Patents by Inventor Tongsung KIM

Tongsung KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220044741
    Abstract: A nonvolatile memory device includes a first memory chip and a second memory chip connected to a controller through the same channel. The first memory chip generates a first signal from a first internal clock signal based on a clock signal received from the controller. The second memory chip generates a second signal from a second internal clock signal based on the clock signal, and performs a phase calibration operation on the second signal on the basis of a phase of the first signal by delaying the second internal clock signal based on a phase difference between the first and second signals.
    Type: Application
    Filed: March 11, 2021
    Publication date: February 10, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Tongsung KIM, Youngmin JO, Chiweon YOON
  • Publication number: 20210359684
    Abstract: An impedance calibration circuit includes a first code generation circuit connected to a first reference resistor, and configured to generate a first code for forming a resistance based on the first reference resistor, by using the first reference resistor; a second code generation circuit configured to form a resistance of a second reference resistor less than the resistance of the first reference resistor, based on the first code, and generate a second code by using the second reference resistor; and a target impedance code generation circuit configured to generate a target impedance code based on the first code, the second code, and a target impedance value, and form an impedance having the target impedance value in a termination driver connected to the impedance calibration circuit, based on the target impedance code.
    Type: Application
    Filed: July 29, 2021
    Publication date: November 18, 2021
    Inventors: Tongsung KIM, Youngmin JO, Jungjune PARK, Jindo BYUN, Dongho SHIN, Jeongdon IHM
  • Publication number: 20210349660
    Abstract: A storage device includes NVM package and a controller connected to the NVM package through a channel and controlling operation of the NVM package. The NVM package includes an interface chip, first NVM devices connected to the interface chip through a first internal channel and second NVM devices connected to the interface chip through a second internal channel. The interface chip selects the first internal channel in response to an operation request received from the controller and connects the first internal channel to the channel. The interface chip also determines whether retraining is necessary in relation to the second internal channel and transmits a retraining request to the controller when retraining is necessary.
    Type: Application
    Filed: September 24, 2020
    Publication date: November 11, 2021
    Inventors: TONGSUNG KIM, JANGWOO LEE, SEONKYOO LEE, CHIWEON YOON, JEONGDON IHM
  • Patent number: 11163453
    Abstract: A memory device comprises a smart buffer, and a memory area divided into a first memory area and a second memory area, wherein the smart buffer comprises a priority setting unit configured to receive a sensing data and a corresponding weight from a controller, determine a priority of the sensing data based on the weight, and classify the sensing data as one of first priority sensing data and second priority sensing data, and a channel controller configured to allocate at least one channel selected from among a plurality of channels to a first channel group, allocate at least another channel selected from among the plurality of channels to a second channel group, assign the first channel group to process the first priority sensing data in relation to the first memory area, and assign the second channel group to process the second priority sensing data in relation to the second memory area, wherein a number of data input/output (I/O) pins connected to the first channel group is greater than a number of data I/O
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: November 2, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Youngmin Jo, Daeseok Byeon, Tongsung Kim
  • Patent number: 11157425
    Abstract: A memory device provides a first memory area and a second memory area. A smart buffer includes; a priority setting unit receiving sensing data and a corresponding weight, determining a priority of the sensing data based on the corresponding weight, and classifying the sensing data as first priority sensing data or second priority sensing data based on the priority, and a channel controller allocating a channel to a first channel group, allocating another channel to a second channel group, assigning the first channel group to process the first priority sensing data in relation to the first memory area, and assigning the second channel group to process the second priority sensing data in relation to the second memory area.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: October 26, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Youngmin Jo, Daeseok Byeon, Tongsung Kim
  • Patent number: 11115021
    Abstract: An impedance calibration circuit includes a first code generation circuit connected to a first reference resistor, and configured to generate a first code for forming a resistance based on the first reference resistor, by using the first reference resistor; a second code generation circuit configured to form a resistance of a second reference resistor less than the resistance of the first reference resistor, based on the first code, and generate a second code by using the second reference resistor; and a target impedance code generation circuit configured to generate a target impedance code based on the first code, the second code, and a target impedance value, and form an impedance having the target impedance value in a termination driver connected to the impedance calibration circuit, based on the target impedance code.
    Type: Grant
    Filed: September 15, 2020
    Date of Patent: September 7, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tongsung Kim, Youngmin Jo, Jungjune Park, Jindo Byun, Dongho Shin, Jeongdon Ihm
  • Publication number: 20210242870
    Abstract: An impedance calibration circuit includes a first code generation circuit connected to a first reference resistor, and configured to generate a first code for forming a resistance based on the first reference resistor, by using the first reference resistor; a second code generation circuit configured to form a resistance of a second reference resistor less than the resistance of the first reference resistor, based on the first code, and generate a second code by using the second reference resistor; and a target impedance code generation circuit configured to generate a target impedance code based on the first code, the second code, and a target impedance value, and form an impedance having the target impedance value in a termination driver connected to the impedance calibration circuit, based on the target impedance code.
    Type: Application
    Filed: September 15, 2020
    Publication date: August 5, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Tongsung KIM, Youngmin JO, Jungjune PARK, Jindo BYUN, Dongho SHIN, Jeongdon IHM
  • Publication number: 20210226613
    Abstract: A method of operating a system including a parameter monitoring circuit and a host, includes generating a first parameter applying a first code to a current parameter, wherein a first offset is applied to the first code; generating a first comparison result by comparing the first parameter with a reference parameter value; generating a second parameter applying a second code to the current parameter, wherein a second offset is applied to the second code; generating a second comparison result by comparing the second parameter with the reference parameter value; detecting an error in the current parameter, based on the first comparison result and the second comparison result; and providing a signal based on the error to the host.
    Type: Application
    Filed: April 5, 2021
    Publication date: July 22, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dongho SHIN, Kyungtae KANG, Junha LEE, Tongsung KIM, Jangwoo LEE, Jeongdon IHM, Byunghoon JEONG
  • Publication number: 20210132816
    Abstract: A memory device comprises a smart buffer, and a memory area divided into a first memory area and a second memory area, wherein the smart buffer comprises a priority setting unit configured to receive a sensing data and a corresponding weight from a controller, determine a priority of the sensing data based on the weight, and classify the sensing data as one of first priority sensing data and second priority sensing data, and a channel controller configured to allocate at least one channel selected from among a plurality of channels to a first channel group, allocate at least another channel selected from among the plurality of channels to a second channel group, assign the first channel group to process the first priority sensing data in relation to the first memory area, and assign the second channel group to process the second priority sensing data in relation to the second memory area, wherein a number of data input/output (I/O) pins connected to the first channel group is greater than a number of data I/O
    Type: Application
    Filed: September 22, 2020
    Publication date: May 6, 2021
    Inventors: YOUNGMIN JO, DAESEOK BYEON, TONGSUNG KIM
  • Publication number: 20210133128
    Abstract: A memory device provides a first memory area and a second memory area. A smart buffer includes; a priority setting unit receiving sensing data and a corresponding weight, determining a priority of the sensing data based on the corresponding weight, and classifying the sensing data as first priority sensing data or second priority sensing data based on the priority, and a channel controller allocating a channel to a first channel group, allocating another channel to a second channel group, assigning the first channel group to process the first priority sensing data in relation to the first memory area, and assigning the second channel group to process the second priority sensing data in relation to the second memory area.
    Type: Application
    Filed: April 21, 2020
    Publication date: May 6, 2021
    Inventors: YOUNGMIN JO, DAESEOK BYEON, TONGSUNG KIM
  • Patent number: 10998888
    Abstract: A parameter monitoring circuit includes a code generation circuit configured to generate a first code, to which a first offset is applied, and a second code, to which a second offset is applied; a parameter adjustment circuit configured to generate a first parameter and a second parameter by respectively applying the first code and the second code to a current parameter; a comparator circuit configured to generate a first comparison result and a second comparison result, the first comparison result indicating a comparison result between the first parameter and a reference parameter value, and the second comparison result indicating a comparison result between the second parameter and the reference parameter value; and a parameter error detection circuit configured to detect an error in the current parameter, based on the first comparison result and the second comparison result.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: May 4, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dongho Shin, Kyungtae Kang, Junha Lee, Tongsung Kim, Jangwoo Lee, Jeongdon Ihm, Byunghoon Jeong
  • Publication number: 20210075405
    Abstract: A parameter monitoring circuit includes a code generation circuit configured to generate a first code, to which a first offset is applied, and a second code, to which a second offset is applied; a parameter adjustment circuit configured to generate a first parameter and a second parameter by respectively applying the first code and the second code to a current parameter; a comparator circuit configured to generate a first comparison result and a second comparison result, the first comparison result indicating a comparison result between the first parameter and a reference parameter value, and the second comparison result indicating a comparison result between the second parameter and the reference parameter value; and a parameter error detection circuit configured to detect an error in the current parameter, based on the first comparison result and the second comparison result.
    Type: Application
    Filed: April 29, 2020
    Publication date: March 11, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dongho SHIN, Kyungtae KANG, Junha LEE, Tongsung KIM, Jangwoo LEE, Jeongdon IHM, Byunghoon JEONG