Abstract: An information conversion device has one of: a replication necessity analysis unit for specifying where an instruction referred by phi functions is present in one basic block and inserting a transfer instruction therein; an intra-loop constant analysis unit for specifying a closed path in which a phi function reference is circulated and inserting the transfer instruction therein; an inter-instruction dependency analysis unit for specifying where data dependency is present between instructions as a reference destination of the phi functions and inserting the transfer instruction therein; a same instruction reference analysis unit for specifying where the phi functions referring to a result of a same instruction before branching are present and inserting the transfer instruction therein; and a spill out validity analysis unit for storing a value present in a loop processing, loading the value after the loop processing ends, and deleting the transfer instruction.

Abstract: A continuous fiber reinforced resin composite material of the present disclosure is a continuous fiber reinforced resin composite material containing continuous reinforcing fibers and a thermoplastic resin, wherein a peak temperature of tan ? at an interface between the continuous reinforcing fibers and the thermoplastic resin in the continuous fiber reinforced resin composite material is 80° C. or higher.

Abstract: A program causes a computer to serve as an information conversion device that is equipped with at least one of (A)-(E): (A) a replication necessity analysis processor specifying a location where an instruction referred to from phi functions present in one basic block is present and inserting an inter-register transfer instruction therein; (B) an intra-loop constant analysis processor specifying a closed path in which the references of the phi functions are circulated and inserting the inter-register transfer instruction therein; (C) an inter-instruction dependency analysis processor specifying a location where data dependency is present between instructions, which are reference destinations of the phi functions, and inserting the inter-register transfer instruction thereat; (D) an identical instruction reference analysis processor specifying, in a plurality of execution paths, a location where the phi functions referring to a result of the identical instruction before branching are present and inserting the i

Abstract: An imaging apparatus includes a photoelectric conversion unit of a first conductivity type, a charge holding unit of the first conductivity type, the charge holding unit being configured to hold electric charges transferred from the photoelectric conversion unit, a floating diffusion unit of the first conductivity type, the floating diffusion unit being configured to receive electric charges transferred from the charge holding unit, a punch-through prevention layer of a second conductivity type, the punch-through prevention layer being disposed between the charge holding unit and the floating diffusion unit to contact the floating diffusion unit, and a transfer assistance layer of the first conductivity type, the transfer assistance layer being disposed between the punch-through prevention layer and a surface of a semiconductor substrate.

Abstract: Provided are a continuous fiber-reinforced resin molding having high adhesion and compatibility in an interface between continuous reinforcing fibers and a synthetic resin, and in which a low occurrence of voids in the interface and adequate strength can be realized, and a method for manufacturing the same. A continuous fiber-reinforced resin molding comprising a synthetic resin and continuous reinforcing fibers having a substantially circular cross section, the continuous fiber-reinforced molding being characterized in that the number of continuous reinforcing fibers where the porosity in a peripheral-edge region separated by one tenth the radius of a single continuous reinforcing fiber from the peripheral edge part of the continuous reinforcing fibers in the interface between the synthetic resin and the single continuous reinforcing fiber in a cross section orthogonal to the length direction of the continuous reinforcing fibers is at least 10% of the total number of continuous reinforcing fibers.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: A photoelectric conversion apparatus includes first and second signal lines, first and second circuits, and a switch. Signals based on electric charges generated in first and second photoelectric conversion portions are to be read out to the first and second signal lines, respectively. The first circuit includes a first input unit to which the first signal line is connected. The first circuit is configured to perform processing of a signal input to the first input unit, with a first gain. The second circuit includes a second input unit to which the second signal line is connected. The second circuit is configured to perform processing of a signal input to the second input unit. The switch is configured to perform switching between a connected state and a disconnected state between the first signal line and the second signal line.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: A solid-state imaging device includes pixels each of which includes a photoelectric converter configured to generate charges by photoelectric conversion, a holding unit configured to hold charges generated by the photoelectric converter, and a transfer unit configured to transfer charges from the photoelectric converter to the holding unit, and outputs a signal based on charges in the holding unit, a transfer control unit configured to control the transfer unit to transfer charges generated by the photoelectric converter during one exposure period to the holding unit by a variable number, which is one or greater, of transfer operations, an amplifier unit configured to amplify the signal, and a control unit configured to control a gain of the amplifier unit to be a first gain when the number of transfer operations is first number and to be a second gain when the number of transfer operations is a second number.

Abstract: A solid-state imaging device includes pixels each of which includes a photoelectric converter configured to generate charges by photoelectric conversion, a holding unit configured to hold charges generated by the photoelectric converter, and a transfer unit configured to transfer charges from the photoelectric converter to the holding unit, and outputs a signal based on charges in the holding unit, a transfer control unit configured to control the transfer unit to transfer charges generated by the photoelectric converter during one exposure period to the holding unit by a variable number, which is one or greater, of transfer operations, an amplifier unit configured to amplify the signal, and a control unit configured to control a gain of the amplifier unit to be a first gain when the number of transfer operations is first number and to be a second gain when the number of transfer operations is a second number.

Abstract: An aspect of the disclosure relates to a semiconductor device including a semiconductor element, a connection terminal configured to output a signal based on an output of the semiconductor element, a protection circuit connected to the connection terminal, and a voltage limiting element connected to the connection terminal, wherein the protection circuit is connected to a first power supply line having a first potential and a second power supply line having a second potential lower than the first potential, and wherein a potential supplied to the voltage limiting element is higher than the second potential and lower than the first potential.

Abstract: A photoelectric conversion apparatus includes first and second signal lines, first and second circuits, and a switch. Signals based on electric charges generated in first and second photoelectric conversion portions are to be read out to the first and second signal lines, respectively. The first circuit includes a first input unit to which the first signal line is connected. The first circuit is configured to perform processing of a signal input to the first input unit, with a first gain. The second circuit includes a second input unit to which the second signal line is connected. The second circuit is configured to perform processing of a signal input to the second input unit. The switch is configured to perform switching between a connected state and a disconnected state between the first signal line and the second signal line.

Abstract: An image pickup apparatus performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with one another. In a first period in which a photoelectric conversion unit of at least one of the pixels stores charge, signals based on charges stored in holding units of the pixels are successively output to output lines. In a second period after the output of the signals from the pixels is terminated, the holding units of the pixels hold charge.

Abstract: A sensor has an image sensing unit including pixel blocks, and a readout unit for reading out a signal from the image sensing unit. The pixel block includes a photoelectric converter, first and second transistors, and a current source. First main electrodes of the first and second transistors are connected to a common node, and the current source is provided between the common node and a predetermined voltage. A signal readout operation includes an operation in which a voltage corresponding to charges in the photoelectric converter is supplied to a control electrode of the first transistor, and a temporally changing reference voltage is supplied to a control electrode of the second transistor. The readout unit reads out a signal from the image sensing unit via a second main electrode of the first transistor.

Abstract: A solid-state imaging device includes pixels including a photoelectric converter, a holding portion, and a transfer unit transferring charges from the photoelectric converter to the holding portion, and outputting a signal based on charges held in the holding portion, a signal line the signal is output from the pixels, a clipping unit limiting signal level so that it falls within a range having an upper limit or a lower limit determined by a clipping level, a transfer control unit controlling the transfer unit so that the charges generated during one exposure period are transferred through transfer operation performed at frequency variable but at least once, and a clipping level control unit controlling so that the clipping level is set to first clipping level when the transfer operation is performed at first frequency, and is set to second clipping level when the transfer operation is performed at second frequency.

Abstract: An imaging apparatus includes a photoelectric conversion unit of a first conductivity type, a charge holding unit of the first conductivity type, the charge holding unit being configured to hold electric charges transferred from the photoelectric conversion unit, a floating diffusion unit of the first conductivity type, the floating diffusion unit being configured to receive electric charges transferred from the charge holding unit, a punch-through prevention layer of a second conductivity type, the punch-through prevention layer being disposed between the charge holding unit and the floating diffusion unit to contact the floating diffusion unit, and a transfer assistance layer of the first conductivity type, the transfer assistance layer being disposed between the punch-through prevention layer and a surface of a semiconductor substrate.

Abstract: A photoelectric conversion apparatus includes a semiconductor substrate having one principle surface including recessed portions, and insulation bodies in the recessed portions. The semiconductor substrate includes photoelectric conversion elements each of which includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the second conductivity type which has at least a portion disposed nearer to the principle surface relative to the second semiconductor region. The second semiconductor region has a polarity of signal charge. The second semiconductor region is in contact with the first and third semiconductor regions. Signal charge paths are disposed between the recessed portions in a cross section perpendicular to the principle surface. At least one of the second and third semiconductor regions is positioned in directions of at least two of the signal charge paths.

Abstract: An image pickup apparatus performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with one another. In a first period in which a photoelectric conversion unit of at least one of the pixels stores charge, signals based on charges stored in holding units of the pixels are successively output to output lines. In a second period after the output of the signals from the pixels is terminated, the holding units of the pixels hold charge.