).

Abstract: There is provided a wafer boat support table that supports a wafer boat having a plurality of posts from below, the plurality of posts being configured to arrange and support a plurality of wafers at intervals in a vertical direction, the wafer boat support table including: a plurality of support points installed on each of linear lines defined by connecting a center of the wafer boat and the plurality of posts and configured to support a bottom surface of the wafer boat while being brought into contact with the bottom surface of the wafer boat.

Abstract: A substrate processing apparatus includes: a substrate holder which holds a plurality of substrates; a processing vessel including an inner tube and an outer tube disposed outside the inner tube; a gas supply part which supplies a process gas in parallel to target surfaces of the substrates; an exhaust part which exhausts the process gas from the processing vessel through a gas outlet; an exhaust port formed in the inner tube; and a rectifying plate installed in an outer wall of the inner tube or an inner wall of the outer tube between the exhaust port and the gas outlet in a circumferential direction of the processing vessel. The rectifying plate is installed to extend upward from a position below a lower end of the substrate holder to a location corresponding at least to a lower end of the exhaust port.

Abstract: Provided is a method of forming a film including a silicon film on a base, including: forming a seed layer on a surface of the base by heating the base and supplying an aminosilane-based gas onto the surface of the heated base; and forming the silicon film on the seed layer by heating the base and supplying a silane-based gas containing no amino group onto the seed layer of the surface of the heated base, wherein a molecule of the aminosilane-based gas used in forming a seed layer comprises two or more silicon atoms.

Abstract: Provided is a method of forming a seed layer as a seed of a thin film on an underlayer, which includes: forming a first seed layer on a surface of the underlayer by heating the underlayer, followed by supplying an aminosilane-based gas onto the surface of the heated underlayer; and forming a second seed layer on the surface of the underlayer with the first seed layer formed thereon by heating the underlayer, followed by supplying a disilane or higher order silane-based gas onto the surface of the heated underlayer.

Abstract: A message sequence generation method and a message sequence generation device, by which a message sequence with an error handling added thereto can be efficiently generated. The method includes setting an action for a specific phenomenon in the phenomenon causal relationship model, associating each element included in the message sequence information with each phenomenon to generate element/phenomenon correspondence information, storing the element/phenomenon correspondence information into a memory device, and acquiring the action set for the phenomenon corresponding to each element and the action set for another phenomenon caused by the phenomenon, from the element/phenomenon correspondence information, and adding the actions to the element as an error handling.

Abstract: A device embedded substrate (20), includes: an insulation layer (12) including an insulation resin material; an electric or electronic device (4) embedded in the insulation layer (12); a terminal (15) serving as an electrode included in the device (4); a conductor pattern (18) formed on the surface of the insulation layer (12); and a conducting via (21) for electrically connecting the conductor pattern (18) and the terminals (15) with each other. The conducting via (21) is made up of a large-diameter section (21a) having a large diameter and a small-diameter section (21b) having a smaller diameter than that of the large-diameter section (21a), in order starting from the conductor pattern (18) toward the terminal (15). A stepped section (17) is formed between the large-diameter section (21a) and the small-diameter section (21b). The large-diameter section (21a) is formed so as to penetrate a sheet-shaped glass cloth (11) disposed in the insulation layer (12).

Abstract: Provided is a method of forming a seed layer as a seed of a thin film on an underlayer, which includes: forming a first seed layer on a surface of the underlayer by heating the underlayer, followed by supplying an aminosilane-based gas onto the surface of the heated underlayer; and forming a second seed layer on the surface of the underlayer with the first seed layer formed thereon by heating the underlayer, followed by supplying a disilane or higher order silane-based gas onto the surface of the heated underlayer.

Abstract: Provided is a method of forming a film including a silicon film on a base, including: forming a seed layer on a surface of the base by heating the base and supplying an aminosilane-based gas onto the surface of the heated base; and forming the silicon film on the seed layer by heating the base and supplying a silane-based gas containing no amino group onto the seed layer of the surface of the heated base, wherein a molecule of the aminosilane-based gas used in forming a seed layer comprises two or more silicon atoms.

Abstract: A message sequence generation method and a message sequence generation device, by which a message sequence with an error handling added thereto can be efficiently generated. The method includes setting an action for a specific phenomenon in the phenomenon causal relationship model, associating each element included in the message sequence information with each phenomenon to generate element/phenomenon correspondence information, storing the element/phenomenon correspondence information into a memory device, and acquiring the action set for the phenomenon corresponding to each element and the action set for another phenomenon caused by the phenomenon, from the element/phenomenon correspondence information, and adding the actions to the element as an error handling.

Abstract: A joint member that includes a cylindrical sleeve member having a first outer diameter portion having a first outer diameter and a second outer diameter portion having a second outer diameter smaller than the first outer diameter. The joint member further includes a cylindrical nut member having an inner peripheral surface on which a first thread is formed and a bottom in which an opening is formed. The joint member further includes a limit member fixed to an outer periphery portion of the second outer diameter portion inserted into the opening and in contact with an outer surface of the bottom of the cylindrical nut member.