Patents by Inventor Tomoyuki Nouda

Tomoyuki Nouda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device
    Patent number: 6281057
    Abstract: A method is obtained of manufacturing a semiconductor device including a semiconductor layer with high field-effect mobility. According to the semiconductor device manufacturing method, a semiconductor layer is formed on a substrate and then the semiconductor layer is irradiated with high energy beam. Then, a heat treatment is provided under a temperature condition capable of reducing the surface roughness of the semiconductor layer. The radiation of high energy beam toward the semiconductor layer improves the crystalinity of the semiconductor layer and the subsequent heat treatment reduces the surface roughness of the semiconductor layer to enhance the field-effect mobility of the semiconductor layer.
    Type: Grant
    Filed: January 9, 1998
    Date of Patent: August 28, 2001
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Yoichiro Aya, Tomoyuki Nouda, Yasuo Nakahara, Naoya Sotani, Hisashi Abe, Hiroki Hamada
  • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20010003659
    Abstract: A method is obtained of manufacturing a semiconductor device including a semiconductor layer with high field-effect mobility. According to the semiconductor device manufacturing method, a semiconductor layer is formed on a substrate and then the semiconductor layer is irradiated with high energy beam. Then, a heat treatment is provided under a temperature condition capable of reducing the surface roughness of the semiconductor layer. The radiation of high energy beam toward the semiconductor layer improves the crystalinity of the semiconductor layer and the subsequent heat treatment reduces the surface roughness of the semiconductor layer to enhance the field-effect mobility of the semiconductor layer.
    Type: Application
    Filed: January 9, 1998
    Publication date: June 14, 2001
    Inventors: YOICHIRO AYA, TOMOYUKI NOUDA, YOSUO NAKAHARA, NAOYA SOTANI, HISASHI ABE, HIROKI HAMADA