Patents by Inventor Torsten H. Hartmann

Torsten H. Hartmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System for increasing charge size for single crystal silicon production
    Patent number: 6875269
    Abstract: Methods and apparatuses are useful to add polycrystalline rod material to the crucible of a CZ furnace and thereby increase utilization of crucible volume in the production of large diameter CZ silicon ingots. Multiple silicon rods are melted in the CZ furnace, and the subsequent production of a single crystal silicon ingot can occur without operating the isolation valve or opening the upper chamber of the furnace.
    Type: Grant
    Filed: November 13, 2002
    Date of Patent: April 5, 2005
    Assignee: Advanced Silicon Materials LLC
    Inventors: Torsten H. Hartmann, Henry Dare Wood
  • System for increasing charge size for single crystal silicon production
    Publication number: 20030089302
    Abstract: Methods and apparatuses are useful to add polycrystalline rod material to the crucible of a CZ furnace and thereby increase utilization of crucible volume in the production of large diameter CZ silicon ingots. Multiple silicon rods are melted in the CZ furnace, and the subsequent production of a single crystal silicon ingot can occur without operating the isolation valve or opening the upper chamber of the furnace.
    Type: Application
    Filed: November 13, 2002
    Publication date: May 15, 2003
    Applicant: Advanced Silicon Materials LLC
    Inventors: Torsten H. Hartmann, Henry Dare Wood