Abstract: A packet transmission method, device, and system are disclosed, and pertain to the field of network technologies. The system includes a first network device in a VPLS network and a second network device in a VPWS network. The first network device determines, based on a destination address carried in a received first packet, a virtual port corresponding to the destination address in a VPLS instance of the first network device, and sends the first packet to a second VPWS instance in the second network device based on the virtual port, where the virtual port is used to indicate a first VPWS instance in the first network device, and the second VPWS instance and the first VPWS instance are VPWS instances used to bear a same service.

Abstract: A heat sink assembly includes a fixing base and a heat sink mounted on the fixing base. The fixing base has a bottom face attached to an electronic component mounted on a printed circuit board. The fixing base includes a pair of hooks extending from a rear side thereof and engaging with a support beam fixed to the printed circuit board. A pair of sleeves extend from a front side of the fixing base and two fasteners are received in the sleeves and threadedly engage with the printed circuit board. The rear and front sides of the fixing base are firmly secured to the printed circuit board, whereby the heat sink mounted on the fixing base can dissipate heat from the electronic component via the fixing base.

Abstract: A heat sink clip (100) includes a spring member (10), a moveable locking member (20) and an actuating member (30). The spring member includes an elongated main body (11) and a first locking leg (14) connecting at one end of the main body. The locking member is coupled at the other end of the main body, including an engaging plate (22) and a second locking leg (26) extending from the engaging plate. The actuating member includes a handle (32) and an extension portion (34) formed at one end of the handle. The handle and the extension portion form an angle therebetween. The extension portion is operatively engageable with the engaging plate of the locking member.

Abstract: A heat sink assembly includes a fixing base and a heat sink mounted on the fixing base. The fixing base has a bottom face attached to an electronic component mounted on a printed circuit board. The fixing base includes a pair of hooks extending from a rear side thereof and engaging with a support beam fixed to the printed circuit board. A pair of sleeves extend from a front side of the fixing base and two fasteners are received in the sleeves and threadedly engage with the printed circuit board. The rear and front sides of the fixing base are firmly secured to the printed circuit board, whereby the heat sink mounted on the fixing base can dissipate heat from the electronic component via the fixing base.

Abstract: A heat dissipating apparatus (10) includes a base (20), a plurality of stacked fins (30), and at least a heat pipe (40). The base absorbs heat from a heat-generating component. Each of the fins includes a main body (32), and a plurality of projection members (33) extending from the main body. The projection members of a first fin connect the projection members of a second fin. The projection members form a first heat transfer path for transferring heat from the base to the fins. The heat pipe includes a heat-absorbing portion (42) thermally contacting with the base, and a heat-dissipating portion (44) contacting with the fins. The heat pipe forms a second heat transfer path for transferring the heat from the base toward the fins.

Abstract: A heat dissipating apparatus (10) includes a plurality of fins (20) stacked together along a predetermined direction, and a plurality of projection members (23) extending from each fin. Each of the fins includes a main body (22). The main bodies of two adjacent fins define an air passage (29) therebetween. The projection members of a first fin abut against the main body of a second fin, for dividing the air passage into a plurality of small air channels.

Abstract: An assembly includes an electronic product (40), and a packaging box (10) for enclosing the electronic product therein. The packaging box includes a casing (12) and a cover (14). The casing includes a base wall (124) and four sidewalls (120, 121, 122, 123) disposed around the base wall. An accommodating space (125) is defined between the base wall and the sidewalls for enclosing an electronic product therein. Two opposite first sidewalls (120, 121) of the casing have two side plates (16) pivotably extending therefrom. The side plates include a plurality of projections (162, 164) extending towards the accommodating space for cushioning the electronic product. The cover is pivotably extended from a second sidewall (123) connected with the first sidewalls of the casing and covers the accommodating space.

Abstract: A heat sink clip (100) includes a spring member (10), a moveable locking member (20) and an actuating member (30). The spring member includes an elongated main body (11) and a first locking leg (14) connecting at one end of the main body. The locking member is coupled at the other end of the main body, including an engaging plate (22) and a second locking leg (26) extending from the engaging plate. The actuating member includes a handle (32) and an extension portion (34) formed at one end of the handle. The handle and the extension portion form an angle therebetween. The extension portion is operatively engageable with the engaging plate of the locking member.

Abstract: A heat dissipating apparatus (10) includes a base (20), a plurality of stacked fins (30), and at least a heat pipe (40). The base absorbs heat from a heat-generating component. Each of the fins includes a main body (32), and a plurality of projection members (33) extending from the main body. The projection members of a first fin connect the projection members of a second fin. The projection members form a first heat transfer path for transferring heat from the base to the fins. The heat pipe includes a heat-absorbing portion (42) thermally contacting with the base, and a heat-dissipating portion (44) contacting with the fins. The heat pipe forms a second heat transfer path for transferring the heat from the base toward the fins.

Abstract: A heat dissipating apparatus (10) includes a plurality of fins (20) stacked together along a predetermined direction, and a plurality of projection members (23) extending from each fin. Each of the fins includes a main body (22). The main bodies of two adjacent fins define an air passage (29) therebetween. The projection members of a first fin abut against the main body of a second fin, for dividing the air passage into a plurality of small air channels.

Abstract: A substrate cassette having a conventional form, an open container having an upper entrance and a narrow lower opening formed by two side panels and two end panels. A preferred embodiment includes a train of substrate alignment channels on the inner surfaces of the two side panels, each channel is U shaped and having planar surface with a left surface, a right surface, and a bottom surface. An arcuate curbing member disposed on a left surface in each of the substrate alignment channels. The arcuate curbing member includes a top end with a thinner sloped profile facing the upper open entrance of the cassette allowing a substrate to slide through and under a stepped lower end.

Abstract: The present invention provides polypeptides which are up- or down-regulated in pancreatic cancer and which can be used as markers for diagnosis of pancreatic cancer. The invention also provides an in vitro method for the diagnosis of pancreatic cancer and/or the susceptibility to pancreatic cancer comprising the steps of a) obtaining a biological sample; and b) detecting and/or measuring the increase of one or more polypeptides as disclosed herein. Furthermore, screening methods relating to inhibitors and antagonists of the specific polypeptides disclosed herein are provided.

Abstract: An improved and new process for fabricating a planarized structure of shallow trench isolation (STI) embedded in a silicon substrate has been developed. The planarizing method comprises a two-step CMP process in which the first CMP step comprises chemical-mechanical polishing of silicon oxide using a first polishing slurry which is selective to silicon oxide. The time of the second CMP step is determined by selecting an overpolish thickness based on the percentage of substrate area occupied by the trench. High manufacturing yield and superior planarity for silicon oxide STI are achieved.

Abstract: An improved composite dielectric structure and method of forming thereof which prevents delamination of FSG (F-doped SiO2) and allows FSG to be used as the interlevel dielectric between successive conducting interconnection patterns in multilevel integrated circuit structures has been developed. The composite dielectric structure comprises FSG, undoped silicon oxide (optional), silicon-rich silicon oxide and silicon nitride. The silicon-rich silicon oxide layer having a thickness between about 1000 and 2000 Angstroms prevents reaction of F atoms from the FSG layer with the silicon nitride layer during subsequent manufacturing heat treatment cycles and prevents the deleterious formation of delamination bubbles which cause peeling of the FSG layer.

Abstract: A cobalt silicide process having a titanium-rich/titanium nitride capping layer to improve junction leakage is described. Semiconductor device structures to be silicided are formed in and on a semiconductor substrate. A cobalt layer is deposited overlying the semiconductor device structures. A titanium-rich/titanium nitride capping layer is deposited overlying the cobalt layer. Thereafter, a cobalt silicide layer is formed on the semiconductor device structures. The titanium-rich/titanium nitride capping layer and an unreacted portion of the cobalt layer are removed to complete fabrication of the integrated circuit device.

Abstract: A process for preparing a surface of a lower level metal structure, exposed at the bottom of a sub-micron diameter opening, to allow a low resistance interface to be obtained when overlaid with an upper level metal structure, has been developed. A disposable, capping insulator layer is first deposited on the composite insulator layer in which the sub-micron diameter opening will be defined in, to protect underlying components of the composite insulator from a subsequent metal pre-metal procedure. After anisotropically defining the sub-micron diameter opening in the capping insulator, and composite insulator layers, and after removal of the defining photoresist shape, an argon sputtering procedure is used to remove native oxide from the surface of the lower level metal structure. In addition to native oxide removal the argon sputtering procedure, featuring a negative DC bias applied to the substrate, also removes the capping insulator layer from the top surface of the composite insulator layer.

Abstract: A new method is provided for the creation of layers of dielectric that are used for metal stack interconnect layers where the metal stack exceeds five layers. A stack of five layers of metal interconnect lines contains one layer of Intra Metal dielectric (ILD) and four layers of Inter Metal dielectric (IMD). One or more of the layers of IMD can be formed in the conventional method. One or more of the layers of IMD can be formed in the conventional method after which a layer of high compressive PECVD is deposited over this one or more layers of IMD. The layer of high compressive PECVD provides a crack resistant film that eliminates the formation of cracks in the surface of the IMD.

Abstract: A multi-step chemical-mechanical polishing method for improving tungsten chemical-mechanical polishing (CMP) process is provided in the present invention. The method comprises following steps. First, a wafer is placed on a first pad of a CMP system, wherein a head fixes the wafer on the first pad. Then, the head is rotated and the wafer is polished on the first pad by using a tungsten slurry. Next, the wafer is transferred to place on a second pad of the CMP system, wherein the head fixes the wafer on the second pad. Following, the head is rotated and the wafer is polished on the second pad by using the tungsten slurry. Then, the wafer is cleaned on the second pad by using a de-ionic water. Next, the wafer is transferred to place on a third pad of the CMP system, wherein the head fixes the wafer on the third pad. Following, the wafer is cleaned on the third pad by using the de-ionic water.

Abstract: A method to prevent the accumulation of particle impurities on the surface of a semiconductor substrate that contains wolfram plugs during the process of polishing the surface of the wafer. The polishing sequence consists of three distinct polishing steps whereby the first two steps use hard polishing pads while the third step uses a soft polishing pad with the application of slurry during the third polish.