Patents by Inventor Tooru Komatu

Tooru Komatu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sputtered silicide film
    Patent number: 5612571
    Abstract: According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.
    Type: Grant
    Filed: August 9, 1995
    Date of Patent: March 18, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Michio Satou, Takasi Yamanobe, Mituo Kawai, Tooru Komatu, Hiromi Shizu, Noriaki Yagi
  • Sputtering target and method of manufacturing the same
    Patent number: 5508000
    Abstract: According to the present invention, silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.
    Type: Grant
    Filed: November 21, 1994
    Date of Patent: April 16, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Michio Satou, Takasi Yamanobe, Mituo Kawai, Tooru Komatu, Hiromi Shizu, Noriaki Yagi
  • Sputtering target and method of manufacturing the same
    Patent number: 5409517
    Abstract: According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.
    Type: Grant
    Filed: March 13, 1992
    Date of Patent: April 25, 1995
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Michio Satou, Takasi Yamanobe, Mituo Kawai, Tooru Komatu, Hiromi Shizu, Noriaki Yagi