Abstract: A method and an apparatus for controlling exposure of a surface of a substrate in a process of structuring the substrate with light of a predetermined intensity are described, wherein the light is directed to the surface by means of a deflectable mirror. The intensity has a first maximum at a first deflection of the deflectable mirror, a first minimum at a second deflection of the deflectable mirror, a second maximum at a third deflection of the deflectable mirror, and a second minimum at a fourth deflection of the deflectable mirror. A signal representing the predetermined intensity, and a signal representing a threshold intensity are received, the threshold intensity being equal to or less than the intensity of the second maximum. It is determined whether the predetermined intensity is greater than the threshold intensity.

Abstract: The present invention relates in general to detection of an alignment mark on a workpiece. More particularly, interferometry is applied to detect alignment signals from the surface of a workpiece such as a wafer or reticle. Other aspects of the present invention are reflected in the detailed description, figures and claims.

Abstract: A method and an apparatus for controlling exposure of a surface of a substrate in a process of structuring the substrate with light of a predetermined intensity are described, wherein the light is directed to the surface by means of a deflectable mirror. The intensity has a first maximum at a first deflection of the deflectable mirror, a first minimum at a second deflection of the deflectable mirror, a second maximum at a third deflection of the deflectable mirror, and a second minimum at a fourth deflection of the deflectable mirror. A signal representing the predetermined intensity, and a signal representing a threshold intensity are received, the threshold intensity being equal to or less than the intensity of the second maximum. It is determined whether the predetermined intensity is greater than the threshold intensity.

Abstract: An aspect of the present invention includes a method for homogenizing a beam of electromagnetic radiation. Said beam of electromagnetic radiation is impinged onto a first array of deflecting elements. Said beam of electromagnetic radiation is dispersed into a number of spatially separated beamlets by said first array of deflecting elements. Said beamlets are deflected by said first array of deflecting elements. Said deflected beamlets are impinged onto a second array of deflecting elements. Said beamlets are superimposed at a target plane to thereby form a radiation beam having a homogenized spatial intensity distribution. The invention also relates to an apparatus for homogenizing a beam of electromagnetic radiation.

Abstract: The present invention includes methods and devices that improve the radiation-resistance of a movable micromechanical optical element. In particular, a radiation-resistant layer is added to a movable micro-mechanical optical element, suitable to reduce the surface and bulk material changes to the element that result from exposure to pulsed laser energy densities less than 100 micro-joules per square centimeter and at wavelengths less than or equal to about 248 nm.

Abstract: An aspect of the present invention includes a method to print pattern with improved edge acuity. In one embodiment a method for printing fine patterns comprising the actions of: providing an SLM and providing a pixel layout pattern with different categories of modulating elements, the categories differing in the phase of the complex amplitude. Other aspects of the present invention are reflected in the detailed description, figures and claims.

Abstract: The present invention relates to a device for homogenizing the spatial intensity distribution of a spatially coherent radiation beam. The device includes a grating arranged in the propagation path of a spatially coherent radiation beam for diffracting the coherent beam and thus decreasing the coherence length of a diffracted radiation beam in a direction orthogonal to the propagation direction of the radiation beam relative to the width of the radiation beam in the orthogonal direction; and a radiation splitting and directing arrangement arranged in the propagation path of the diffracted radiation beam for splitting the diffracted radiation beam into spatially separated portions and for superimposing the spatially separated portions to form a radiation beam having a homogenized spatial intensity distribution.

Abstract: The present invention relates to a method for compensating the impact of at least one defective pixel with a known position in a spatial light modulator (SLM) when creating a pattern of the SLM on a work piece covered with a layer sensitive to electromagnetic radiation. A source for emitting electromagnetic radiation is provided. Said radiation is illuminating said SLM having a plurality of modulating elements (pixels). In a writing pass an image of said modulator is projected on said work piece. A compensation for defective pixels in at least one other writing pass is performed. The invention also relates to an apparatus for performing said method.

Abstract: The present invention relates to a system and a method for microlithographic writing and inspection on photosensitive substrates, and specially printing and inspection of patterns with extremely high precision, such as photomasks for semiconductor device patterns, display panels, integrated optical, devices and electronic interconnect structures. More specifically the invention relates to compensation of substrate offset by modifying the position data or the feeding of the same of the deflector, and the use of a direct digital synthesis (DDS) unit for generation of the sweep frequency drive signal.

Abstract: The present invention relates to preparation of patterned reticles to be used as masks in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a masking layer on a reticle. The methods and devices produce small feature dimensions in masks and phase shift masks. The methods described for masks are in many cases applicable to the direct writing on other workpieces having similarly small features, such as semiconductor, cryogenic, magnetic and optical microdevices.

Abstract: The present invention relates to an apparatus and method for patterning a work piece arranged at an image plane and sensitive to electromagnetic radiation. Said apparatus comprising a source for emitting electromagnetic radiation directed onto a selected object plane, a computer-controlled reticle comprising a plurality of object pixels, adapted to receive said electromagnetic radiation at said selected object plane and being capable of relaying said electromagnetic radiation toward said work piece arranged at said image plane, an optical projection system comprising a Fourier filter adapted to filter said relayed radiation in a Fourier space and a first lens arrangement adapted to create essentially parallel central axis of cones of radiation onto said image plane, where every cone of radiation in a specific image pixel in said image plane corresponds to a specific object pixel in said computer-controlled reticle.

Abstract: The present invention relates to a method for compensating the impact of at least one defective pixel with a known position in a spatial light modulator (SLM) when creating a pattern of the SLM on a work piece covered with a layer sensitive to electromagnetic radiation. A source for emitting electromagnetic radiation is provided. Said radiation is illuminating said SLM having a plurality of modulating elements (pixels). In a writing pass an image of said modulator is projected on said work piece. A compensation for defective pixels in at least one other writing pass is performed. The invention also relates to an apparatus for performing said method.

Abstract: The present invention relates to preparation of patterned reticles to be used as masks in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a masking layer on a reticle. The methods and devices produce small feature dimensions in masks and phase shift masks. The methods described for masks are in many cases applicable to the direct writing on other workpieces having similarly small features, such as semiconductor, cryogenic, magnetic and optical microdevices.