Abstract: A dead time detector detects when a dead time occurs in a switching regulator comprising a high-side switch and a low-side switch and generates an output signal based on a duration of the dead time. A first circuit generates a first turn-on signal to turn on the high-side switch and a first turn-off signal to turn off the low-side switch based on the output signal in response to a first edge of a pulse width modulated pulse. A second circuit generates a second turn-on signal to turn on the low-side switch and a second turn-off signal to turn off the high-side switch based on the output signal in response to a second edge of the pulse width modulated pulse. A controller generates drive signals to drive the high-side and low-side switches based on the first and second turn-on and turn-off signals.

Abstract: A dead time detector detects when a dead time occurs in a switching regulator comprising a high-side switch and a low-side switch and generates an output signal based on a duration of the dead time. A first circuit generates a first turn-on signal to turn on the high-side switch and a first turn-off signal to turn off the low-side switch based on the output signal in response to a first edge of a pulse width modulated pulse. A second circuit generates a second turn-on signal to turn on the low-side switch and a second turn-off signal to turn off the high-side switch based on the output signal in response to a second edge of the pulse width modulated pulse. A controller generates drive signals to drive the high-side and low-side switches based on the first and second turn-on and turn-off signals.

Abstract: A method models the electrical characteristics of wide-channel transistors, such as power transistors, by generating a lumped-element distributed circuit model. More specifically, the active area of the transistor is organized in elementary transistor cells, which are substituted by active lumped elements. Similarly the passive area of the transistor is organized in elementary strip-lines, which are substituted by passive lumped elements. Preferably, the parameters of the lumped elements are extracted automatically from layout information, such as path dimensions, and technological data, such as sheet resistance of the metal layers, sheet resistance of the polysilicon layers and oxide thickness.