Abstract: To enhance a resilience performance of a ball at hitting the ball, a grommet is configured to include a strip-shaped portion extending in a predetermined direction and a cylindrical portion projecting from one surface of the strip-shaped portion, the cylindrical portion being a portion through which a string passes. A bulge portion is formed on a part on another surface of the strip-shaped portion, the part being along an inner periphery of the cylindrical portion. The bulge portion has a shape bulged more than the other surface of the strip-shaped portion, and the string is folded back at the bulge portion. A plurality of the protrusions are formed between the cylindrical portions adjacent to one another, the plurality of the protrusions being portions to which the string contacts.

Abstract: To enhance a resilience performance of a ball at hitting the ball, a grommet is configured to include a strip-shaped portion extending in a predetermined direction and a cylindrical portion projecting from one surface of the strip-shaped portion, the cylindrical portion being a portion through which a string passes. A bulge portion is formed on a part on another surface of the strip-shaped portion, the part being along an inner periphery of the cylindrical portion. The bulge portion has a shape bulged more than the other surface of the strip-shaped portion, and the string is folded back at the bulge portion. A plurality of the protrusions are formed between the cylindrical portions adjacent to one another, the plurality of the protrusions being portions to which the string contacts.

Abstract: Disclosed are a method manufacturing a crystalline semiconductor material capable of improving the crystallinity and a method of manufacturing a semiconductor device using the same. An amorphous film made of silicon (Si) is formed on a substrate with a protective film inbetween. Then, a short-wavelength energy beam is irradiated to the amorphous film as a first heat treatment, thereby forming a crystalline film made of quasi-single crystal. Subsequently, another short-wavelength energy beam is irradiated to the crystalline film as a second heat treatment in order to selectively fuse and re-crystallize only the grain boundary of the crystalline film and the neighboring region. As a result, a crystalline film with excellent crystallinity can be obtained.

Abstract: Disclosed are a method of manufacturing a crystalline semiconductor material capable of improving the crystallinity and a method of manufacturing a semiconductor device using the same. An amorphous film made of silicon (Si) is formed on a substrate with a protective film inbetween. Then, a short-wavelength energy beam is irradiated to the amorphous film as a first heat treatment, thereby forming a crystalline film made of quasi-single crystal. Subsequently, another short-wavelength energy beam is irradiated to the crystalline film as a second heat treatment in order to selectively fuse and re-crystallize only the grain boundary of the crystalline film and the neighboring region. As a result, a crystalline film with excellent crystallinity can be obtained.