Abstract: An arm assembly with an arm locking system is described. The arm assembly can include a base to position the arm on a support structure, an extension arm, a height adjustable lift arm, and a head assembly adapted to receive an electronic display. The extension arm can be rotatably coupled to the base at a first joint, the lift arm can be rotatably coupled to the extension arm at a second joint, and the head assembly can be rotatably coupled to the lift arm at a third joint. The arm locking system can include a first lock, a second lock, and a third lock engageable to selectively prevent movement about the first joint, the second joint, and the third joint, respectively. The arm locking system can also include a fourth lock engageable to selectively prevent the height adjustment of the lift arm.

Abstract: A cart comprising a base, and a work station supported by the base. The work station including a compartment, a work surface disposed above the compartment, and an opening mechanism. The work surface moveable between an open position to provide access to the compartment and a closed position to deny access to the compartment. The work station including a first opening mechanism adapted to concurrently translate and rotate the work surface. Methods of using such carts.

Abstract: A cart comprising a base, and a work station supported by the base. The work station including a compartment, a work surface disposed above the compartment, and an opening mechanism. The work surface moveable between an open position to provide access to the compartment and a closed position to deny access to the compartment. The work station including a first opening mechanism adapted to concurrently translate and rotate the work surface. Methods of using such carts.

Abstract: The present invention is related to an enhanced high density Read-Only-Memory (ROM) device with select gate. A thin oxide layer is deposited on the ROM cell matrix and it is extended to the select lines which is on the top and bottom side of the ROM cell matrix to form the select gate. The ROM cell matrix can be organized more flexible by using the buried layers to pick out the unwanted gates. The metal contact can be directly made in this extended region too. Thereafter it reduces the manufacturing cost and achieves a high speed and density and simple process device.