Abstract: In a first aspect the present application pertains to an anti-GUCY2C antibody, corresponding antibody-drug conjugates comprising amatoxin for use in the treatment of gastrointestinal cancers, such as colorectal cancer, and pancreatic cancer. In a second aspect the present invention pertains to pharmaceutical compositions comprising the antibody-drug conjugates of the invention for use in the treatment of gastrointestinal cancer. The present invention also pertains to methods of treatment of gastrointestinal cancer using the antibody-drug conjugates of the invention.

Abstract: The present invention relates to a method for etching at least one surface of a plastic substrate, the method comprising steps (A) to (C), wherein step (B) comprises a contacting with a pre-treatment composition comprising one or more than one fluorine-free surface-active compound, and step (C) comprises a contacting with an etching composition comprising one or more than one manganese species, wherein after step (B) and prior to step (C) no rinsing is applied, and the etching composition is substantially free of, preferably does not comprise, fluorine-containing surface-active compounds.

Abstract: A safe digital input circuit with a first input and a second input for reading in a sensor signal with a clock generator to generate a clock signal is shown. The safe digital input circuit includes a first clock output and a second clock output for connecting sensors to safely shut down a plant. A first and a second signal line are connected to a clock generator output of the clock generator to forward the clock signal to the first and second clock output.

Abstract: The present invention relates to a method for monitoring the total amount of brighteners in an acidic copper/copper alloy plating bath during a copper/copper alloy plating process, the use of such a method for controlling a plating process, a controlled process for electrolytically depositing copper/copper alloy onto a substrate utilizing the method for monitoring according to the present invention, and the use of one or more than one redox active compound for monitoring and/or determining the total amount of brighteners in the acidic copper/copper alloy plating bath.

Abstract: The present invention relates to a method for monitoring the total amount of brighteners in an acidic copper/copper alloy plating bath during a copper/copper alloy plating process, the use of such a method for controlling a plating process, a controlled process for electrolytically depositing copper/copper alloy onto a substrate utilizing the method for monitoring according to the present invention, and the use of one or more than one redox active compound for monitoring and/or determining the total amount of brighteners in the acidic copper/copper alloy plating bath.

Abstract: The present invention concerns a plating method for manufacturing of electrical contacts on a solar module wherein the wiring between silicon solar cells in a solar module is deposited by electroplating onto a conductive seed. The wiring between individual silicon solar cells comprises wiring reinforcement pillars which improve the reliability of said wiring.

Abstract: To be able to form a copper-zinc-tin alloy which optionally comprises at least one chalcogenide and thus forms a semiconductor without the use of toxic substances a metal plating composition for the deposition of a copper-zinc-tin alloy is disclosed, wherein said metal plating composition comprises at least one copper plating species, at lease one zinc plating species, at least one tin plating species and at least one complexing agent and further, if the alloy contains at least one chalcogen, at least one chalcogen plating species.

Abstract: The present invention relates to a metallization method for solar cell substrates by electroplating wherein i) a resist is deposited onto at least one surface of a solar cell substrate and patterned, ii) a conductive seed layer is deposited onto the patterned resist and into the openings formed by the resist pattern, iii) a first metal or metal alloy is electroplated onto the conductive seed layer, and iv) those portions of the first metal or metal alloy layer deposited onto the patterned resist are removed.

Abstract: The present invention concerns a plating method for manufacturing of electrical contacts on a solar module wherein the wiring between silicon solar cells in a solar module is deposited by electroplating onto a conductive seed. The wiring between individual silicon solar cells comprises wiring reinforcement pillars which improve the reliability of said wiring.

Abstract: The invention relates to electroplating additives for the deposition of a group IB metal/binary or ternary group IB-group IIIA/ternary, quaternary or pentanary group IB-group IIIA-group VIA alloy on substrates useful for thin film solar cells. The additives are thiourea compounds or derivatives which have the general formula (A): wherein X1 and X2 may be the same or different and are selected from the group consisting of arylene and heteroarylene; FG1 and FG2 may be the same or different or are selected from the group consisting of —S(O)2OH, —S(O)OH, —COOH, —P(O)2OH and primary, secondary and tertiary amino groups and salts and esters thereof; R is selected from the group consisting of alkylene, arylene or heteroarylene and n and m are integers from 1 to 5.

Abstract: The invention relates to electroplating additives for the deposition of a group IB metal/binary or ternary group IB-group IIIA/ternary, quaternary or pentanary group IB-group IIIA-group VIA alloy on substrates useful for thin film solar cells. The additives have the general formula (A): wherein X1 and X2 may be the same or different and are selected from the group consisting of arylene and heteroarylene; FG1 and FG2 may be the same or different or are selected from the group consisting of —S(O)2OH, —S(O)OH, —COOH, —P(O)2OH and primary, secondary and tertiary amino groups and salts and esters thereof; R is selected from the group consisting of alkylene, arylene or heteroarylene and n and m are integers from 1 to 5.

Abstract: To be able to form a copper-zinc-tin alloy which optionally comprises at least one chalcogenide and thus forms a semiconductor without the use of toxic substances a metal plating composition for the deposition of a copper-zinc-tin alloy is disclosed, wherein said metal plating composition comprises at least one copper plating species, at lease one zinc plating species, at least one tin plating species and at least one complexing agent and further, if the alloy contains at least one chalcogen, at least one chalcogen plating species.