Patents by Inventor Tony CHHEANG

Tony CHHEANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9870157
    Abstract: A data storage device includes a non-volatile semiconductor storage device and a controller that is configured to perform interleaving of small reads with large reads and small writes with large writes. In the example of reads, the controller receives a sequence of read commands including a first read command having a read size larger than a read threshold size and a second read command having a read size smaller than the read threshold size, and issue first and second read requests in succession to read data of a predetermined size less than the read threshold size, from the non-volatile semiconductor storage device. The interleaving is achieved by issuing the first read request to execute the first read command and the second read request to execute the second read command. As a result of this interleaving, the second read command will have a chance to complete earlier than the first read command even though it was received by the controller later in time.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: January 16, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Raja V. S. Halaharivi, Tony Chheang, Dishi Lai, Fred Au
  • Publication number: 20160291884
    Abstract: A data storage device includes a non-volatile semiconductor storage device and a controller that is configured to perform interleaving of small reads with large reads and small writes with large writes. In the example of reads, the controller receives a sequence of read commands including a first read command having a read size larger than a read threshold size and a second read command having a read size smaller than the read threshold size, and issue first and second read requests in succession to read data of a predetermined size less than the read threshold size, from the non-volatile semiconductor storage device. The interleaving is achieved by issuing the first read request to execute the first read command and the second read request to execute the second read command. As a result of this interleaving, the second read command will have a chance to complete earlier than the first read command even though it was received by the controller later in time.
    Type: Application
    Filed: March 31, 2015
    Publication date: October 6, 2016
    Inventors: Raja V.S. HALAHARIVI, Tony CHHEANG, Dishi LAI, Fred AU