Abstract: The invention relates to a method for monitoring a lateral offset of an actual weld seam configuration relative to a desired weld seam configuration in particular in the motor vehicle sector, comprising the following steps: a) providing at least a first structural part having a geometric deviation in the region of the desired weld seam configuration; b) guiding a laser beam along the first structural part to produce a weld seam, forming a melt pool, thereby producing the actual weld seam configuration; and c) detecting a reflection from the melt pool simultaneously with step b).

Abstract: The invention relates to a method for monitoring a lateral offset of an actual weld seam configuration relative to a desired weld seam configuration, in particular in the motor vehicle sector, comprising the following steps: a) providing at least a first structural part having a geometric deviation in the region of the desired weld seam configuration; b) guiding a laser beam along the first structural part to produce a weld seam, forming a melt pool, thereby producing the actual weld seam configuration; and c) detecting a reflection from the melt pool simultaneously with step b).

Abstract: A method for exposing a semiconductor wafer compensates for the effects of process inhomogeneities, e.g. in semiconductor etching or deposition processes, by individually adjusting sets of exposure parameters of an exposure tool for any exposure field. The exposure parameters are preferably the dose and the focus, which are varied across the semiconductor wafer.

Abstract: A test reticle having a pad and antenna structures with varying critical dimensions is provided to measure sidewall angles developing in the resist sidewalls of clear lines. These sidewall angles originate from resist flow due to the occurrence of excessively high temperatures in a resist process on a lithographic track after the exposure of a semiconductor wafer. A scanning electron microscope is used to perform the measurement. A sequence of temperatures is applied in each postbake step to process a wafer, and the sidewall angle is determined afterwards from e.g. a critical dimension measurement with a known resist thickness. An error signal is issued, if a threshold value of a sidewall angle is exceeded. The temperature of the resist process, e.g. the postbake, is then adjusted to a temperature below the temperature causing the warning signal.

Abstract: A processing tool for manufacturing semiconductor devices, e.g. a lithography cluster, has a device transfer area with an optical sensor (e.g. CCD-camera), and an illumination system. A substrate (e.g., a semiconductor wafer, a reticle, or a mask for exposure on the wafer) that is transferred to or from one of its processing chambers can be scanned during its movement at low resolution. Scanning is performed before and after processing in at least one the processing chambers of the processing tool. The images are compared and optionally subtracted from each other. Defects imposed to the substrate due to contaminating particles only during the present processes with sizes larger than 10 &mgr;m are visible on the subtracted image. Defects imposed earlier are diminished as well as structures formed from a mask pattern below 10 &mgr;m. Pattern recognition allows efficient classification of the defects just detected in a processing tool.

Abstract: A method for exposing a semiconductor wafer compensates for the effects of process inhomogeneities, e.g. in semiconductor etching or deposition processes, by individually adjusting sets of exposure parameters of an exposure tool for any exposure field. The exposure parameters are preferably the dose and the focus, which are varied across the semiconductor wafer.

Abstract: A test reticle having a pad and antenna structures with varying critical dimensions is provided to measure sidewall angles developing in the resist sidewalls of clear lines. These sidewall angles originate from resist flow due to the occurrence of excessively high temperatures in a resist process on a lithographic track after the exposure of a semiconductor wafer. A scanning electron microscope is used to perform the measurement. A sequence of temperatures is applied in each postbake step to process a wafer, and the sidewall angle is determined afterwards from e.g. a critical dimension measurement with a known resist thickness. An error signal is issued, if a threshold value of a sidewall angle is exceeded. The temperature of the resist process, e.g. the postbake, is then adjusted to a temperature below the temperature causing the warning signal.