Patents by Inventor Torsten Klick

Torsten Klick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuits with SRAM cells having additional read stacks
    Patent number: 9293189
    Abstract: Integrated circuits that include SRAM cells having additional read stacks are provided. In accordance with one embodiment an integrated circuit includes a memory storage array of memory cells. The integrated circuit includes a read stack coupled to each memory cell of the memory storage array. Each read stack includes a read pull-down transistor having a first threshold voltage, and a read pass gate transistor coupled in series with the read pull down transistor and having a second threshold voltage greater than the first threshold voltage.
    Type: Grant
    Filed: November 20, 2014
    Date of Patent: March 22, 2016
    Assignee: GLOBALFOUNDRIES, INC.
    Inventors: Ralf van Bentum, Torsten Klick
  • INTEGRATED CIRCUITS WITH SRAM CELLS HAVING ADDITIONAL READ STACKS
    Publication number: 20150078068
    Abstract: Integrated circuits that include SRAM cells having additional read stacks are provided. In accordance with one embodiment an integrated circuit includes a memory storage array of memory cells. The integrated circuit includes a read stack coupled to each memory cell of the memory storage array. Each read stack includes a read pull-down transistor having a first threshold voltage, and a read pass gate transistor coupled in series with the read pull down transistor and having a second threshold voltage greater than the first threshold voltage.
    Type: Application
    Filed: November 20, 2014
    Publication date: March 19, 2015
    Inventors: Ralf van Bentum, Torsten Klick
  • Integrated circuits with SRAM cells having additional read stacks and methods for their fabrication
    Patent number: 8921197
    Abstract: Integrated circuits that include SRAM cells having additional read stacks and methods for their fabrication are provided. In accordance with one embodiment a method for fabricating such an integrated circuit includes forming a plurality of SRAM cells in and on a semiconductor substrate, each of the plurality of SRAM cells including a read pull down transistor and a read pass gate transistor. First conductivity-determining impurity ions are implanted to establish a first threshold voltage in each of the read pull down transistors; and second conductivity-determining impurity ions are implanted to establish a second threshold voltage different than the first threshold voltage in each of the read pass gate transistors.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: December 30, 2014
    Assignee: GLOBALFOUNDRIES, Inc.
    Inventors: Ralf van Bentum, Torsten Klick
  • INTEGRATED CIRCUITS WITH SRAM CELLS HAVING ADDITIONAL READ STACKS AND METHODS FOR THEIR FABRICATION
    Publication number: 20140078817
    Abstract: Integrated circuits that include SRAM cells having additional read stacks and methods for their fabrication are provided. In accordance with one embodiment a method for fabricating such an integrated circuit includes forming a plurality of SRAM cells in and on a semiconductor substrate, each of the plurality of SRAM cells including a read pull down transistor and a read pass gate transistor. First conductivity-determining impurity ions are implanted to establish a first threshold voltage in each of the read pull down transistors; and second conductivity-determining impurity ions are implanted to establish a second threshold voltage different than the first threshold voltage in each of the read pass gate transistors.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 20, 2014
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Ralf van Bentum, Torsten Klick